Hemanth Jagannathan

Person

Niskayuna, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Self-aligned uniform bottom spacers for VTFETS
- Patent number 11,973,125
- Issue date Apr 30, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low-resistance top contact on VTFET
- Patent number 11,908,923
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical FET with contact to gate above active fin
- Patent number 11,855,191
- Issue date Dec 26, 2023
- International Business Machines Corporation
- Brent Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of forming the semiconductor device
- Patent number 11,842,998
- Issue date Dec 12, 2023
- International Business Machines Corporation
- Robin Hsin Kuo Chao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local isolation of source/drain for reducing parasitic capacitance...
- Patent number 11,742,246
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming crossbar and non-crossbar transistors on the same substrate
- Patent number 11,742,426
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Indira Seshadri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with bottom spacer
- Patent number 11,646,373
- Issue date May 9, 2023
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS top source/drain region doping and epitaxial growth for a vert...
- Patent number 11,615,990
- Issue date Mar 28, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field-effect transistor late gate recess process with impr...
- Patent number 11,575,022
- Issue date Feb 7, 2023
- International Business Machines Corporation
- Wenyu Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-metal dipole doping to offer multi-threshold voltage pairs wi...
- Patent number 11,393,725
- Issue date Jul 19, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact source/drain resistance
- Patent number 11,322,588
- Issue date May 3, 2022
- International Business Machines Corporation
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate process for vertical transport field-effect...
- Patent number 11,271,106
- Issue date Mar 8, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement metal gate process for vertical transport field-effect...
- Patent number 11,257,721
- Issue date Feb 22, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned uniform bottom spacers for VTFETS
- Patent number 11,251,287
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Approach to control over-etching of bottom spacers in vertical fin...
- Patent number 11,251,285
- Issue date Feb 15, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Replacement bottom spacer for vertical transport field effect trans...
- Patent number 11,239,119
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transport field effect transistor structure with self-alig...
- Patent number 11,239,360
- Issue date Feb 1, 2022
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device with pure silicon oxide layer on silicon-germanium layer
- Patent number 11,217,450
- Issue date Jan 4, 2022
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor with bottom spacer
- Patent number 11,217,692
- Issue date Jan 4, 2022
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field effect transistors with different threshold vo...
- Patent number 11,211,379
- Issue date Dec 28, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Liner and cap structures for reducing local interconnect vertical r...
- Patent number 11,205,587
- Issue date Dec 21, 2021
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-metal dipole doping to offer multi-threshold voltage pairs wi...
- Patent number 11,195,762
- Issue date Dec 7, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of field effect transistors with different threshold vo...
- Patent number 11,177,257
- Issue date Nov 16, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Local isolation of source/drain for reducing parasitic capacitance...
- Patent number 11,152,265
- Issue date Oct 19, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-last process for vertical transport field-effect transistor
- Patent number 11,145,555
- Issue date Oct 12, 2021
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface area enhancement for stacked metal-insulator-metal (MIM) ca...
- Patent number 11,121,209
- Issue date Sep 14, 2021
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Oxide isolated fin-type field-effect transistors
- Patent number 11,094,801
- Issue date Aug 17, 2021
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source-drain contacts using high temperature silicides
- Patent number 11,088,033
- Issue date Aug 10, 2021
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source-drain contacts using high temperature silicides
- Patent number 11,062,956
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Efficient metal-insulator-metal capacitor
- Patent number 10,978,550
- Issue date Apr 13, 2021
- Tessera, Inc.
- Kisup Chung
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT
