Hemant Deshpande

Person

Beaverton, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Enhanced dislocation stress transistor
- Patent number 10,084,087
- Issue date Sep 25, 2018
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced dislocation stress transistor
- Patent number 9,660,078
- Issue date May 23, 2017
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced dislocation stress transistor
- Patent number 9,231,076
- Issue date Jan 5, 2016
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced dislocation stress transistor
- Patent number 9,076,814
- Issue date Jul 7, 2015
- Intel Corporation
- Cory Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced dislocation stress transistor
- Patent number 8,779,477
- Issue date Jul 15, 2014
- Intel Corporation
- Cory Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of channel stress engineering and structures formed thereby
- Patent number 8,716,806
- Issue date May 6, 2014
- Intel Corporation
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of channel stress engineering and structures formed thereby
- Patent number 8,193,049
- Issue date Jun 5, 2012
- Intel Corporation
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained silicon MOS device with box layer between the source and d...
- Patent number 7,422,950
- Issue date Sep 9, 2008
- Intel Corporation
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
ENHANCED DISLOCATION STRESS TRANSISTOR
- Publication number 20170222052
- Publication date Aug 3, 2017
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED DISLOCATION STRESS TRANSISTOR
- Publication number 20160079423
- Publication date Mar 17, 2016
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED DISLOCATION STRESS TRANSISTOR
- Publication number 20150155384
- Publication date Jun 4, 2015
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED DISLOCATION STRESS TRANSISTOR
- Publication number 20140284626
- Publication date Sep 25, 2014
- Cory Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF CHANNEL STRESS ENGINEERING AND STRUCTURES FORMED THEREBY
- Publication number 20120211839
- Publication date Aug 23, 2012
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of channel stress engineering and structures formed thereby
- Publication number 20100148270
- Publication date Jun 17, 2010
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED DISLOCATION STRESS TRANSISTOR
- Publication number 20100038685
- Publication date Feb 18, 2010
- Cory Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation body for semiconductor devices and method to form the same
- Publication number 20070132034
- Publication date Jun 14, 2007
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Strained silicon MOS device with box layer between the source and d...
- Publication number 20070134859
- Publication date Jun 14, 2007
- Intel Corporation
- Giuseppe Curello
- H01 - BASIC ELECTRIC ELEMENTS

Hemant Deshpande

Person

Patents Grantslast 30 patents

Enhanced dislocation stress transistor

Enhanced dislocation stress transistor

Enhanced dislocation stress transistor

Enhanced dislocation stress transistor

Enhanced dislocation stress transistor

Methods of channel stress engineering and structures formed thereby

Methods of channel stress engineering and structures formed thereby

Strained silicon MOS device with box layer between the source and d...

Patents Applicationslast 30 patents

ENHANCED DISLOCATION STRESS TRANSISTOR

ENHANCED DISLOCATION STRESS TRANSISTOR

ENHANCED DISLOCATION STRESS TRANSISTOR

ENHANCED DISLOCATION STRESS TRANSISTOR

METHODS OF CHANNEL STRESS ENGINEERING AND STRUCTURES FORMED THEREBY

Methods of channel stress engineering and structures formed thereby

ENHANCED DISLOCATION STRESS TRANSISTOR

Isolation body for semiconductor devices and method to form the same

Strained silicon MOS device with box layer between the source and d...