Hasan Nejad

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Silicided recessed silicon
- Patent number 9,076,888
- Issue date Jul 7, 2015
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device having reduced bottom contact are...
- Patent number 8,592,797
- Issue date Nov 26, 2013
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating integrated circuitry
- Patent number 8,426,305
- Issue date Apr 23, 2013
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device having reduced bottom contact are...
- Patent number 8,354,661
- Issue date Jan 15, 2013
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Variable resistance memory device having reduced bottom contact are...
- Patent number 7,989,251
- Issue date Aug 2, 2011
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a transistor gate of a recessed access device, me...
- Patent number 7,977,236
- Issue date Jul 12, 2011
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked memory cell structure and method of forming such a structure
- Patent number 7,978,491
- Issue date Jul 12, 2011
- Micron Technology, Inc.
- Hasan Nejad
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of fabricating integrated circuitry
- Patent number 7,932,173
- Issue date Apr 26, 2011
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided recessed silicon
- Patent number 7,557,032
- Issue date Jul 7, 2009
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming MRAM bit having a bottom sense layer utilizing e...
- Patent number 7,547,559
- Issue date Jun 16, 2009
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked columnar 1T-nMTj MRAM structure and its method of formation...
- Patent number 7,440,339
- Issue date Oct 21, 2008
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating integrated circuitry
- Patent number 7,387,959
- Issue date Jun 17, 2008
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked columnar 1T-nMTJ MRAM structure and its method of formation...
- Patent number 7,339,811
- Issue date Mar 4, 2008
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked 1T-nmemory cell structure
- Patent number 7,339,812
- Issue date Mar 4, 2008
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked 1T-nMTJ MRAM structure
- Patent number 7,330,367
- Issue date Feb 12, 2008
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Process flow for building MRAM structures
- Patent number 7,306,954
- Issue date Dec 11, 2007
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device assemblies, and methods of forming m...
- Patent number 7,279,762
- Issue date Oct 9, 2007
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming devices associated with semiconductor constructions
- Patent number 7,214,621
- Issue date May 8, 2007
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Columnar 1T-N memory cell structure
- Patent number 7,209,378
- Issue date Apr 24, 2007
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
MRAM memory cell having an electroplated bottom layer
- Patent number 7,183,621
- Issue date Feb 27, 2007
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked 1T-nmemory cell structure
- Patent number 7,042,749
- Issue date May 9, 2006
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory device assemblies
- Patent number 7,038,286
- Issue date May 2, 2006
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked columnar 1T-nMTJ structure and its method of formation and...
- Patent number 7,023,743
- Issue date Apr 4, 2006
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked 1T-nMTJ MRAM structure
- Patent number 6,940,748
- Issue date Sep 6, 2005
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of fabricating integrated circuitry
- Patent number 6,933,224
- Issue date Aug 23, 2005
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked 1T-nMTJ MRAM structure
- Patent number 6,882,566
- Issue date Apr 19, 2005
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked columnar resistive memory structure and its method of forma...
- Patent number 6,882,553
- Issue date Apr 19, 2005
- Micron Technology Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Stacked columnar 1T-nMTJ MRAM structure and its method of formation...
- Patent number 6,879,516
- Issue date Apr 12, 2005
- Micron Technology Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Process flow for building MRAM structures
- Patent number 6,828,639
- Issue date Dec 7, 2004
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory devices and assemblies; and methods of stor...
- Patent number 6,791,870
- Issue date Sep 14, 2004
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE HAVING REDUCED BOTTOM CONTACT ARE...
- Publication number 20120319073
- Publication date Dec 20, 2012
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VARIABLE RESISTANCE MEMORY DEVICE HAVING REDUCED BOTTOM CONTACT ARE...
- Publication number 20110303889
- Publication date Dec 15, 2011
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Integrated Circuitry
- Publication number 20110171825
- Publication date Jul 14, 2011
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming A Transistor Gate Of A Recessed Access Device, Me...
- Publication number 20090239366
- Publication date Sep 24, 2009
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Variable resistance memory device having reduced bottom contact are...
- Publication number 20080283815
- Publication date Nov 20, 2008
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Fabricating Integrated Circuitry
- Publication number 20080227289
- Publication date Sep 18, 2008
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked 1T-nmemory cell structure
- Publication number 20080180982
- Publication date Jul 31, 2008
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Method for forming MRAM bit having a bottom sense layer utilizing e...
- Publication number 20070161127
- Publication date Jul 12, 2007
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICIDED RECESSED SILICON
- Publication number 20070105357
- Publication date May 10, 2007
- Micron Technology, Inc.
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicided recessed silicon
- Publication number 20070049015
- Publication date Mar 1, 2007
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of utilizing magnetoresistive memory constructions
- Publication number 20070020774
- Publication date Jan 25, 2007
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Methods of forming devices associated with semiconductor constructions
- Publication number 20060263979
- Publication date Nov 23, 2006
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
1T-nmemory cell structure and its method of formation and operation
- Publication number 20060171224
- Publication date Aug 3, 2006
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive memory device assemblies, and methods of forming m...
- Publication number 20060076635
- Publication date Apr 13, 2006
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of fabricating integrated circuitry
- Publication number 20060030144
- Publication date Feb 9, 2006
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked columnar 1T-nMTj MRAM structure and its method of formation...
- Publication number 20050226038
- Publication date Oct 13, 2005
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Stacked columnar 1T-nMTJ MRAM structure and its method of formation...
- Publication number 20050226037
- Publication date Oct 13, 2005
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Stacked 1T-nmemory cell structure
- Publication number 20050226041
- Publication date Oct 13, 2005
- Micron Technology, Inc.
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Columnar 1T-nMemory cell structure and its method of formation and...
- Publication number 20050162883
- Publication date Jul 28, 2005
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Stacked IT-nMTJ MRAM structure
- Publication number 20050162898
- Publication date Jul 28, 2005
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive memory device assemblies
- Publication number 20050040453
- Publication date Feb 24, 2005
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming magnetoresistive memory devices and assemblies
- Publication number 20050014297
- Publication date Jan 20, 2005
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Stacked 1T-nMTJ MRAM structure
- Publication number 20040264242
- Publication date Dec 30, 2004
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Method of fabricating integrated circuitry
- Publication number 20040192028
- Publication date Sep 30, 2004
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked columnar 1T-nMTJ MRAM structure and its method of formation...
- Publication number 20040165421
- Publication date Aug 26, 2004
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Stacked columnar 1T-nMTJ MRAM structure and its method of formation...
- Publication number 20040165461
- Publication date Aug 26, 2004
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Method for forming MRAM bit having a bottom sense layer utilizing e...
- Publication number 20040152265
- Publication date Aug 5, 2004
- Hasan Nejad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked columnar 1T-nMTJ MRAM structure and its method of formation...
- Publication number 20040057276
- Publication date Mar 25, 2004
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Process flow for building MRAM structures
- Publication number 20040027844
- Publication date Feb 12, 2004
- Hasan Nejad
- G11 - INFORMATION STORAGE
Information Patent Application
Process flow for building MRAM structures
- Publication number 20040012056
- Publication date Jan 22, 2004
- Hasan Nejad
- G11 - INFORMATION STORAGE

