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Kaohsiung City, TW
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Patents Grants
last 30 patents
Information
Patent Grant
Method for fabricating fin structure for fin field effect transistor
Patent number
11,862,727
Issue date
Jan 2, 2024
United Microelectronics Corp.
Hao Che Feng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Fin structure for fin field effect transistor and method for fabric...
Patent number
11,581,438
Issue date
Feb 14, 2023
United Microelectronics Corp.
Hao Che Feng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for fabricating semiconductor device
Patent number
11,462,441
Issue date
Oct 4, 2022
United Microelectronics Corp.
Shih-Wei Su
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
METHOD FOR FABRICATING FIN STRUCTURE FOR FIN FIELD EFFECT TRANSISTOR
Publication number
20230135072
Publication date
May 4, 2023
United Microelectronics Corp.
Hao Che Feng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Publication number
20220189770
Publication date
Jun 16, 2022
UNITED MICROELECTRONICS CORP.
Shih-Wei Su
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FIN STRUCTURE FOR FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FABRIC...
Publication number
20220052199
Publication date
Feb 17, 2022
United Microelectronics Corp.
Hao Che Feng
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR STRUCTURE HAVING METAL GATE AND FORMING METHOD THEREOF
Publication number
20190371916
Publication date
Dec 5, 2019
UNITED MICROELECTRONICS CORP.
Jing-Yi Lin
H01 - BASIC ELECTRIC ELEMENTS