Heedon Jeong

Person

Hwaseong-si, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device including a three-dimensional channel
- Patent number 10,840,142
- Issue date Nov 17, 2020
- Samsung Electronics Co., Ltd.
- Heedon Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,128,154
- Issue date Nov 13, 2018
- Samsung Electronics Co., Ltd.
- Heedon Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating semiconductor device including an etch barrie...
- Patent number 9,735,059
- Issue date Aug 15, 2017
- Samsung Electronics Co., Ltd.
- Heedon Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistors including multiple lattice constants a...
- Patent number 9,252,274
- Issue date Feb 2, 2016
- Samsung Electronics Co., Ltd.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 9,117,910
- Issue date Aug 25, 2015
- Samsung Electronics Co., Ltd.
- Heedon Jeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin field effect transistors including multiple lattice constants a...
- Patent number 8,941,155
- Issue date Jan 27, 2015
- Samsung Electronics Co., Ltd.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
- Publication number 20190074223
- Publication date Mar 7, 2019
- Samsung Electronics Co., Ltd.
- Heedon JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170365523
- Publication date Dec 21, 2017
- Samsung Electronics Co., Ltd.
- Heedon JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH FIN FIELD EFFECT TRANSISTORS
- Publication number 20160155741
- Publication date Jun 2, 2016
- Je-Min YOO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20150357245
- Publication date Dec 10, 2015
- Samsung Electronics Co., Ltd.
- Heedon JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS INCLUDING MULTIPLE LATTICE CONSTANTS A...
- Publication number 20150108545
- Publication date Apr 23, 2015
- Samsung Electronics Co., Ltd.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF
- Publication number 20140374830
- Publication date Dec 25, 2014
- HEEDON JEONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN FIELD EFFECT TRANSISTORS INCLUDING MULTIPLE LATTICE CONSTANTS A...
- Publication number 20130234204
- Publication date Sep 12, 2013
- SAMSUNG ELECTRONICS CO., LTD.
- Myung Gil Kang
- H01 - BASIC ELECTRIC ELEMENTS

Heedon Jeong

Person

Patents Grantslast 30 patents

Semiconductor device including a three-dimensional channel

Semiconductor device

Method of fabricating semiconductor device including an etch barrie...

Fin field effect transistors including multiple lattice constants a...

Semiconductor device and fabricating method thereof

Fin field effect transistors including multiple lattice constants a...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE WITH FIN FIELD EFFECT TRANSISTORS

METHOD OF FABRICATING SEMICONDUCTOR DEVICE

FIN FIELD EFFECT TRANSISTORS INCLUDING MULTIPLE LATTICE CONSTANTS A...

SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

FIN FIELD EFFECT TRANSISTORS INCLUDING MULTIPLE LATTICE CONSTANTS A...