Heather Elizabeth Preuss

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Milton, VT, US

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Patents Grantslast 30 patents

Information Patent Grant
Method of fabricating a nitrided silicon oxide gate dielectric layer
- Patent number 7,737,050
- Issue date Jun 15, 2010
- International Business Machines Corporation
- Edward Dennis Adams
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FABRICATING A NITRIDED SILICON OXIDE GATE DIELECTRIC LAYER
- Publication number 20080102650
- Publication date May 1, 2008
- Edward Dennis Adams
- H01 - BASIC ELECTRIC ELEMENTS