Haowen Bu

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
IC with 3D metal-insulator-metal capacitor
- Patent number 11,710,764
- Issue date Jul 25, 2023
- Texas Instruments Incorporated
- Poornika Fernandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precision capacitor
- Patent number 11,670,671
- Issue date Jun 6, 2023
- Texas Instruments Incorporated
- Poornika Fernandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precision capacitor
- Patent number 11,569,342
- Issue date Jan 31, 2023
- Texas Instruments Incorporated
- Poornika Fernandes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Precision capacitor
- Patent number 10,964,778
- Issue date Mar 30, 2021
- Texas Instruments Incorporated
- Poornika Fernandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Precision capacitor
- Patent number 10,644,098
- Issue date May 5, 2020
- Texas Instruments Incorporated
- Poornika Fernandes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Capacitor with improved voltage coefficients
- Patent number 10,157,915
- Issue date Dec 18, 2018
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 10,068,771
- Issue date Sep 4, 2018
- Texas Instruments Incorporated
- Malcolm J. Bevan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,892,927
- Issue date Feb 13, 2018
- Texas Instruments Incorporated
- Malcolm J. Bevan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,779,946
- Issue date Oct 3, 2017
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process to enable ferroelectric layers on large area substrates
- Patent number 9,583,336
- Issue date Feb 28, 2017
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,576,804
- Issue date Feb 21, 2017
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,396,951
- Issue date Jul 19, 2016
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,368,355
- Issue date Jun 14, 2016
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,337,046
- Issue date May 10, 2016
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,337,044
- Issue date May 10, 2016
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Adhesion of ferroelectric material to underlying conductive capacit...
- Patent number 9,305,998
- Issue date Apr 5, 2016
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 9,177,806
- Issue date Nov 3, 2015
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-step deposition of ferroelectric dielectric material
- Patent number 8,962,350
- Issue date Feb 24, 2015
- Texas Instruments Incorporated
- Bhaskar Srinivasan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Hydrogen-blocking film for ferroelectric capacitors
- Patent number 8,822,236
- Issue date Sep 2, 2014
- Texas Instruments Incorporated
- Bo-Yang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance CMOS transistors using PMD liner stress
- Patent number 8,809,141
- Issue date Aug 19, 2014
- Texas Instruments Incorporated
- Haowen Bu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Nickel silicide formation for semiconductor components
- Patent number 8,546,259
- Issue date Oct 1, 2013
- Texas Instruments Incorporated
- Juanita DeLoach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ carbon doped e-SiGeCB stack for MOS transistor
- Patent number 8,471,307
- Issue date Jun 25, 2013
- Texas Instruments Incorporated
- Rajesh B. Khamankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminated stress overlayer using In-situ multiple plasma treatments...
- Patent number 8,114,784
- Issue date Feb 14, 2012
- Texas Instruments Incorporated
- Haowen Bu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Stress memorization dielectric optimized for NMOS and PMOS
- Patent number 8,101,476
- Issue date Jan 24, 2012
- Texas Instruments Incorporated
- Kanan Garg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen based implants for defect reduction in strained silicon
- Patent number 8,084,312
- Issue date Dec 27, 2011
- Texas Instruments Incorporated
- Srinivasan Chakravarthi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PMD liner nitride films and fabrication methods for improved NMOS p...
- Patent number 8,084,787
- Issue date Dec 27, 2011
- Texas Instruments Incorporated
- Haowen Bu
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Capacitor formed on a recrystallized polysilicon layer
- Patent number 8,053,296
- Issue date Nov 8, 2011
- Texas Instruments Incorporated
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Systems and methods that selectively modify liner induced stress
- Patent number 7,939,400
- Issue date May 10, 2011
- Texas Instruments Incorporated
- Ting Tsui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methodology of improving the manufacturability of laser anneal
- Patent number 7,932,139
- Issue date Apr 26, 2011
- Texas Instruments Incorporated
- Haowen Bu
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
System and method for mitigating oxide growth in a gate dielectric
- Patent number 7,906,441
- Issue date Mar 15, 2011
- Texas Instruments Incorporated
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED CIRCUIT DEVICE WITH FERROELECTRIC CAPACITOR
- Publication number 20240349510
- Publication date Oct 17, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION STRUCTURE WITH NITRIDE PULLBACK BY IMPLANT...
- Publication number 20240006230
