Henry Chin

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Memory programming techniques to reduce power consumption
- Patent number 12,154,635
- Issue date Nov 26, 2024
- SanDdisk Technologies LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device with unique read and/or programming parameters
- Patent number 12,057,161
- Issue date Aug 6, 2024
- SanDisk Technologies LLC
- Wei Zhao
- G11 - INFORMATION STORAGE
Information Patent Grant
Programming of memory cells using a memory string dependent program...
- Patent number 12,051,467
- Issue date Jul 30, 2024
- SanDisk Technologies LLC
- Huai-Yuan Tseng
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for checking vulnerability to cross-temperature read err...
- Patent number 11,972,804
- Issue date Apr 30, 2024
- SanDisk Technologies, LLC
- Xuan Tian
- G11 - INFORMATION STORAGE
Information Patent Grant
Read pass voltage dependent recovery voltage setting between progra...
- Patent number 11,972,810
- Issue date Apr 30, 2024
- SanDisk Technologies, LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Mixing normal and reverse order programming in NAND memory devices
- Patent number 11,967,382
- Issue date Apr 23, 2024
- SanDisk Technologies, LLC
- Qing Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Temperature-dependent word line voltage and discharge rate for refr...
- Patent number 11,894,051
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Dong-Il Moon
- G11 - INFORMATION STORAGE
Information Patent Grant
Time-tagging read levels of multiple wordlines for open block data...
- Patent number 11,894,080
- Issue date Feb 6, 2024
- SanDisk Technologies LLC
- Erika Penzo
- G11 - INFORMATION STORAGE
Information Patent Grant
Word line zoned adaptive initial program voltage for non-volatile m...
- Patent number 11,854,620
- Issue date Dec 26, 2023
- SanDisk Technologies LLC
- Erika Penzo
- G11 - INFORMATION STORAGE
Information Patent Grant
Digital temperature compensation filtering
- Patent number 11,705,203
- Issue date Jul 18, 2023
- SanDisk Technologies LLC
- Henry Chin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Reliability compensation for uneven NAND block degradation
- Patent number 11,646,081
- Issue date May 9, 2023
- SanDisk Technologies LLC
- Xiang Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mapping for multi-state programming of memory devices
- Patent number 11,636,039
- Issue date Apr 25, 2023
- Western Digital Technologies, Inc.
- Bernie Rub
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Peak current and program time optimization through loop dependent v...
- Patent number 11,636,897
- Issue date Apr 25, 2023
- SanDisk Technologies LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Grant
Countermeasure modes to address neighbor plane disturb condition in...
- Patent number 11,605,436
- Issue date Mar 14, 2023
- SanDisk Technologies LLC
- Henry Chin
- G11 - INFORMATION STORAGE
Information Patent Grant
Triggering next state verify in program loop for nonvolatile memory
- Patent number 11,521,691
- Issue date Dec 6, 2022
- SanDisk Technologies LLC
- Hua-Ling Hsu
- G11 - INFORMATION STORAGE
Information Patent Grant
Mapping for multi-state programming of memory devices
- Patent number 11,372,765
- Issue date Jun 28, 2022
- Western Digital Technologies, Inc.
- Bernie Rub
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Modified verify scheme for programming a memory apparatus
- Patent number 11,244,734
- Issue date Feb 8, 2022
- SanDisk Technologies LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE
Information Patent Grant
Controlling word line voltages to reduce read disturb in a memory d...
- Patent number 11,205,493
- Issue date Dec 21, 2021
- SanDisk Technologies LLC
- Abu Naser Zainuddin
- G11 - INFORMATION STORAGE
Information Patent Grant
Neighbor word line compensation full sequence program scheme
- Patent number 11,139,031
- Issue date Oct 5, 2021
- SanDisk Technologies LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with multi-plane mixed sub-block programming
- Patent number 11,101,001
- Issue date Aug 24, 2021
- SanDisk Technologies LLC
- Henry Chin
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with bit line controlled multi-plane mixed sub-...
- Patent number 11,087,849
- Issue date Aug 10, 2021
- SanDisk Technologies LLC
- Henry Chin
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-volatile memory with program verify skip
- Patent number 11,049,578
- Issue date Jun 29, 2021
- SanDisk Technologies LLC
- Shota Murai
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic bit-scan techniques for memory device programming
- Patent number 10,971,222
- Issue date Apr 6, 2021
- SanDisk Technologies LLC
- Lei Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Reprogramming memory cells to tighten threshold voltage distributio...
