Helmut Oefner

Person

Zorneding, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for forming a semiconductor device
- Patent number 11,742,215
- Issue date Aug 29, 2023
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device, silicon wafer and method of manufacturing a s...
- Patent number 10,957,767
- Issue date Mar 23, 2021
- Infineon Technologies AG
- Nico Caspary
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing CZ silicon wafers, and method of manufactur...
- Patent number 10,837,120
- Issue date Nov 17, 2020
- Infineon Technologies AG
- Johannes Freund
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing CZ silicon wafers, and method of manufactur...
- Patent number 10,724,149
- Issue date Jul 28, 2020
- Infineon Technologies AG
- Johannes Freund
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Semiconductor device, silicon wafer and method of manufacturing a s...
- Patent number 10,566,424
- Issue date Feb 18, 2020
- Infineon Technologies AG
- Nico Caspary
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping method
- Patent number 10,566,198
- Issue date Feb 18, 2020
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a variable carbon concentration
- Patent number 10,529,838
- Issue date Jan 7, 2020
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of planarizing SiC surfaces
- Patent number 10,319,599
- Issue date Jun 11, 2019
- Infineon Technologies AG
- Hans-Joachim Schulze
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method and assembly for determining the carbon content in silicon
- Patent number 10,317,338
- Issue date Jun 11, 2019
- Infineon Technologies AG
- Naveen Goud Ganagona
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing CZ silicon wafers, and method of manufactur...
- Patent number 10,273,597
- Issue date Apr 30, 2019
- Infineon Technologies AG
- Johannes Freund
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer and manufacturing method
- Patent number 10,026,816
- Issue date Jul 17, 2018
- Infineon Technologies AG
- Hans-Joachim Schulze
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device having a defined oxygen concentration
- Patent number 10,014,400
- Issue date Jul 3, 2018
- Infineon Technologies AG
- Helmut Oefner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of reducing defects in an epitaxial layer
- Patent number 9,972,488
- Issue date May 15, 2018
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device and a semiconductor device
- Patent number 9,972,704
- Issue date May 15, 2018
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing a silicon wafer
- Patent number 9,934,988
- Issue date Apr 3, 2018
- Infineon Technologies AG
- Werner Schustereder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device and a semiconductor device
- Patent number 9,853,137
- Issue date Dec 26, 2017
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor wafers and method of manufact...
- Patent number 9,779,931
- Issue date Oct 3, 2017
- Infineon Technologies AG
- Johannes Freund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for treating a semiconductor wafer
- Patent number 9,754,787
- Issue date Sep 5, 2017
- Infineon Technologies AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a semiconductor device and a semiconductor device
- Patent number 9,728,627
- Issue date Aug 8, 2017
- Infineon Technologies AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor wafer, and semiconductor d...
- Patent number 9,728,395
- Issue date Aug 8, 2017
- Infineon Technologies AG
- Helmut Oefner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer edge shape for thin wafer processing
- Patent number 9,721,907
- Issue date Aug 1, 2017
- Infineon Technologies AG
- Helmut Oefner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for postdoping a semiconductor wafer
- Patent number 9,559,020
- Issue date Jan 31, 2017
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single crystal ingot, semiconductor wafer and method of manufacturi...
- Patent number 9,536,838
- Issue date Jan 3, 2017
- Infineon Technologies AG
- Johannes Freund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for processing an oxygen containing semiconductor body
- Patent number 9,312,120
- Issue date Apr 12, 2016
- Infineon Technologies AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for postdoping a semiconductor wafer
- Patent number 9,245,811
- Issue date Jan 26, 2016
- Infineon Technologies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Methods for Forming a Semiconductor Device Having a Second Semicond...
- Publication number 20230395394
- Publication date Dec 7, 2023
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing CZ Silicon Wafers
- Publication number 20220042204
- Publication date Feb 10, 2022
- Hans-Joachim Schulze
- C30 - CRYSTAL GROWTH
Information Patent Application
Methods for Forming a Semiconductor Device
- Publication number 20220037165
- Publication date Feb 3, 2022
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING CZ SILICON WAFERS, AND METHOD OF MANUFACTUR...
- Publication number 20200224326
- Publication date Jul 16, 2020
- INFINEON TECHNOLOGIES AG
- Johannes Freund
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
SEMICONDUCTOR DEVICE, SILICON WAFER AND METHOD OF MANUFACTURING A S...
- Publication number 20200161424
- Publication date May 21, 2020
- INFINEON TECHNOLOGIES AG
- Nico CASPARY
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING CZ SILICON WAFERS, AND METHOD OF MANUFACTUR...
- Publication number 20190249330
- Publication date Aug 15, 2019
- INFINEON TECHNOLOGIES AG
- Johannes Freund
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Application
Doping Method
- Publication number 20190088482
- Publication date Mar 21, 2019
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Planarizing SiC Surfaces
- Publication number 20180350612
- Publication date Dec 6, 2018
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Device Having a Variable Carbon Concentration
- Publication number 20180102423
- Publication date Apr 12, 2018
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SILICON WAFER AND METHOD OF MANUFACTURING A S...
- Publication number 20180097064
- Publication date Apr 5, 2018
- INFINEON TECHNOLOGIES AG
- Nico CASPARY
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND ASSEMBLY FOR DETERMINING THE CARBON CONTENT IN SILICON
- Publication number 20180088042
- Publication date Mar 29, 2018
- INFINEON TECHNOLOGIES AG
- Naveen Goud GANAGONA
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF MANUFACTURING CZ SILICON WAFERS, AND METHOD OF MANUFACTUR...
- Publication number 20180002826
- Publication date Jan 4, 2018
- INFINEON TECHNOLOGIES AG
- Johannes Freund
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor Device Having a Defined Oxygen Concentration
- Publication number 20170316929
- Publication date Nov 2, 2017
- INFINEON TECHNOLOGIES AG
- Helmut Oefner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REDUCING DEFECTS IN AN EPITAXIAL LAYER
- Publication number 20170263440
- Publication date Sep 14, 2017
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Processing a Silicon Wafer
- Publication number 20170170028
- Publication date Jun 15, 2017
- INFINEON TECHNOLOGIES AG
- Werner Schustereder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wafer Edge Shape for Thin Wafer Processing
- Publication number 20170141049
- Publication date May 18, 2017
- INFINEON TECHNOLOGIES AG
- Helmut Oefner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Semiconductor Wafers and Method of Manufact...
- Publication number 20170103882
- Publication date Apr 13, 2017
- INFINEON TECHNOLOGIES AG
- Johannes Freund
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SILICON WAFER AND METHOD OF MANUFACTURING A S...
- Publication number 20170062568
- Publication date Mar 2, 2017
- INFINEON TECHNOLOGIES AG
- Nico CASPARY
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR WAFER AND MANUFACTURING METHOD
- Publication number 20160293712
- Publication date Oct 6, 2016
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming a Semiconductor Device and a Semiconductor Device
- Publication number 20160141399
- Publication date May 19, 2016
- INFINEON TECHNOLOGIES AG
- Moriz Jelinek
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Semiconductor Wafer, and Semiconductor D...
- Publication number 20160104622
- Publication date Apr 14, 2016
- INFINEON TECHNOLOGIES AG
- Helmut Oefner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR POSTDOPING A SEMICONDUCTOR WAFER
- Publication number 20160099186
- Publication date Apr 7, 2016
- INFINEON TECHNOLOGIES AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Processing an Oxygen Containing Semiconductor Body
- Publication number 20160064206
- Publication date Mar 3, 2016
- INFINEON TECHNOLOGIES AG
- Hans-Joachim Schulze
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Treating a Semiconductor Wafer
- Publication number 20150371858
- Publication date Dec 24, 2015
- INFINEON TECHNOLOGIES AG
- Johannes Laven
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR POSTDOPING A SEMICONDUCTOR WAFER
- Publication number 20150050754
- Publication date Feb 19, 2015
- Infineon Technonogies AG
- Reinhard Ploss
- H01 - BASIC ELECTRIC ELEMENTS

