Heiji Kobayashi

Follow

Person

Hsinchu City, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Method for fabricating bottom electrode of capacitors of DRAM
- Patent number 8,846,485
- Issue date Sep 30, 2014
- Powerchip Technology Corporation
- Heiji Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of vertical channel transistor array
- Patent number 8,536,008
- Issue date Sep 17, 2013
- Powerchip Technology Corporation
- Heiji Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical channel transistor array and manufacturing method thereof
- Patent number 8,390,062
- Issue date Mar 5, 2013
- Powerchip Technology Corporation
- Heiji Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MANUFACTURING METHOD OF VERTICAL CHANNEL TRANSISTOR ARRAY
- Publication number 20130130471
- Publication date May 23, 2013
- POWERCHIP TECHNOLOGY CORPORATION
- Heiji Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL CHANNEL TRANSISTOR ARRAY AND MANUFACTURING METHOD THEREOF
- Publication number 20120018801
- Publication date Jan 26, 2012
- POWERCHIP TECHNOLOGY CORPORATION
- Heiji Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING BOTTOM ELECTRODE OF CAPACITORS OF DRAM
- Publication number 20120015494
- Publication date Jan 19, 2012
- POWERCHIP TECHNOLOGY CORPORATION
- Heiji Kobayashi
- H01 - BASIC ELECTRIC ELEMENTS