Hartmut Ruelke

Person

Wilschdorf, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Spacer for a gate electrode having tensile stress and a method of f...
- Patent number 8,847,205
- Issue date Sep 30, 2014
- GLOBALFOUNDRIES Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Technique for forming a dielectric interlayer above a structure inc...
- Patent number 8,772,178
- Issue date Jul 8, 2014
- GLOBALFOUNDRIES Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compressive stress transfer in an interlayer dielectric of a semico...
- Patent number 8,759,232
- Issue date Jun 24, 2014
- GLOBALFOUNDRIES Inc.
- Joerg Hohage
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Increased density of low-K dielectric materials in semiconductor de...
- Patent number 8,741,787
- Issue date Jun 3, 2014
- GLOBALFOUNDRIES Inc.
- Ulrich Mayer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Increased stability of a complex material stack in a semiconductor...
- Patent number 8,609,555
- Issue date Dec 17, 2013
- GLOBALFOUNDRIES Inc.
- Christof Streck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-insulating stressed material layers in a contact level of semic...
- Patent number 8,450,172
- Issue date May 28, 2013
- GLOBALFOUNDRIES Inc.
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced adhesion of PECVD carbon on dielectric materials by provid...
- Patent number 8,415,257
- Issue date Apr 9, 2013
- GLOBALFOUNDRIES Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress engineering in a contact level of semiconductor devices by s...
- Patent number 8,338,284
- Issue date Dec 25, 2012
- GLOBALFOUNDRIES Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a dielectric cap layer for a copper metallization...
- Patent number 8,211,795
- Issue date Jul 3, 2012
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of improving the wafer-to-wafer thickness uniformity of sili...
- Patent number 8,084,088
- Issue date Dec 27, 2011
- GLOBALFOUNDRIES Inc.
- Katja Huy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Particle reduction in PECVD processes for depositing low-k material...
- Patent number 7,998,882
- Issue date Aug 16, 2011
- GLOBALFOUNDRIES Inc.
- Ulrich Mayer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a TEOS cap layer at low temperature and reduced d...
- Patent number 7,807,233
- Issue date Oct 5, 2010
- GLOBALFOUNDRIES Inc.
- Hartmut Ruelke
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a field effect transistor comprising a stressed c...
- Patent number 7,381,602
- Issue date Jun 3, 2008
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dielectric barrier layer for a copper metallization layer having a...
- Patent number 7,381,660
- Issue date Jun 3, 2008
- Advanced Micro Devices, Inc.
- Larry Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a field effect transistor having a stressed chann...
- Patent number 7,341,903
- Issue date Mar 11, 2008
- Advanced Micro Devices, Inc.
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen-free ARC layer and a method of manufacturing the same
- Patent number 7,326,646
- Issue date Feb 5, 2008
- Advanced Micro Devices, Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen-free ARC/capping layer and method of manufacturing the same
- Patent number 7,314,824
- Issue date Jan 1, 2008
- Advanced Micro Devices, Inc.
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a cap layer having anti-reflective characteristic...
- Patent number 7,030,044
- Issue date Apr 18, 2006
- Advanced Micro Devices, Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen-enriched low-k barrier layer for a copper metallization layer
- Patent number 7,022,602
- Issue date Apr 4, 2006
- Advanced Micro Devices, Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper damascene with low-k capping layer and improved electromigra...
- Patent number 6,989,601
- Issue date Jan 24, 2006
- Advanced Micro Devices, Inc.
- Minh van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-k dielectric layer stack including an etch indicator layer for...
- Patent number 6,927,161
- Issue date Aug 9, 2005
- Advanced Micro Devices, Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Barrier layer for a copper metallization layer including a low-k di...
- Patent number 6,893,956
- Issue date May 17, 2005
- Advanced Micro Devices, Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper damascene with low-k capping layer and improved electromigra...
- Patent number 6,797,652
- Issue date Sep 28, 2004
- Advanced Micro Devices, Inc.
- Minh van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a substrate contact in a field effect transistor...
- Patent number 6,720,242
- Issue date Apr 13, 2004
- Advanced Micro Devices, Inc.
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming capped copper interconnects with improved electr...
- Patent number 6,599,827
- Issue date Jul 29, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming copper interconnect capping layers with improved...
- Patent number 6,596,631
- Issue date Jul 22, 2003
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface treatment and capping layer process for producing a copper...
- Patent number 6,569,768
- Issue date May 27, 2003
- Advanced Micro Devices, Inc.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming capped copper interconnects with reduced hillock...
- Patent number 6,506,677
- Issue date Jan 14, 2003
- Advanced Micro Devices, Inc.
- Steven C. Avanzino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming silicon oxynitride films
- Patent number 6,372,668
- Issue date Apr 16, 2002
- Advanced Micro Devices, Inc.
- Sey-Ping Sun
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming capped copper interconnects with reduced hillocks
- Patent number 6,368,948
- Issue date Apr 9, 2002
- Advanced Micro Devices, Inc.
- Minh Van Ngo
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
