Harunori Ushikawa

Person

Kofu, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Capacitor for analog circuit, and manufacturing method thereof
- Patent number 6,551,896
- Issue date Apr 22, 2003
- Tokyo Electron Limited
- Keizo Hosoda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and device for treating semiconductor with treating gas whil...
- Patent number 6,140,256
- Issue date Oct 31, 2000
- Tokyo Electron Limited
- Harunori Ushikawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Single-substrate-processing apparatus in semiconductor processing s...
- Patent number 6,007,633
- Issue date Dec 28, 1999
- Tokyo Electron Limited
- Masayuki Kitamura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Transfer apparatus, transfer method, treatment apparatus and treatm...
- Patent number 5,984,607
- Issue date Nov 16, 1999
- Tokyo Electron Limited
- Tetsu Oosawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heating device, method of manufacturing the same, and processing ap...
- Patent number 5,904,872
- Issue date May 18, 1999
- Tokyo Electron Limited
- Junichi Arami
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Heat treatment process for preventing slips in semiconductor wafers
- Patent number 5,775,889
- Issue date Jul 7, 1998
- Tokyo Electron Limited
- Junichi Kobayashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Processing apparatus
- Patent number 5,536,320
- Issue date Jul 16, 1996
- Tokyo Electron Kabushiki Kaisha
- Harunori Ushikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Treating device
- Patent number 5,378,283
- Issue date Jan 3, 1995
- Tokyo Electron Kabushiki Kaisha
- Harunori Ushikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heat treatment apparatus having a wafer boat
- Patent number 5,310,339
- Issue date May 10, 1994
- Tokyo Electron Limited
- Harunori Ushikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a phosphorus doped silicon film
- Patent number 5,225,378
- Issue date Jul 6, 1993
- Tokyo Electron Limited
- Harunori Ushikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming semiconductor film
- Patent number 5,116,784
- Issue date May 26, 1992
- Tokyo Electron Limited
- Harunori Ushikawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Capacitor for analog circuit, and manufacturing method thereof
- Publication number 20020160577
- Publication date Oct 31, 2002
- Keizo Hosoda
- H01 - BASIC ELECTRIC ELEMENTS

Harunori Ushikawa

Person

Patents Grantslast 30 patents

Capacitor for analog circuit, and manufacturing method thereof

Method and device for treating semiconductor with treating gas whil...

Single-substrate-processing apparatus in semiconductor processing s...

Transfer apparatus, transfer method, treatment apparatus and treatm...

Heating device, method of manufacturing the same, and processing ap...

Heat treatment process for preventing slips in semiconductor wafers

Processing apparatus

Treating device

Heat treatment apparatus having a wafer boat

Method of forming a phosphorus doped silicon film

Method of forming semiconductor film

Patents Applicationslast 30 patents

Capacitor for analog circuit, and manufacturing method thereof