Hanshen Zhang

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Methods and systems to enhance process uniformity
- Patent number 11,637,002
- Issue date Apr 25, 2023
- Applied Materials, Inc.
- Saravjeet Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chamber conditioning and removal processes
- Patent number 11,328,909
- Issue date May 10, 2022
- Applied Materials, Inc.
- Hanshen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and systems to enhance process uniformity
- Patent number 11,239,061
- Issue date Feb 1, 2022
- Applied Materials, Inc.
- Saravjeet Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal recess for semiconductor structures
- Patent number 10,861,676
- Issue date Dec 8, 2020
- Applied Materials, Inc.
- Zhenjiang Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal recess for semiconductor structures
- Patent number 10,854,426
- Issue date Dec 1, 2020
- Applied Materials, Inc.
- Zhenjiang Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND high aspect ratio structure etch
- Patent number 10,692,880
- Issue date Jun 23, 2020
- Applied Materials, Inc.
- Zhenjiang Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-step fluorine radical etch of hafnium oxide
- Patent number 9,960,049
- Issue date May 1, 2018
- Applied Materials, Inc.
- Hanshen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon selective removal
- Patent number 9,881,805
- Issue date Jan 30, 2018
- Applied Materials, Inc.
- Zihui Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-selective removal
- Patent number 9,564,338
- Issue date Feb 7, 2017
- Applied Materials, Inc.
- Jingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Procedure for etch rate consistency
- Patent number 9,472,412
- Issue date Oct 18, 2016
- Applied Materials, Inc.
- Jingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Procedure for etch rate consistency
- Patent number 9,245,762
- Issue date Jan 26, 2016
- Applied Materials, Inc.
- Jingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METAL RECESS FOR SEMICONDUCTOR STRUCTURES
- Publication number 20190214229
- Publication date Jul 11, 2019
- Applied Materials, Inc.
- Zhenjiang Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL RECESS FOR SEMICONDUCTOR STRUCTURES
- Publication number 20190214230
- Publication date Jul 11, 2019
- Applied Materials, Inc.
- Zhenjiang Cui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHAMBER CONDITIONING AND REMOVAL PROCESSES
- Publication number 20190198300
- Publication date Jun 27, 2019
- Applied Materials, Inc.
- Hanshen Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D NAND HIGH ASPECT RATIO STRUCTURE ETCH
- Publication number 20180182777
- Publication date Jun 28, 2018
- Applied Materials, Inc.
- Zhenjiang CUI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-STEP FLUORINE RADICAL ETCH OF HAFNIUM OXIDE
- Publication number 20170338119
- Publication date Nov 23, 2017
- Applied Materials, Inc.
- Hanshen ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS TO ENHANCE PROCESS UNIFORMITY
- Publication number 20170229291
- Publication date Aug 10, 2017
- Applied Materials, Inc.
- Saravjeet Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON SELECTIVE REMOVAL
- Publication number 20160260616
- Publication date Sep 8, 2016
- Applied Materials, Inc.
- Zihui Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND SYSTEMS TO ENHANCE PROCESS UNIFORMITY
- Publication number 20160148821
- Publication date May 26, 2016
- Applied Materials, Inc.
- Saravjeet Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCEDURE FOR ETCH RATE CONSISTENCY
- Publication number 20160086808
- Publication date Mar 24, 2016
- Applied Materials, Inc.
- Jingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCEDURE FOR ETCH RATE CONSISTENCY
- Publication number 20150155177
- Publication date Jun 4, 2015
- Jingchun Zhang
- H01 - BASIC ELECTRIC ELEMENTS

Hanshen Zhang

Person

Patents Grantslast 30 patents

Methods and systems to enhance process uniformity

Chamber conditioning and removal processes

Methods and systems to enhance process uniformity

Metal recess for semiconductor structures

Metal recess for semiconductor structures

3D NAND high aspect ratio structure etch

Two-step fluorine radical etch of hafnium oxide

Silicon selective removal

Silicon-selective removal

Procedure for etch rate consistency

Procedure for etch rate consistency

Patents Applicationslast 30 patents

METAL RECESS FOR SEMICONDUCTOR STRUCTURES

METAL RECESS FOR SEMICONDUCTOR STRUCTURES

CHAMBER CONDITIONING AND REMOVAL PROCESSES

3D NAND HIGH ASPECT RATIO STRUCTURE ETCH

TWO-STEP FLUORINE RADICAL ETCH OF HAFNIUM OXIDE

METHODS AND SYSTEMS TO ENHANCE PROCESS UNIFORMITY

SILICON SELECTIVE REMOVAL

METHODS AND SYSTEMS TO ENHANCE PROCESS UNIFORMITY

PROCEDURE FOR ETCH RATE CONSISTENCY

PROCEDURE FOR ETCH RATE CONSISTENCY