He Zhi

Person

El Segundo, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
High performance III-nitride power device
- Patent number 9,472,626
- Issue date Oct 18, 2016
- Infineon Technologies Americas Corp.
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride power device
- Patent number 8,952,352
- Issue date Feb 10, 2015
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a III-nitride semiconductor device
- Patent number 8,940,567
- Issue date Jan 27, 2015
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhancement mode group III-V high electron mobility transistor (HEM...
- Patent number 8,604,486
- Issue date Dec 10, 2013
- International Rectifier Corporation
- Zhi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated AlGaN/GaN Schottky device
- Patent number 8,482,037
- Issue date Jul 9, 2013
- International Rectifier Corporation
- Zhi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride power semiconductor device
- Patent number 8,450,721
- Issue date May 28, 2013
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gated AlGaN/GaN heterojunction Schottky device
- Patent number 8,269,259
- Issue date Sep 18, 2012
- International Rectifier Corporation
- Zhi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor device
- Patent number 7,973,304
- Issue date Jul 5, 2011
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming thick oxides on Si or SiC for semiconductor dev...
- Patent number 7,754,550
- Issue date Jul 13, 2010
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen polar III-nitride heterojunction JFET
- Patent number 7,728,355
- Issue date Jun 1, 2010
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride semiconductor fabrication
- Patent number 7,399,692
- Issue date Jul 15, 2008
- International Rectifier Corporation
- Zhi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design with multiple spiral trench rings
- Patent number 7,196,397
- Issue date Mar 27, 2007
- International Rectifier Corporation
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
High Performance III-Nitride Power Device
- Publication number 20150171172
- Publication date Jun 18, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Device Fabrication
- Publication number 20150132933
- Publication date May 14, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Power Device
- Publication number 20130248884
- Publication date Sep 26, 2013
- INTERNATIONAL RECTIFIER CORPORATION
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gated AlGaN/GaN Schottky Device
- Publication number 20130001648
- Publication date Jan 3, 2013
- International Rectifier Corporation
- Zhi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement Mode Group III-V High Electron Mobility Transistor (HEM...
- Publication number 20120313106
- Publication date Dec 13, 2012
- INTERNATIONAL RECTIFIER CORPORATION
- Zhi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Fabricating a III-Nitride Semiconductor Device
- Publication number 20110244671
- Publication date Oct 6, 2011
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Power Semiconductor Device
- Publication number 20110241019
- Publication date Oct 6, 2011
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gated algan/gan heterojunction schottky device
- Publication number 20110133251
- Publication date Jun 9, 2011
- INTERNATIONAL RECTIFIER CORPORATION
- Zhi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor structure including a field modulation body and metho...
- Publication number 20110049569
- Publication date Mar 3, 2011
- INTERNATIONAL RECTIFIER CORPORATION
- Zhi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride semiconductor device
- Publication number 20080185613
- Publication date Aug 7, 2008
- International Rectifier Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen polar III-nitride heterojunction JFET
- Publication number 20070164314
- Publication date Jul 19, 2007
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE SEMICONDUCTOR FABRICATION
- Publication number 20070077745
- Publication date Apr 5, 2007
- Zhi He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Termination design with multiple spiral trench rings
- Publication number 20050230777
- Publication date Oct 20, 2005
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process for forming thick oxides on Si or SiC for semiconductor dev...
- Publication number 20050009255
- Publication date Jan 13, 2005
- International Rectifier Corp.
- Davide Chiola
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

High performance III-nitride power device

III-nitride power device

Method for fabricating a III-nitride semiconductor device

Enhancement mode group III-V high electron mobility transistor (HEM...

Gated AlGaN/GaN Schottky device

III-nitride power semiconductor device

Gated AlGaN/GaN heterojunction Schottky device

III-nitride semiconductor device

Process for forming thick oxides on Si or SiC for semiconductor dev...

Nitrogen polar III-nitride heterojunction JFET

III-nitride semiconductor fabrication

Termination design with multiple spiral trench rings

Patents Applicationslast 30 patents

High Performance III-Nitride Power Device

III-Nitride Semiconductor Device Fabrication

III-Nitride Power Device

Gated AlGaN/GaN Schottky Device

Enhancement Mode Group III-V High Electron Mobility Transistor (HEM...

Method for Fabricating a III-Nitride Semiconductor Device

III-Nitride Power Semiconductor Device

Gated algan/gan heterojunction schottky device

Semiconductor structure including a field modulation body and metho...

III-Nitride semiconductor device

Nitrogen polar III-nitride heterojunction JFET

III-NITRIDE SEMICONDUCTOR FABRICATION

Termination design with multiple spiral trench rings

Process for forming thick oxides on Si or SiC for semiconductor dev...