- Publication date Jan 4, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam NANDAKUMAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEME TO BUILD RESISTOR, CAPACITOR, EFUSE USING SILICO...
- Publication number 20220375856
- Publication date Nov 24, 2022
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Precision Capacitor
- Publication number 20210202688
- Publication date Jul 1, 2021
- TEXAS INSTRUMENTS INCORPORATED
- Poornika Fernandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Precision Capacitor
- Publication number 20200219969
- Publication date Jul 9, 2020
- TEXAS INSTRUMENTS INCORPORATED
- Poornika Fernandes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IC WITH 3D METAL-INSULATOR-METAL CAPACITOR
- Publication number 20200006471
- Publication date Jan 2, 2020
- TEXAS INSTRUMENTS INCORPORATED
- POORNIKA FERNANDES
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISION CAPACITOR
- Publication number 20190259826
- Publication date Aug 22, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Poornika Fernandes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PRECISION CAPACITOR
- Publication number 20190259827
- Publication date Aug 22, 2019
- TEXAS INSTRUMENTS INCORPORATED
- Poornika Fernandes
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC
- Publication number 20180130662
- Publication date May 10, 2018
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC
- Publication number 20170170022
- Publication date Jun 15, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC
- Publication number 20170133228
- Publication date May 11, 2017
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC
- Publication number 20160300722
- Publication date Oct 13, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Mitigating Oxide Growth in a Gate Dielectric
- Publication number 20160155641
- Publication date Jun 2, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Mitigating Oxide Growth in a Gate Dielectric
- Publication number 20160013061
- Publication date Jan 14, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Mitigating Oxide Growth in a Gate Dielectric
- Publication number 20160013082
- Publication date Jan 14, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Mitigating Oxide Growth in a Gate Dielectric
- Publication number 20160013083
- Publication date Jan 14, 2016
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Multi-Step Deposition of Ferroelectric Dielectric Material
- Publication number 20140225226
- Publication date Aug 14, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Adhesion of Ferroelectric Material to Underlying Conductive Capacit...
- Publication number 20140227805
- Publication date Aug 14, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Bhaskar Srinivasan
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
HYDROGEN-BLOCKING FILM FOR FERROELECTRIC CAPACITORS
- Publication number 20130309783
- Publication date Nov 21, 2013
- Bo-Yang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Hydrogen-Blocking Film for Ferroelectric Capacitors
- Publication number 20130056811
- Publication date Mar 7, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Bo-Yang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for Mitigating Oxide Growth in a Gate Dielectric
- Publication number 20110120374
- Publication date May 26, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Malcolm J. Bevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laminated Stress Overlayer Using In-SITU Multiple Plasma Treatments...
- Publication number 20110027953
- Publication date Feb 3, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Haowen Bu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
STRESS MEMORIZATION DIELECTRIC OPTIMIZED FOR NMOS AND PMOS
- Publication number 20100210081
- Publication date Aug 19, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Kanan GARG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR FORMED ON A RECRYSTALLIZED POLYSILICON LAYER
- Publication number 20100159665
- Publication date Jun 24, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen Based Implants for Defect Reduction in Strained Silicon
- Publication number 20100120215
- Publication date May 13, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Srinivasan CHAKRAVARTHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORDER REGION DEFECT REDUCTION IN HYBRID ORIENTATION TECHNOLOGY (HO...
- Publication number 20100032727
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IC FORMED WITH DENSIFIED CHEMICAL OXIDE LAYER
- Publication number 20100032813
- Publication date Feb 11, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Deborah J. Riley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN-SITU CARBON DOPED e-SiGeCB STACK FOR MOS TRANSISTOR
- Publication number 20090309140
- Publication date Dec 17, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Rajesh B. Khamankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods, Systems and Structures for Forming Semiconductor Structure...
- Publication number 20090224296
- Publication date Sep 10, 2009
- TEXAS INSTRUMENTS INCORPORATED
- PR Chidambaram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANNEALING METHOD FOR SIGE PROCESS
- Publication number 20090170256
- Publication date Jul 2, 2009
- TEXAS INSTRUMENTS INCOPORATED
- Srinivasan Chakravarthi
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