Helmut Oefner

Person

Patents Grantslast 30 patents

Methods for forming a semiconductor device

Semiconductor device, silicon wafer and method of manufacturing a s...

Method of manufacturing CZ silicon wafers, and method of manufactur...

Method of manufacturing CZ silicon wafers, and method of manufactur...

Semiconductor device, silicon wafer and method of manufacturing a s...

Doping method

Semiconductor device having a variable carbon concentration

Methods of planarizing SiC surfaces

Method and assembly for determining the carbon content in silicon

Method of manufacturing CZ silicon wafers, and method of manufactur...

Semiconductor wafer and manufacturing method

Semiconductor device having a defined oxygen concentration

Method of reducing defects in an epitaxial layer

Method for forming a semiconductor device and a semiconductor device

Method for processing a silicon wafer

Method for forming a semiconductor device and a semiconductor device

Method of manufacturing semiconductor wafers and method of manufact...

Method for treating a semiconductor wafer

Method for forming a semiconductor device and a semiconductor device

Method for manufacturing a semiconductor wafer, and semiconductor d...

Wafer edge shape for thin wafer processing

Method for postdoping a semiconductor wafer

Single crystal ingot, semiconductor wafer and method of manufacturi...

Method for processing an oxygen containing semiconductor body

Method for postdoping a semiconductor wafer

Patents Applicationslast 30 patents

Methods for Forming a Semiconductor Device Having a Second Semicond...

Method of Manufacturing CZ Silicon Wafers

Methods for Forming a Semiconductor Device

METHOD OF MANUFACTURING CZ SILICON WAFERS, AND METHOD OF MANUFACTUR...

SEMICONDUCTOR DEVICE, SILICON WAFER AND METHOD OF MANUFACTURING A S...

METHOD OF MANUFACTURING CZ SILICON WAFERS, AND METHOD OF MANUFACTUR...

Doping Method

Methods of Planarizing SiC Surfaces

Semiconductor Device Having a Variable Carbon Concentration

SEMICONDUCTOR DEVICE, SILICON WAFER AND METHOD OF MANUFACTURING A S...

METHOD AND ASSEMBLY FOR DETERMINING THE CARBON CONTENT IN SILICON

METHOD OF MANUFACTURING CZ SILICON WAFERS, AND METHOD OF MANUFACTUR...

Semiconductor Device Having a Defined Oxygen Concentration

METHOD OF REDUCING DEFECTS IN AN EPITAXIAL LAYER

Method for Processing a Silicon Wafer

Wafer Edge Shape for Thin Wafer Processing

Method of Manufacturing Semiconductor Wafers and Method of Manufact...

SEMICONDUCTOR DEVICE, SILICON WAFER AND METHOD OF MANUFACTURING A S...

SEMICONDUCTOR WAFER AND MANUFACTURING METHOD

Method for Forming a Semiconductor Device and a Semiconductor Device

Method for Manufacturing a Semiconductor Wafer, and Semiconductor D...

METHOD FOR POSTDOPING A SEMICONDUCTOR WAFER

Method for Processing an Oxygen Containing Semiconductor Body

Method for Treating a Semiconductor Wafer

METHOD FOR POSTDOPING A SEMICONDUCTOR WAFER