Haruo Sunakawa

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III-V compound semiconductor crystal structure and method of...
- Patent number 6,809,351
- Issue date Oct 26, 2004
- NEC Corporation
- Masaru Kuramoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III-V compound semiconductors
- Patent number 6,555,845
- Issue date Apr 29, 2003
- NEC Corporation
- Haruo Sunakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing group III-V compound semiconductors
- Patent number 6,348,096
- Issue date Feb 19, 2002
- NEC Corporation
- Haruo Sunakawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN crystal film, a group III element nitride semiconductor wafer a...
- Patent number 6,252,261
- Issue date Jun 26, 2001
- NEC Corporation
- Akira Usui
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of crystal growth of a GaN layer over a GaAs substrate
- Patent number 6,096,130
- Issue date Aug 1, 2000
- NEC Corporation
- Akitaka Kimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth method for gallium nitride films
- Patent number 5,843,227
- Issue date Dec 1, 1998
- NEC Corporation
- Akitaka Kimura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Heterostructure III-V nitride semiconductor device including InP su...
- Patent number 5,825,053
- Issue date Oct 20, 1998
- NEC Corporation
- Akitaka Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group VI doping of III-V semiconductors during ALE
- Patent number 4,859,627
- Issue date Aug 22, 1989
- NEC Corporation
- Haruo Sunakawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping III-V compound semiconductor devices with group VI monolayer...
- Patent number 4,845,049
- Issue date Jul 4, 1989
- NEC Corporation
- Haruo Sunakawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Base substrate for crystal growth and manufacturing method of subst...
- Publication number 20030207125
- Publication date Nov 6, 2003
- NEC Corporation
- Haruo Sunakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V compound semiconductor crystal structure and method of...
- Publication number 20020168844
- Publication date Nov 14, 2002
- NEC Corporation
- Masaru Kuramoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for manufacturing group III-V compound semiconductors
- Publication number 20020066403
- Publication date Jun 6, 2002
- NEC Corporation
- Haruo Sunakawa
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing a nitrogen-based semiconductor substrate an...
- Publication number 20010026950
- Publication date Oct 4, 2001
- NEC Corporation
- Haruo Sunakawa
- H01 - BASIC ELECTRIC ELEMENTS

Haruo Sunakawa

Person

Patents Grantslast 30 patents

Group III-V compound semiconductor crystal structure and method of...

Method for manufacturing group III-V compound semiconductors

Method for manufacturing group III-V compound semiconductors

GaN crystal film, a group III element nitride semiconductor wafer a...

Method of crystal growth of a GaN layer over a GaAs substrate

Crystal growth method for gallium nitride films

Heterostructure III-V nitride semiconductor device including InP su...

Group VI doping of III-V semiconductors during ALE

Doping III-V compound semiconductor devices with group VI monolayer...

Patents Applicationslast 30 patents

Base substrate for crystal growth and manufacturing method of subst...

Group III-V compound semiconductor crystal structure and method of...

Method for manufacturing group III-V compound semiconductors

Method of manufacturing a nitrogen-based semiconductor substrate an...