- Patent number 10,964,402
- Issue date Mar 30, 2021
- SanDisk Technologies LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
NAND string pre-charge during programming by injecting holes via su...
- Patent number 10,957,394
- Issue date Mar 23, 2021
- SanDisk Technologies LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of reducing injection type of program disturb during program...
- Patent number 10,811,110
- Issue date Oct 20, 2020
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of reducing injection type of program disturb during program...
- Patent number 10,770,157
- Issue date Sep 8, 2020
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
State adaptive predictive programming
- Patent number 10,748,622
- Issue date Aug 18, 2020
- SanDisk Technologies LLC
- Lei Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mapping for multi-state programming of memory devices
- Patent number 10,705,966
- Issue date Jul 7, 2020
- Western Digital Technologies, Inc.
- Bernie Rub
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device with discharge voltage pulse to reduce injection type...
- Patent number 10,665,306
- Issue date May 26, 2020
- SanDisk Technologies LLC
- Hong-Yan Chen
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
ANALOG BITSCAN TECHNIQUES IN A MEMORY DEVICE
- Publication number 20250006277
- Publication date Jan 2, 2025
- Western Digital Technologies, Inc.
- Hua-Ling Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING TECHNIQUES THAT UTILIZE ANALOG BITSCAN IN A MEMORY DEVICE
- Publication number 20250006266
- Publication date Jan 2, 2025
- Western Digital Technologies, Inc.
- Hua-Ling Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING TECHNIQUES THAT UTILIZE ANALOG BITSCAN IN A MEMORY DEVICE
- Publication number 20250006279
- Publication date Jan 2, 2025
- Western Digital Technologies, Inc.
- Hua-Ling Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE TECHNIQUES USING ANALOG BITSCAN IN A MEMORY DEVICE
- Publication number 20250006278
- Publication date Jan 2, 2025
- Western Digital Technologies, Inc.
- Henry Chin
- G11 - INFORMATION STORAGE
Information Patent Application
SYSTEMS AND METHODS TO AVOID OVER PROGRAMMING AT INFREQUENT SMART V...
- Publication number 20240428871
- Publication date Dec 26, 2024
- Western Digital Technologies, Inc.
- Kyeongran Yoo
- G11 - INFORMATION STORAGE
Information Patent Application
LOWER VREAD FOR ERASED WORD LINES IN POST-WRITE DUMMY READS
- Publication number 20240385769
- Publication date Nov 21, 2024
- Western Digital Technologies, Inc.
- Yanwei He
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
NONVOLATILE MEMORY WITH ONGOING PROGRAM READ
- Publication number 20240221803
- Publication date Jul 4, 2024
- SANDISK TECHNOLOGIES LLC
- Hua-Ling Cynthia Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
WORD LINE-DEPENDENT WORD LINE AND CHANNEL READ SETUP TIME IN FIRST...
- Publication number 20240212737
- Publication date Jun 27, 2024
- SANDISK TECHNOLOGIES LLC
- Dong-il Moon
- G11 - INFORMATION STORAGE
Information Patent Application
BINARY SEARCH BIT ERROR RATE ESTIMATION SCAN FOR NON-VOLATILE MEMOR...
- Publication number 20240185943
- Publication date Jun 6, 2024
- Western Digital Technologies, Inc.
- Salil Kale
- G11 - INFORMATION STORAGE
Information Patent Application
PRECHARGE SCHEME DURING PROGRAMMING OF A MEMORY DEVICE
- Publication number 20240079062
- Publication date Mar 7, 2024
- SANDISK TECHNOLOGIES LLC
- Jiacen Guo
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID SMART VERIFY FOR QLC/TLC DIE
- Publication number 20240071524
- Publication date Feb 29, 2024
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR CHECKING VULNERABILITY TO CROSS-TEMPERATURE READ ERR...
- Publication number 20230420053
- Publication date Dec 28, 2023
- SANDISK TECHNOLOGIES LLC
- Xuan Tian
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE WITH UNIQUE READ AND/OR PROGRAMMING PARAMETERS
- Publication number 20230420042
- Publication date Dec 28, 2023
- SANDISK TECHNOLOGIES LLC
- Wei Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
RELIABILITY IMPROVEMENT THROUGH DELAY BETWEEN MULTI-STAGE PROGRAMMI...
