Haohao YANG

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Staircase structure for memory device
- Patent number 12,137,558
- Issue date Nov 5, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 12,010,838
- Issue date Jun 11, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device without gate line slits and method...
- Patent number 11,963,356
- Issue date Apr 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
Information Patent Grant
Method of fabrication thereof a multi-level vertical memory device...
- Patent number 11,805,643
- Issue date Oct 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
Information Patent Grant
Three-dimensional memory device without gate line slits and method...
- Patent number 11,765,897
- Issue date Sep 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,737,263
- Issue date Aug 22, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with support structures in gate lin...
- Patent number 11,716,850
- Issue date Aug 1, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
Information Patent Grant
Multi-level vertical memory device including inter-level channel co...
- Patent number 11,502,094
- Issue date Nov 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving channel hole uniformity of a three-dimensional...
- Patent number 11,329,061
- Issue date May 10, 2022
- Yangtze Memory Technologies Co., Ltd.
- Li Hong Xiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device without gate line slits and method...
- Patent number 11,251,195
- Issue date Feb 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming three-dimensional memory device with support st...
- Patent number 11,183,512
- Issue date Nov 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Staircase structure for memory device
- Patent number 11,145,666
- Issue date Oct 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D NAND memory device and method of forming the same
- Patent number 11,145,667
- Issue date Oct 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with support structures in gate lin...
- Patent number 11,114,458
- Issue date Sep 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with support structures in slit str...
- Patent number 11,094,712
- Issue date Aug 17, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inter-deck plug in three-dimensional memory device and method for f...
- Patent number 10,892,280
- Issue date Jan 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Qianbin Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 10,892,274
- Issue date Jan 12, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yushi Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Inter-deck plug in three-dimensional memory device and method for f...
- Patent number 10,741,578
- Issue date Aug 11, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qianbin Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor plug protected by protective dielectric layer in thre...
- Patent number 10,714,493
- Issue date Jul 14, 2020
- Yangtze Memory Technologies Co., Ltd.
- Haohao Yang
- G11 - INFORMATION STORAGE
Information Patent Grant
Staircase structure for memory device
- Patent number 10,680,003
- Issue date Jun 9, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of semiconductor device fabrication
- Patent number 10,665,500
- Issue date May 26, 2020
- Yangtze Memory Technologies Co., Ltd.
- Sha Sha Liu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20250031366
- Publication date Jan 23, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20230337423
- Publication date Oct 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...
- Publication number 20230292511
- Publication date Sep 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230084008
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20230083030
- Publication date Mar 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...
- Publication number 20220115402
- Publication date Apr 14, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20210398999
- Publication date Dec 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20210391347
- Publication date Dec 16, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...
- Publication number 20210167086
- Publication date Jun 3, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Devices and Fabricating Methods Thereof
- Publication number 20210118905
- Publication date Apr 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Yushi HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...
- Publication number 20210104549
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT ST...
- Publication number 20200395373
- Publication date Dec 17, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...
- Publication number 20200395375
- Publication date Dec 17, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN SLIT STR...
- Publication number 20200395374
- Publication date Dec 17, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...
- Publication number 20200395376
- Publication date Dec 17, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTER-DECK PLUG IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR F...
- Publication number 20200335515
- Publication date Oct 22, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qianbin Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20200295019
- Publication date Sep 17, 2020
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF SEMICONDUCTOR DEVICE FABRICATION
- Publication number 20200185270
- Publication date Jun 11, 2020
- Yangtze Memory Technologies Co., Ltd.
- Sha Sha Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTER-DECK PLUG IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR F...
- Publication number 20200111807
- Publication date Apr 9, 2020
- Yangtze Memory Technologies Co., Ltd.
- Qianbin Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF
- Publication number 20200105778
- Publication date Apr 2, 2020
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR PLUG PROTECTED BY PROTECTIVE DIELECTRIC LAYER IN THRE...
- Publication number 20200105781
- Publication date Apr 2, 2020
- Yangtze Memory Technologies Co., Ltd.
- Haohao Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20200091166
- Publication date Mar 19, 2020
- Yangtze Memory Technologies Co., Ltd.
- Ruo Fang ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Three-Dimensional Memory Devices and Fabricating Methods Thereof
- Publication number 20190139982
- Publication date May 9, 2019
- Yangtze Memory Technologies Co., Ltd.
- Yushi HU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WORD LINE CONTACT STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES AN...
- Publication number 20190096810
- Publication date Mar 28, 2019
- Yangtze Technologies Co., Ltd.
- Jifeng ZHU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAIRCASE STRUCTURE FOR MEMORY DEVICE
- Publication number 20190081070
- Publication date Mar 14, 2019
- Yangtze Memory Technologies Co., Ltd.
- Zhenyu LU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPROVE CHANNEL HOLE UNIFORMITY OF A THREE-DIMENSIONAL ME...
- Publication number 20190074290
- Publication date Mar 7, 2019
- Yangtze Memory Technologies Co., Ltd.
- Li Hong XIAO
- H01 - BASIC ELECTRIC ELEMENTS

Haohao YANG

Person

Patents Grantslast 30 patents

Staircase structure for memory device

Staircase structure for memory device

Three-dimensional memory device without gate line slits and method...

Method of fabrication thereof a multi-level vertical memory device...

Three-dimensional memory device without gate line slits and method...

3D NAND memory device and method of forming the same

Three-dimensional memory device with support structures in gate lin...

Multi-level vertical memory device including inter-level channel co...

Method for improving channel hole uniformity of a three-dimensional...

Three-dimensional memory device without gate line slits and method...

Methods for forming three-dimensional memory device with support st...

Staircase structure for memory device

3D NAND memory device and method of forming the same

Three-dimensional memory device with support structures in gate lin...

Three-dimensional memory device with support structures in slit str...

Inter-deck plug in three-dimensional memory device and method for f...

Three-dimensional memory devices and fabricating methods thereof

Inter-deck plug in three-dimensional memory device and method for f...

Semiconductor plug protected by protective dielectric layer in thre...

Staircase structure for memory device

Methods of semiconductor device fabrication

Patents Applicationslast 30 patents

STAIRCASE STRUCTURE FOR MEMORY DEVICE

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...

STAIRCASE STRUCTURE FOR MEMORY DEVICE

STAIRCASE STRUCTURE FOR MEMORY DEVICE

THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...

Three-Dimensional Memory Devices and Fabricating Methods Thereof

THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...

METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT ST...

THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...

THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN SLIT STR...

THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...

INTER-DECK PLUG IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR F...

STAIRCASE STRUCTURE FOR MEMORY DEVICE

METHODS OF SEMICONDUCTOR DEVICE FABRICATION

INTER-DECK PLUG IN THREE-DIMENSIONAL MEMORY DEVICE AND METHOD FOR F...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION THEREOF

SEMICONDUCTOR PLUG PROTECTED BY PROTECTIVE DIELECTRIC LAYER IN THRE...

NOVEL 3D NAND MEMORY DEVICE AND METHOD OF FORMING THE SAME

Three-Dimensional Memory Devices and Fabricating Methods Thereof

WORD LINE CONTACT STRUCTURE FOR THREE-DIMENSIONAL MEMORY DEVICES AN...

STAIRCASE STRUCTURE FOR MEMORY DEVICE

METHOD TO IMPROVE CHANNEL HOLE UNIFORMITY OF A THREE-DIMENSIONAL ME...