COMPRESSIVE STRESS TRANSFER IN AN INTERLAYER DIELECTRIC OF A SEMICO...
- Publication number 20140048912
- Publication date Feb 20, 2014
- GLOBALFOUNDRIES INC.
- Joerg Hohage
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SPACER FOR A GATE ELECTRODE HAVING TENSILE STRESS AND A METHOD OF F...
- Publication number 20140011302
- Publication date Jan 9, 2014
- GLOBALFOUNDRIES INC.
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Increased Stability of a Complex Material Stack in a Semiconductor...
- Publication number 20120025392
- Publication date Feb 2, 2012
- GLOBALFOUNDRIES INC.
- Christof Streck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED ADHESION OF PECVD CARBON ON DIELECTRIC MATERIALS BY PROVID...
- Publication number 20110104866
- Publication date May 5, 2011
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENGINEERING IN A CONTACT LEVEL OF SEMICONDUCTOR DEVICES BY S...
- Publication number 20110073959
- Publication date Mar 31, 2011
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASED DENSITY OF LOW-K DIELECTRIC MATERIALS IN SEMICONDUCTOR DE...
- Publication number 20110027989
- Publication date Feb 3, 2011
- Ulrich MAYER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-INSULATING STRESSED MATERIAL LAYERS IN A CONTACT LEVEL OF SEMIC...
- Publication number 20100327362
- Publication date Dec 30, 2010
- Ralf Richter
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PARTICLE REDUCTION IN PECVD PROCESSES FOR DEPOSITING LOW-K MATERIAL...
- Publication number 20100055899
- Publication date Mar 4, 2010
- Ulrich Mayer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD OF FORMING A DIELECTRIC CAP LAYER FOR A COPPER METALLIZATION...
- Publication number 20080286966
- Publication date Nov 20, 2008
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL FIELD EFFECT TRANSISTOR HAVING A CONTACT ETCH STOP LAYER...
- Publication number 20080054415
- Publication date Mar 6, 2008
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a field effect transistor having a stressed chann...
- Publication number 20060113641
- Publication date Jun 1, 2006
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a field effect transistor comprising a stressed c...
- Publication number 20060076652
- Publication date Apr 13, 2006
- Joerg Hohage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including a low-k metallization layer stack fo...
- Publication number 20060043588
- Publication date Mar 2, 2006
- Christof Streck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen-free ARC/capping layer and method of manufacturing the same
- Publication number 20060024955
- Publication date Feb 2, 2006
- Kai Frohberg
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for forming a dielectric interlayer above a structure inc...
- Publication number 20060001168
- Publication date Jan 5, 2006
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen-free ARC layer and a method of manufacturing the same
- Publication number 20050208755
- Publication date Sep 22, 2005
- Hartmut Ruelke
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Method of forming a teos cap layer at low temperature and reduced d...
- Publication number 20050048222
- Publication date Mar 3, 2005
- Hartmut Ruelke
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of improving the wafer-to-wafer thickness uniformity of sili...
- Publication number 20050026434
- Publication date Feb 3, 2005
- Katja Huy
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Nitrogen-enriched low-k barrier layer for a copper metallization layer
- Publication number 20040214430
- Publication date Oct 28, 2004
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dielectric barrier layer for a copper metallization layer having a...
- Publication number 20040152333
- Publication date Aug 5, 2004
- Larry Zhao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a cap layer having anti-reflective characteristic...
- Publication number 20040121621
- Publication date Jun 24, 2004
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Technique for reducing resist poisoning in forming a metallization...
- Publication number 20040121265
- Publication date Jun 24, 2004
- Thomas Werner
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Barrier layer for a copper metallization layer including a low k di...
- Publication number 20040084680
- Publication date May 6, 2004
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Low-k dielectric layer stack including an etch indicator layer for...
- Publication number 20040041239
- Publication date Mar 4, 2004
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Highly efficient remote clean process for process chambers in depos...
- Publication number 20030200984
- Publication date Oct 30, 2003
- Christof Streck
- B08 - CLEANING
Information Patent Application
Method of removing oxidized portions at an interface of a metal sur...
- Publication number 20030072695
- Publication date Apr 17, 2003
- Hartmut Ruelke
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor structure having a silicon oxynitride ARC layer and a...
- Publication number 20020076843
- Publication date Jun 20, 2002
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Surface treatment and capping layer process for producing a copper...
- Publication number 20020072218
- Publication date Jun 13, 2002
- Hartmut Ruelke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a substrate contact in a field effect transistor...
- Publication number 20020055244
- Publication date May 9, 2002
- Gert Burbach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming Silicon Oxynitride Films
- Publication number 20010044220
- Publication date Nov 22, 2001
- Sey-Ping Sun
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Hartmut Ruelke

Person

Patents Grantslast 30 patents

Spacer for a gate electrode having tensile stress and a method of f...