- Publication number 20240186375
- Publication date Jun 6, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STAGGERED PITCH STACKED VERTICAL TRANSPORT FIELD-EFFECT TRANSISTORS
- Publication number 20240063223
- Publication date Feb 22, 2024
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VTFET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20240021609
- Publication date Jan 18, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED BOTTOM SPACER
- Publication number 20240014208
- Publication date Jan 11, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TOP CONTACT STRUCTURES FOR STACKED TRANSISTORS
- Publication number 20230395596
- Publication date Dec 7, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CROSSBAR AND NON-CROSSBAR TRANSISTORS ON THE SAME SUBSTRATE
- Publication number 20230369492
- Publication date Nov 16, 2023
- International Business Machines Corporation
- INDIRA SESHADRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY STACKED VERTICAL TRANSISTOR STATIC RANDOM ACCESS MEMOR...
- Publication number 20230320055
- Publication date Oct 5, 2023
- International Business Machines Corporation
- Brent A Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCING CHANNEL STRUCTURE TIP DAMAGE DURING SPACER DEPOSITION
- Publication number 20230261049
- Publication date Aug 17, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION
- Publication number 20230187442
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERT...
- Publication number 20230154801
- Publication date May 18, 2023
- International Business Machines Corporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Late Gate Extension
- Publication number 20230139379
- Publication date May 4, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN
- Publication number 20230104456
- Publication date Apr 6, 2023
- International Business Machines Corporation
- Brent ANDERSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOOPED LONG CHANNEL FIELD-EFFECT TRANSISTOR
- Publication number 20230101235
- Publication date Mar 30, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED C-SHAPED VERTICAL FIELD EFFECT TRANSISTOR
- Publication number 20230067119
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FET WITH REDUCED PARASITIC CAPACITANCE
- Publication number 20230063973
- Publication date Mar 2, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING CROSSBAR AND NON-CROSSBAR TRANSISTORS ON THE SAME SUBSTRATE
- Publication number 20220367700
- Publication date Nov 17, 2022
- International Business Machines Corporation
- INDIRA SESHADRI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED UNIFORM BOTTOM SPACERS FOR VTFETS
- Publication number 20220149179
- Publication date May 12, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER
- Publication number 20220059696
- Publication date Feb 24, 2022
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL ISOLATION OF SOURCE/DRAIN FOR REDUCING PARASITIC CAPACITANCE...
- Publication number 20220037210
- Publication date Feb 3, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED UNIFORM BOTTOM SPACERS FOR VTFETS
- Publication number 20210320186
- Publication date Oct 14, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERT...
- Publication number 20210305104
- Publication date Sep 30, 2021
- International Business Machines Cdorporation
- Heng Wu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER
- Publication number 20210217889
- Publication date Jul 15, 2021
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...
- Publication number 20210151583
- Publication date May 20, 2021
- International Business Machines Corporation
- Wenyu XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT SOURCE/DRAIN RESISTANCE
- Publication number 20210111246
- Publication date Apr 15, 2021
- International Business Machines Corporation
- Fee Li Lie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANS...
- Publication number 20210098597
- Publication date Apr 1, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOCAL ISOLATION OF SOURCE/DRAIN FOR REDUCING PARASITIC CAPACITANCE...
- Publication number 20210035867
- Publication date Feb 4, 2021
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE TOP CONTACT ON VTFET
- Publication number 20210005735
- Publication date Jan 7, 2021
- International Business Machines Corporation
- Christopher J. Waskiewicz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...
- Publication number 20200321448
- Publication date Oct 8, 2020
- International Business Machines Corporation
- Wenyu XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE FIRST TECHNIQUE IN VERTICAL TRANSPORT FET USING DOPED SILICON...
- Publication number 20200295147
- Publication date Sep 17, 2020
- International Business Machines Corporation
- RUQIANG BAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EFFICIENT METAL-INSULATOR-METAL CAPACITOR
- Publication number 20200273947
- Publication date Aug 27, 2020
- Tessera, Inc.
- Kisup Chung
- H01 - BASIC ELECTRIC ELEMENTS