IC with 3D metal-insulator-metal capacitor

Precision capacitor

Precision capacitor

Precision capacitor

Precision capacitor

Capacitor with improved voltage coefficients

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

Process to enable ferroelectric layers on large area substrates

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

System and method for mitigating oxide growth in a gate dielectric

Adhesion of ferroelectric material to underlying conductive capacit...

System and method for mitigating oxide growth in a gate dielectric

Multi-step deposition of ferroelectric dielectric material

Hydrogen-blocking film for ferroelectric capacitors

High performance CMOS transistors using PMD liner stress

Nickel silicide formation for semiconductor components

In-situ carbon doped e-SiGeCB stack for MOS transistor

Laminated stress overlayer using In-situ multiple plasma treatments...

Stress memorization dielectric optimized for NMOS and PMOS

Nitrogen based implants for defect reduction in strained silicon

PMD liner nitride films and fabrication methods for improved NMOS p...

Capacitor formed on a recrystallized polysilicon layer

Systems and methods that selectively modify liner induced stress

Methodology of improving the manufacturability of laser anneal

System and method for mitigating oxide growth in a gate dielectric

Patents Applicationslast 30 patents

INTEGRATED CIRCUIT DEVICE WITH FERROELECTRIC CAPACITOR

SHALLOW TRENCH ISOLATION STRUCTURE WITH NITRIDE PULLBACK BY IMPLANT...

INTEGRATION SCHEME TO BUILD RESISTOR, CAPACITOR, EFUSE USING SILICO...

Precision Capacitor

Precision Capacitor

IC WITH 3D METAL-INSULATOR-METAL CAPACITOR

PRECISION CAPACITOR

PRECISION CAPACITOR

SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC

SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC

SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC

SYSTEM AND METHOD FOR MITIGATING OXIDE GROWTH IN A GATE DIELECTRIC

System and Method for Mitigating Oxide Growth in a Gate Dielectric

System and Method for Mitigating Oxide Growth in a Gate Dielectric

System and Method for Mitigating Oxide Growth in a Gate Dielectric

System and Method for Mitigating Oxide Growth in a Gate Dielectric

Multi-Step Deposition of Ferroelectric Dielectric Material

Adhesion of Ferroelectric Material to Underlying Conductive Capacit...

HYDROGEN-BLOCKING FILM FOR FERROELECTRIC CAPACITORS

Hydrogen-Blocking Film for Ferroelectric Capacitors

System and Method for Mitigating Oxide Growth in a Gate Dielectric

Laminated Stress Overlayer Using In-SITU Multiple Plasma Treatments...

STRESS MEMORIZATION DIELECTRIC OPTIMIZED FOR NMOS AND PMOS

CAPACITOR FORMED ON A RECRYSTALLIZED POLYSILICON LAYER

Nitrogen Based Implants for Defect Reduction in Strained Silicon

BORDER REGION DEFECT REDUCTION IN HYBRID ORIENTATION TECHNOLOGY (HO...

IC FORMED WITH DENSIFIED CHEMICAL OXIDE LAYER

IN-SITU CARBON DOPED e-SiGeCB STACK FOR MOS TRANSISTOR

Methods, Systems and Structures for Forming Semiconductor Structure...

ANNEALING METHOD FOR SIGE PROCESS