Harunori Sakaguchi

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Tsuchiura-Shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor epitaxial wafer and nitride semiconductor device
- Patent number 9,293,539
- Issue date Mar 22, 2016
- SCIOCS COMPANY LIMITED
- Harunori Sakaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming CNT containing wiring material and sputtering tar...
- Patent number 7,578,909
- Issue date Aug 25, 2009
- Hitachi Cable, Ltd.
- Satoru Mano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Process for producing crystalline silicon thin film
- Patent number 6,468,841
- Issue date Oct 22, 2002
- Hitachi Cable, Ltd.
- Shinichi Muramatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Polyolefin compositions for electrical insulation
- Patent number 4,370,517
- Issue date Jan 25, 1983
- Hitachi Cable Limited
- Kenichiro Soma
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR EPITAXIAL WAFER AND NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20150194493
- Publication date Jul 9, 2015
- Hitachi Metals, Ltd.
- Harunori SAKAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming CNT containing wiring material and sputtering tar...
- Publication number 20060057742
- Publication date Mar 16, 2006
- Hitachi Cable, Ltd.
- Satoru Mano
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Process for producing crystalline silicon thin film
- Publication number 20010039103
- Publication date Nov 8, 2001
- Shinichi Muramatsu
- C30 - CRYSTAL GROWTH