Hemanth Jagannathan

Person

Patents Grantslast 30 patents

Self-aligned uniform bottom spacers for VTFETS

Low-resistance top contact on VTFET

Vertical FET with contact to gate above active fin

Semiconductor device and method of forming the semiconductor device

Local isolation of source/drain for reducing parasitic capacitance...

Forming crossbar and non-crossbar transistors on the same substrate

Vertical field effect transistor with bottom spacer

CMOS top source/drain region doping and epitaxial growth for a vert...

Vertical field-effect transistor late gate recess process with impr...

Multi-metal dipole doping to offer multi-threshold voltage pairs wi...

Contact source/drain resistance

Replacement metal gate process for vertical transport field-effect...

Replacement metal gate process for vertical transport field-effect...

Self-aligned uniform bottom spacers for VTFETS

Approach to control over-etching of bottom spacers in vertical fin...

Replacement bottom spacer for vertical transport field effect trans...

Vertical transport field effect transistor structure with self-alig...

Device with pure silicon oxide layer on silicon-germanium layer

Vertical field effect transistor with bottom spacer

Fabrication of field effect transistors with different threshold vo...

Liner and cap structures for reducing local interconnect vertical r...

Multi-metal dipole doping to offer multi-threshold voltage pairs wi...

Fabrication of field effect transistors with different threshold vo...

Local isolation of source/drain for reducing parasitic capacitance...

Gate-last process for vertical transport field-effect transistor

Surface area enhancement for stacked metal-insulator-metal (MIM) ca...

Oxide isolated fin-type field-effect transistors

Low resistance source-drain contacts using high temperature silicides

Low resistance source-drain contacts using high temperature silicides

Efficient metal-insulator-metal capacitor

Patents Applicationslast 30 patents

VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT

STAGGERED PITCH STACKED VERTICAL TRANSPORT FIELD-EFFECT TRANSISTORS

VTFET WITH REDUCED PARASITIC CAPACITANCE

SELF-ALIGNED BOTTOM SPACER

TOP CONTACT STRUCTURES FOR STACKED TRANSISTORS

FORMING CROSSBAR AND NON-CROSSBAR TRANSISTORS ON THE SAME SUBSTRATE

HIGH DENSITY STACKED VERTICAL TRANSISTOR STATIC RANDOM ACCESS MEMOR...

REDUCING CHANNEL STRUCTURE TIP DAMAGE DURING SPACER DEPOSITION

VERTICAL FIELD EFFECT TRANSISTOR WITH MINIMAL CONTACT TO GATE EROSION

CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERT...

Late Gate Extension

VERTICAL FET WITH CONTACT TO GATE ABOVE ACTIVE FIN

LOOPED LONG CHANNEL FIELD-EFFECT TRANSISTOR

SELF-ALIGNED C-SHAPED VERTICAL FIELD EFFECT TRANSISTOR

FET WITH REDUCED PARASITIC CAPACITANCE

FORMING CROSSBAR AND NON-CROSSBAR TRANSISTORS ON THE SAME SUBSTRATE

SELF-ALIGNED UNIFORM BOTTOM SPACERS FOR VTFETS

VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER

LOCAL ISOLATION OF SOURCE/DRAIN FOR REDUCING PARASITIC CAPACITANCE...

SELF-ALIGNED UNIFORM BOTTOM SPACERS FOR VTFETS

CMOS TOP SOURCE/DRAIN REGION DOPING AND EPITAXIAL GROWTH FOR A VERT...

VERTICAL FIELD EFFECT TRANSISTOR WITH BOTTOM SPACER

VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...

CONTACT SOURCE/DRAIN RESISTANCE

REPLACEMENT BOTTOM SPACER FOR VERTICAL TRANSPORT FIELD EFFECT TRANS...

LOCAL ISOLATION OF SOURCE/DRAIN FOR REDUCING PARASITIC CAPACITANCE...

LOW-RESISTANCE TOP CONTACT ON VTFET

VERTICAL FIELD-EFFECT TRANSISTOR LATE GATE RECESS PROCESS WITH IMPR...

GATE FIRST TECHNIQUE IN VERTICAL TRANSPORT FET USING DOPED SILICON...

EFFICIENT METAL-INSULATOR-METAL CAPACITOR