Haruhito Shimakura

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Patents Grantslast 30 patents

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Semi-insulating InP single crystals, semiconductor devices having s...
- Patent number 5,254,507
- Issue date Oct 19, 1993
- Nippon Mining Co., Ltd
- Haruhito Shimakura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Compound semiconductor single crystals and the method for making th...
- Patent number 5,219,632
- Issue date Jun 15, 1993
- Haruhito Shimakura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing a uniform oxide layer on a compound semicondu...
- Patent number 5,214,003
- Issue date May 25, 1993
- Nippon Mining Co., Ltd
- Haruhito Shimakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semi-insulating INP single crystals, semiconductor devices having s...
- Patent number 5,173,127
- Issue date Dec 22, 1992
- Nippon Mining Co., Ltd
- Haruhito Shimakura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of producing GaAs single crystal substrate using three stage...
- Patent number 5,137,847
- Issue date Aug 11, 1992
- Nippon Mining Co., Ltd.
- Haruhito Shimakura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing compound semiconductor single crystals and met...
- Patent number 4,929,564
- Issue date May 29, 1990
- Nippon Mining Co., Ltd
- Keiji Kainosho
- C30 - CRYSTAL GROWTH