Technique for forming a dielectric interlayer above a structure inc...

Compressive stress transfer in an interlayer dielectric of a semico...

Increased density of low-K dielectric materials in semiconductor de...

Increased stability of a complex material stack in a semiconductor...

Non-insulating stressed material layers in a contact level of semic...

Enhanced adhesion of PECVD carbon on dielectric materials by provid...

Stress engineering in a contact level of semiconductor devices by s...

Method of forming a dielectric cap layer for a copper metallization...

Method of improving the wafer-to-wafer thickness uniformity of sili...

Particle reduction in PECVD processes for depositing low-k material...

Method of forming a TEOS cap layer at low temperature and reduced d...

Method of forming a field effect transistor comprising a stressed c...

Dielectric barrier layer for a copper metallization layer having a...

Method of forming a field effect transistor having a stressed chann...

Nitrogen-free ARC layer and a method of manufacturing the same

Nitrogen-free ARC/capping layer and method of manufacturing the same

Method of forming a cap layer having anti-reflective characteristic...

Nitrogen-enriched low-k barrier layer for a copper metallization layer

Copper damascene with low-k capping layer and improved electromigra...

Low-k dielectric layer stack including an etch indicator layer for...

Barrier layer for a copper metallization layer including a low-k di...

Copper damascene with low-k capping layer and improved electromigra...

Method of forming a substrate contact in a field effect transistor...

Methods of forming capped copper interconnects with improved electr...

Method of forming copper interconnect capping layers with improved...

Surface treatment and capping layer process for producing a copper...

Method of forming capped copper interconnects with reduced hillock...

Method of forming silicon oxynitride films

Method of forming capped copper interconnects with reduced hillocks

Patents Applicationslast 30 patents

COMPRESSIVE STRESS TRANSFER IN AN INTERLAYER DIELECTRIC OF A SEMICO...

SPACER FOR A GATE ELECTRODE HAVING TENSILE STRESS AND A METHOD OF F...

Increased Stability of a Complex Material Stack in a Semiconductor...

ENHANCED ADHESION OF PECVD CARBON ON DIELECTRIC MATERIALS BY PROVID...

STRESS ENGINEERING IN A CONTACT LEVEL OF SEMICONDUCTOR DEVICES BY S...

INCREASED DENSITY OF LOW-K DIELECTRIC MATERIALS IN SEMICONDUCTOR DE...

NON-INSULATING STRESSED MATERIAL LAYERS IN A CONTACT LEVEL OF SEMIC...

PARTICLE REDUCTION IN PECVD PROCESSES FOR DEPOSITING LOW-K MATERIAL...

METHOD OF FORMING A DIELECTRIC CAP LAYER FOR A COPPER METALLIZATION...

N-CHANNEL FIELD EFFECT TRANSISTOR HAVING A CONTACT ETCH STOP LAYER...

Method of forming a field effect transistor having a stressed chann...

Method of forming a field effect transistor comprising a stressed c...

Semiconductor device including a low-k metallization layer stack fo...

Nitrogen-free ARC/capping layer and method of manufacturing the same

Technique for forming a dielectric interlayer above a structure inc...

Nitrogen-free ARC layer and a method of manufacturing the same

Method of forming a teos cap layer at low temperature and reduced d...

Method of improving the wafer-to-wafer thickness uniformity of sili...

Nitrogen-enriched low-k barrier layer for a copper metallization layer

Dielectric barrier layer for a copper metallization layer having a...

Method of forming a cap layer having anti-reflective characteristic...

Technique for reducing resist poisoning in forming a metallization...

Barrier layer for a copper metallization layer including a low k di...

Low-k dielectric layer stack including an etch indicator layer for...

Highly efficient remote clean process for process chambers in depos...

Method of removing oxidized portions at an interface of a metal sur...

Semiconductor structure having a silicon oxynitride ARC layer and a...

Surface treatment and capping layer process for producing a copper...

Method of forming a substrate contact in a field effect transistor...

Method Of Forming Silicon Oxynitride Films