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Harold W. KENNEL
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Portland, OR, US
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Patents Grants
last 30 patents
Information
Patent Grant
Source or drain structures for germanium N-channel devices
Patent number
11,973,143
Issue date
Apr 30, 2024
Intel Corporation
Ryan Keech
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Ferroelectric gate stack for band-to-band tunneling reduction
Patent number
11,929,435
Issue date
Mar 12, 2024
Intel Corporation
Gilbert Dewey
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Integrated circuit structures having germanium-based channels
Patent number
11,923,421
Issue date
Mar 5, 2024
Intel Corporation
Siddharth Chouksey
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Amorphization and regrowth of source-drain regions from the bottom-...
Patent number
11,798,991
Issue date
Oct 24, 2023
Intel Corporation
Aaron Lilak
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Subfin leakage suppression using fixed charge
Patent number
11,784,239
Issue date
Oct 10, 2023
Intel Corporation
Sean T. Ma
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Indium-containing fin of a transistor device with an indium-rich core
Patent number
11,764,275
Issue date
Sep 19, 2023
Intel Corporation
Chandra S. Mohapatra
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Source-channel junction for III-V metal-oxide-semiconductor field e...
Patent number
11,756,998
Issue date
Sep 12, 2023
Intel Corporation
Cheng-Ying Huang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Channel layer formation for III-V metal-oxide-semiconductor field e...
Patent number
11,695,081
Issue date
Jul 4, 2023
Intel Corporation
Sean Ma
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Contact stacks to reduce hydrogen in semiconductor devices
Patent number
11,637,185
Issue date
Apr 25, 2023
Intel Corporation
Justin Weber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating CMOS FinFETs by selectively etching a straine...
Patent number
11,581,406
Issue date
Feb 14, 2023
Daedalus Prime LLC
Stephen M. Cea
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Transistors with high density channel semiconductor over dielectric...
Patent number
11,557,658
Issue date
Jan 17, 2023
Intel Corporation
Gilbert Dewey
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Contacts to n-type transistors with X-valley layer over L-valley ch...
Patent number
11,515,420
Issue date
Nov 29, 2022
Intel Corporation
Dax M. Crum
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Channel layer formation for III-V metal-oxide-semiconductor field e...
Patent number
11,508,577
Issue date
Nov 22, 2022
Intel Corporation
Gilbert Dewey
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Aluminum indium phosphide subfin germanium channel transistors
Patent number
11,476,338
Issue date
Oct 18, 2022
Intel Corporation
Matthew V. Metz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Ferroelectric gate stack for band-to-band tunneling reduction
Patent number
11,469,323
Issue date
Oct 11, 2022
Intel Corporation
Gilbert Dewey
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Stacked thin film transistors
Patent number
11,462,568
Issue date
Oct 4, 2022
Intel Corporation
Aaron Lilak
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Field effect transistors with wide bandgap materials
Patent number
11,444,159
Issue date
Sep 13, 2022
Intel Corporation
Sean T. Ma
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Integrated circuit structures having germanium-based channels
Patent number
11,437,472
Issue date
Sep 6, 2022
Intel Corporation
Siddharth Chouksey
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor nanowire device having (111)-plane channel sidewalls
Patent number
11,398,478
Issue date
Jul 26, 2022
Intel Corporation
Cory E. Weber
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Source/drain recess etch stop layers and bottom wide-gap cap for II...
Patent number
11,367,789
Issue date
Jun 21, 2022
Intel Corporation
Cheng-Ying Huang
B82 - NANO-TECHNOLOGY
Information
Patent Grant
Source-channel junction for III-V metal-oxide-semiconductor field e...
Patent number
11,257,904
Issue date
Feb 22, 2022
Intel Corporation
Cheng-Ying Huang
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Reducing band-to-band tunneling in semiconductor devices
Patent number
11,233,148
Issue date
Jan 25, 2022
Intel Corporation
Benjamin Chu-Kung
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating a semiconductor device with strained SiGe fin...
Patent number
11,195,919
Issue date
Dec 7, 2021
Intel Corporation
Stephen M Cea
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Transistor structures having multiple threshold voltage channel mat...
Patent number
11,177,255
Issue date
Nov 16, 2021
Intel Corporation
Sean T. Ma
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Group III-V semiconductor devices having asymmetric source and drai...
Patent number
11,164,747
Issue date
Nov 2, 2021
Intel Corporation
Sean T. Ma
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Channel layer formed in an art trench
Patent number
11,164,974
Issue date
Nov 2, 2021
Intel Corporation
Willy Rachmady
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Integrated circuit with germanium-rich channel transistors includin...
Patent number
11,101,350
Issue date
Aug 24, 2021
Intel Corporation
Glenn A. Glass
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Art trench spacers to enable fin release for non-lattice matched ch...
Patent number
11,049,773
Issue date
Jun 29, 2021
Intel Corporation
Gilbert Dewey
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Gradient doping to lower leakage in low band gap material devices
Patent number
11,024,713
Issue date
Jun 1, 2021
Intel Corporation
Seung Hoon Sung
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Thin film cap to lower leakage in low band gap material devices
Patent number
10,985,263
Issue date
Apr 20, 2021
Intel Corporation
Seung Hoon Sung
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS
Publication number
20240164080
Publication date
May 16, 2024
Intel Corporation
Peng ZHENG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
Publication number
20240145549
Publication date
May 2, 2024
Intel Corporation
Siddharth CHOUKSEY
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
AMORPHIZATION AND REGROWTH OF SOURCE-DRAIN REGIONS FROM THE BOTTOM-...
Publication number
20240006489
Publication date
Jan 4, 2024
Intel Corporation
Aaron LILAK
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SIGE:GAB SOURCE OR DRAIN STRUCTURES WITH LOW RESISTIVITY
Publication number
20230420456
Publication date
Dec 28, 2023
Intel Corporation
Debaleena NANDI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...
