HAO FENG

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Zhongshan city, CN

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Patents Grantslast 30 patents

Information Patent Grant
Trench gate silicon carbide MOSFET device and fabrication method th...
- Patent number 12,237,410
- Issue date Feb 25, 2025
- JSAB TECHNOLOGIES (SHENZHEN) LTD.
- Yong Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device and manufacturing method thereof
- Patent number 11,967,631
- Issue date Apr 23, 2024
- JSAB TECHNOLOGIES (SHENZHEN) LTD.
- Hao Feng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated gate bipolar transistor device and method for manufacturi...
- Patent number 11,081,575
- Issue date Aug 3, 2021
- ZHONG SHAN HONSON ELECTRONIC TECHNOLOGIES LIMITED
- Johnny Kin On Sin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREOF
- Publication number 20230343827
- Publication date Oct 26, 2023
- JSAB Technologies (Shenzhen) Ltd.
- Yong LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRON EXTRACTION TYPE FREE-WHEELING DIODE DEVICE AND PREPARATION...
- Publication number 20230290890
- Publication date Sep 14, 2023
- JSAB Technologies (Shenzhen) Ltd.
- Hao FENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR DEVICE AND METHOD FOR MANUFACTURI...
- Publication number 20200212208
- Publication date Jul 2, 2020
- ZHONG SHAN HONSON ELECTRONIC TECHNOLOGIES LIMITED
- Johnny Kin On SIN
- H01 - BASIC ELECTRIC ELEMENTS