Haruki Yokoyama

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Tokyo, JP

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Patents Grantslast 30 patents

Information Patent Grant
Avalanche photodiode
- Patent number 9,006,854
- Issue date Apr 14, 2015
- NTT Electronics Corporation
- Tadao Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 8,754,445
- Issue date Jun 17, 2014
- NTT Electronics Corporation
- Tadao Ishibashi
- G02 - OPTICS
Information Patent Grant
Avalanche photodiode
- Patent number 8,729,602
- Issue date May 20, 2014
- NTT Electronics Corporation
- Tadao Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Avalanche photodiode
- Patent number 8,575,650
- Issue date Nov 5, 2013
- NTT Electronics Corporation
- Tadao Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor
- Patent number 7,242,038
- Issue date Jul 10, 2007
- Nippon Telegraph and Telephone Corporation
- Yasuhiro Oda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20130313608
- Publication date Nov 28, 2013
- Nippon Telegraph and Telephone Corporation
- Tadao Ishibashi
- G02 - OPTICS
Information Patent Application
AVALANCHE PHOTODIODE
- Publication number 20130168793
- Publication date Jul 4, 2013
- NTT ELECTRONICS CORPORATION
- Tadao Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE PHOTODIODE
- Publication number 20130154045
- Publication date Jun 20, 2013
- Nippon Telegraph and Telephone Corporation
- Tadao Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AVALANCHE PHOTODIODE
- Publication number 20110241150
- Publication date Oct 6, 2011
- NTT Electronics Corporation
- Tadao Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor
- Publication number 20060231859
- Publication date Oct 19, 2006
- Yasuhiro Oda
- H01 - BASIC ELECTRIC ELEMENTS