Publication number
20230170388
Publication date
Jun 1, 2023
Daedalus Prime LLC
Stephen M. Cea
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SILICON RICH CAPPING LAYER PRE-AMORPHIZED WITH GERMANIUM AND BORON...
Publication number
20230101725
Publication date
Mar 30, 2023
Intel Corporation
Debaleena NANDI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
FERROELECTRIC GATE STACK FOR BAND-TO-BAND TUNNELING REDUCTION
Publication number
20230006065
Publication date
Jan 5, 2023
Intel Corporation
Gilbert Dewey
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
LOW GERMANIUM, HIGH BORON SILICON RICH CAPPING LAYER FOR PMOS CONTA...
Publication number
20220416050
Publication date
Dec 29, 2022
Intel Corporation
Debaleena NANDI
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
CO-DEPOSITION OF TITANIUM AND SILICON FOR IMPROVED SILICON GERMANIU...
Publication number
20220416032
Publication date
Dec 29, 2022
Intel Corporation
Debaleena Nandi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
INTEGRATED CIRCUIT STRUCTURES HAVING GERMANIUM-BASED CHANNELS
Publication number
20220406895
Publication date
Dec 22, 2022
Intel Corporation
Siddharth CHOUKSEY
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SEMICONDUCTOR NANOWIRE DEVICE HAVING (111)-PLANE CHANNEL SIDEWALLS
Publication number
20220310600
Publication date
Sep 29, 2022
Intel Corporation
Cory E. WEBER
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SOURCE & DRAIN DOPANT DIFFUSION BARRIERS FOR N-TYPE GERMANIUM TRANS...
Publication number
20220199402
Publication date
Jun 23, 2022
Intel Corporation
Koustav Ganguly
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SOURCE-CHANNEL JUNCTION FOR III-V METAL-OXIDE-SEMICONDUCTOR FIELD E...
Publication number
20220140076
Publication date
May 5, 2022
Intel Corporation
Cheng-Ying HUANG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES
Publication number
20220109072
Publication date
Apr 7, 2022
Intel Corporation
Benjamin CHU-KUNG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
CMOS FINFET DEVICE HAVING STRAINED SIGE FINS AND A STRAINED SI CLAD...
Publication number
20220059656
Publication date
Feb 24, 2022
Intel Corporation
Stephen M. Cea
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
CHANNEL DEPOPULATION FOR FORKSHEET TRANSISTORS
Publication number
20210408009
Publication date
Dec 30, 2021
Peng ZHENG
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
DOUBLE-SIDED INTEGRATED CIRCUIT TRANSISTOR STRUCTURES WITH DEPOPULA...
Publication number
20210398977
Publication date
Dec 23, 2021
Intel Corporation
Varun Mishra
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
IMPROVED CONTACTS TO N-TYPE TRANSISTORS WITH L-VALLEY CHANNELS
Publication number
20200411690
Publication date
Dec 31, 2020
Intel Corporation
Dax M. Crum
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
AMORPHIZATION AND REGROWTH OF SOURCE-DRAIN REGIONS FROM THE BOTTOM-...
Publication number
20200411644
Publication date
Dec 31, 2020
Intel Corporation
Aaron LILAK
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED NMOS TRANSISTORS
Publication number
20200381549
Publication date
Dec 3, 2020
Intel Corporation
STEPHEN M. CEA
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ALUMINUM INDIUM PHOSPHIDE SUBFIN GERMANIUM CHANNEL TRANSISTORS
Publication number
20200328278
Publication date
Oct 15, 2020
Intel Corporation
Matthew V. Metz
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
HIGH-MOBILITY FIELD EFFECT TRANSISTORS WITH WIDE BANDGAP FIN CLADDING
Publication number
20200321439
Publication date
Oct 8, 2020
Intel Corporation
Sean T. Ma
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
SOURCE OR DRAIN STRUCTURES FOR GERMANIUM N-CHANNEL DEVICES
Publication number
20200313001
Publication date
Oct 1, 2020
Intel Corporation
Ryan KEECH
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TRANSISTORS WITH HIGH DENSITY CHANNEL SEMICONDUCTOR OVER DIELECTRIC...
Publication number
20200287024
Publication date
Sep 10, 2020
Intel Corporation
Gilbert Dewey
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
TRANSISTOR STRUCTURES HAVING MULTIPLE THRESHOLD VOLTAGE CHANNEL MAT...
Publication number
20200279845
Publication date
Sep 3, 2020
Intel Corporation
Sean T. Ma
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
REDUCING OFF-STATE LEAKAGE IN SEMICONDUCTOR DEVICES
Publication number
20200279910
Publication date
Sep 3, 2020
Intel Corporation
Dipanjan Basu
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
GERMANIUM-RICH CHANNEL TRANSISTORS INCLUDING ONE OR MORE DOPANT DIF...
Publication number
20200273952
Publication date
Aug 27, 2020
Intel Corporation
Glenn A. GLASS
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
REDUCING BAND-TO-BAND TUNNELING IN SEMICONDUCTOR DEVICES
Publication number
20200266296
Publication date
Aug 20, 2020
Intel Corporation
Benjamin Chu-Kung
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
IMPROVED CHANNEL LAYER FORMED IN AN ART TRENCH
Publication number
20200220017
Publication date
Jul 9, 2020
Intel Corporation
Willy Rachmady
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
ALUMINUM INDIUM PHOSPHIDE SUBFIN GERMANIUM CHANNEL TRANSISTORS
Publication number
20200212186
Publication date
Jul 2, 2020
Intel Corporation
Matthew V. Metz
H01 - BASIC ELECTRIC ELEMENTS