Haoren Zhuang

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of etching ferroelectric devices
- Patent number 7,098,142
- Issue date Aug 29, 2006
- Infineon Technologies AG
- Ulrich Egger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device for inhibiting hydrogen damage in ferroelectric capacitor de...
- Patent number 7,071,506
- Issue date Jul 4, 2006
- Infineon Technologies AG
- Bum-Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hardmask with high selectivity for Ir barriers for ferroelectric ca...
- Patent number 7,045,837
- Issue date May 16, 2006
- Infineon Technologies AG
- Ulrich Egger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall structure and method of fabrication for reducing oxygen di...
- Patent number 7,042,705
- Issue date May 9, 2006
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fence-free etching of iridium barrier having a steep taper angle
- Patent number 7,015,049
- Issue date Mar 21, 2006
- Infineon Technologies AG
- Ulrich Egger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a ferroelectric capacitor that includes etchin...
- Patent number 7,001,781
- Issue date Feb 21, 2006
- Infineon Technologies AG
- Jenny Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...
- Patent number 7,001,780
- Issue date Feb 21, 2006
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a ferroelectric capacitor device
- Patent number 6,924,156
- Issue date Aug 2, 2005
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avoiding shorting in capacitors
- Patent number 6,897,501
- Issue date May 24, 2005
- Infineon Technologies Aktiengesellschaft
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of a FeRAM capacitor using a noble metal hardmask
- Patent number 6,867,053
- Issue date Mar 15, 2005
- Infineon Technologies AG
- Ulrich Egger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ferroelectric capacitor and process for its manufacture
- Patent number 6,785,119
- Issue date Aug 31, 2004
- Infineon Technologies AG
- Ulrich Egger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabrication of a ferrocapacitor
- Patent number 6,762,064
- Issue date Jul 13, 2004
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning capacitors and capacitors made thereby
- Patent number 6,734,057
- Issue date May 11, 2004
- Infineon Technologies AG
- Jenny Lian
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Device and a method for forming a ferroelectric capacitor device
- Publication number 20050067643
- Publication date Mar 31, 2005
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing a ferroelectric capacitor and a ferroelectric...
- Publication number 20050067649
- Publication date Mar 31, 2005
- Jenny Lian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Device and method for inhibiting hydrogen damage in ferroelectric c...
- Publication number 20050051819
- Publication date Mar 10, 2005
- Bum-Ki Moon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FENCE-FREE ETCHING OF IRIDIUM BARRIER HAVING A STEEP TAPER ANGLE
- Publication number 20050045937
- Publication date Mar 3, 2005
- Infineon Technologies AG
- Ulrich Egger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...
- Publication number 20050029563
- Publication date Feb 10, 2005
- Infineon Technologies AG
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF A FERAM CAPACITOR USING A NOBLE METAL HARDMASK
- Publication number 20050023582
- Publication date Feb 3, 2005
- Ulrich Egger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for fabrication of ferroelectric devices with reduced hydro...
- Publication number 20040206993
- Publication date Oct 21, 2004
- Infineon Technologies AG
- Karl Hornik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVOIDING SHORTING IN CAPACITORS
- Publication number 20040169211
- Publication date Sep 2, 2004
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED CONTAMINATION OF TOOLS IN SEMICONDUCTOR PROCESSING
- Publication number 20040171252
- Publication date Sep 2, 2004
- Haoren Zhuang
- C08 - ORGANIC MACROMOLECULAR COMPOUNDS THEIR PREPARATION OR CHEMICAL WORKING-...
Information Patent Application
Method for formation of hardmask elements during a semiconductor de...
- Publication number 20040171274
- Publication date Sep 2, 2004
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of etching ferroelectric devices
- Publication number 20040164050
- Publication date Aug 26, 2004
- Ulrich Egger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sidewall structure and method of fabrication for reducing oxygen di...
- Publication number 20040149477
- Publication date Aug 5, 2004
- Haoren Zhuang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hardmask with high selectivity for Ir barriers for ferroelectic cap...
- Publication number 20040150923
- Publication date Aug 5, 2004
- Ulrich Egger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ferroelectric capacitor and process for its manufacture
- Publication number 20040105213
- Publication date Jun 3, 2004
- Ulrich Egger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING CAPACITORS AND CAPACITORS MADE THEREBY
- Publication number 20040063278
- Publication date Apr 1, 2004
- Jenny Lian
- H01 - BASIC ELECTRIC ELEMENTS

Haoren Zhuang

Person

Patents Grantslast 30 patents

Method of etching ferroelectric devices

Device for inhibiting hydrogen damage in ferroelectric capacitor de...

Hardmask with high selectivity for Ir barriers for ferroelectric ca...

Sidewall structure and method of fabrication for reducing oxygen di...

Fence-free etching of iridium barrier having a steep taper angle

Method for producing a ferroelectric capacitor that includes etchin...

Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...

Method for forming a ferroelectric capacitor device

Avoiding shorting in capacitors

Fabrication of a FeRAM capacitor using a noble metal hardmask

Ferroelectric capacitor and process for its manufacture

Process for fabrication of a ferrocapacitor

Method of patterning capacitors and capacitors made thereby

Patents Applicationslast 30 patents

Device and a method for forming a ferroelectric capacitor device

Method for producing a ferroelectric capacitor and a ferroelectric...

Device and method for inhibiting hydrogen damage in ferroelectric c...

FENCE-FREE ETCHING OF IRIDIUM BARRIER HAVING A STEEP TAPER ANGLE

Method of fabrication of an FeRAM capacitor and an FeRAM capacitor...

FABRICATION OF A FERAM CAPACITOR USING A NOBLE METAL HARDMASK

Process for fabrication of ferroelectric devices with reduced hydro...

AVOIDING SHORTING IN CAPACITORS

REDUCED CONTAMINATION OF TOOLS IN SEMICONDUCTOR PROCESSING

Method for formation of hardmask elements during a semiconductor de...

Method of etching ferroelectric devices

Sidewall structure and method of fabrication for reducing oxygen di...

Hardmask with high selectivity for Ir barriers for ferroelectic cap...

Ferroelectric capacitor and process for its manufacture

METHOD OF PATTERNING CAPACITORS AND CAPACITORS MADE THEREBY