Hasan Nejad

Person

Patents Grantslast 30 patents

Silicided recessed silicon

Variable resistance memory device having reduced bottom contact are...

Method of fabricating integrated circuitry

Variable resistance memory device having reduced bottom contact are...

Variable resistance memory device having reduced bottom contact are...

Method of forming a transistor gate of a recessed access device, me...

Stacked memory cell structure and method of forming such a structure

Method of fabricating integrated circuitry

Silicided recessed silicon

Method for forming MRAM bit having a bottom sense layer utilizing e...

Stacked columnar 1T-nMTj MRAM structure and its method of formation...

Method of fabricating integrated circuitry

Stacked columnar 1T-nMTJ MRAM structure and its method of formation...

Stacked 1T-nmemory cell structure

Stacked 1T-nMTJ MRAM structure

Process flow for building MRAM structures

Magnetoresistive memory device assemblies, and methods of forming m...

Methods of forming devices associated with semiconductor constructions

Columnar 1T-N memory cell structure

MRAM memory cell having an electroplated bottom layer

Stacked 1T-nmemory cell structure

Magnetoresistive memory device assemblies

Stacked columnar 1T-nMTJ structure and its method of formation and...

Stacked 1T-nMTJ MRAM structure

Method of fabricating integrated circuitry

Stacked 1T-nMTJ MRAM structure

Stacked columnar resistive memory structure and its method of forma...

Stacked columnar 1T-nMTJ MRAM structure and its method of formation...

Process flow for building MRAM structures

Magnetoresistive memory devices and assemblies; and methods of stor...

Patents Applicationslast 30 patents

VARIABLE RESISTANCE MEMORY DEVICE HAVING REDUCED BOTTOM CONTACT ARE...

VARIABLE RESISTANCE MEMORY DEVICE HAVING REDUCED BOTTOM CONTACT ARE...

Method of Fabricating Integrated Circuitry

Method Of Forming A Transistor Gate Of A Recessed Access Device, Me...

Variable resistance memory device having reduced bottom contact are...

Method of Fabricating Integrated Circuitry

Stacked 1T-nmemory cell structure

Method for forming MRAM bit having a bottom sense layer utilizing e...

SILICIDED RECESSED SILICON

Silicided recessed silicon

Methods of utilizing magnetoresistive memory constructions

Methods of forming devices associated with semiconductor constructions

1T-nmemory cell structure and its method of formation and operation

Magnetoresistive memory device assemblies, and methods of forming m...

Method of fabricating integrated circuitry

Stacked columnar 1T-nMTj MRAM structure and its method of formation...

Stacked columnar 1T-nMTJ MRAM structure and its method of formation...

Stacked 1T-nmemory cell structure

Columnar 1T-nMemory cell structure and its method of formation and...

Stacked IT-nMTJ MRAM structure

Magnetoresistive memory device assemblies

Methods of forming magnetoresistive memory devices and assemblies

Stacked 1T-nMTJ MRAM structure

Method of fabricating integrated circuitry

Stacked columnar 1T-nMTJ MRAM structure and its method of formation...

Stacked columnar 1T-nMTJ MRAM structure and its method of formation...

Method for forming MRAM bit having a bottom sense layer utilizing e...

Stacked columnar 1T-nMTJ MRAM structure and its method of formation...

Process flow for building MRAM structures

Process flow for building MRAM structures