- Publication number 20230420051
- Publication date Dec 28, 2023
- SANDISK TECHNOLOGIES LLC
- Xue Qing Cai
- G11 - INFORMATION STORAGE
Information Patent Application
TEMPERATURE-DEPENDENT WORD LINE VOLTAGE AND DISCHARGE RATE FOR REFR...
- Publication number 20230410901
- Publication date Dec 21, 2023
- SANDISK TECHNOLOGIES LLC
- Dong-Il Moon
- G11 - INFORMATION STORAGE
Information Patent Application
HYBRID PRECHARGE SELECT SCHEME TO SAVE PROGRAM ICC
- Publication number 20230410923
- Publication date Dec 21, 2023
- SANDISK TECHNOLOGIES LLC
- Wei Zhao
- G11 - INFORMATION STORAGE
Information Patent Application
READ PASS VOLTAGE DEPENDENT RECOVERY VOLTAGE SETTING BETWEEN PROGRA...
- Publication number 20230410920
- Publication date Dec 21, 2023
- SANDISK TECHNOLOGIES LLC
- Han-Ping Chen
- G11 - INFORMATION STORAGE
Information Patent Application
TIME-TAGGING READ LEVELS OF MULTIPLE WORDLINES FOR OPEN BLOCK DATA...
- Publication number 20230352108
- Publication date Nov 2, 2023
- SANDISK TECHNOLOGIES LLC
- Erika Penzo
- G11 - INFORMATION STORAGE
Information Patent Application
MIXING NORMAL AND REVERSE ORDER PROGRAMMING IN NAND MEMORY DEVICES
- Publication number 20230253046
- Publication date Aug 10, 2023
- SANDISK TECHNOLOGIES LLC
- Qing Li
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY PROGRAMMING TECHNIQUES TO REDUCE POWER CONSUMPTION
- Publication number 20230066972
- Publication date Mar 2, 2023
- SANDISK TECHNOLOGIES LLC
- Yu-Chung Lien
- G11 - INFORMATION STORAGE
Information Patent Application
RELIABILITY COMPENSATION FOR UNEVEN NAND BLOCK DEGRADATION
- Publication number 20230041476
- Publication date Feb 9, 2023
- SANDISK TECHNOLOGIES LLC
- Xiang Yang
- G11 - INFORMATION STORAGE
Information Patent Application
DIGITAL TEMPERATURE COMPENSATION FILTERING
- Publication number 20220406383
- Publication date Dec 22, 2022
- SANDISK TECHNOLOGIES LLC
- Henry Chin
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
WORD LINE ZONED ADAPTIVE INITIAL PROGRAM VOLTAGE FOR NON-VOLATILE M...
- Publication number 20220406380
- Publication date Dec 22, 2022
- SANDISK TECHNOLOGIES LLC
- Erika Penzo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COUNTERMEASURE MODES TO ADDRESS NEIGHBOR PLANE DISTURB CONDITION IN...
- Publication number 20220399061
- Publication date Dec 15, 2022
- SANDISK TECHNOLOGIES LLC
- Henry Chin
- G11 - INFORMATION STORAGE
Information Patent Application
TRIGGERING NEXT STATE VERIFY IN PROGRAM LOOP FOR NONVOLATILE MEMORY
- Publication number 20220392551
- Publication date Dec 8, 2022
- SANDISK TECHNOLOGIES LLC
- Hua-Ling Hsu
- G11 - INFORMATION STORAGE
Information Patent Application
Mapping for Multi-State Programming of Memory Devices
- Publication number 20220283950
- Publication date Sep 8, 2022
- Western Digital Technologies, Inc.
- Bernie RUB
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
PEAK CURRENT AND PROGRAM TIME OPTIMIZATION THROUGH LOOP DEPENDENT V...
- Publication number 20220284964
- Publication date Sep 8, 2022
- SANDISK TECHNOLOGIES LLC
- Yanjie Wang
- G11 - INFORMATION STORAGE
Information Patent Application
COUPLING CAPACITANCE REDUCTION DURING PROGRAM VERIFY FOR PERFORMANC...
- Publication number 20210383879
- Publication date Dec 9, 2021
- SANDISK TECHNOLOGIES LLC
- Lei Lin
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING OF MEMORY CELLS USING A MEMORY STRING DEPENDENT PROGRAM...
- Publication number 20210383870
- Publication date Dec 9, 2021
- SANDISK TECHNOLOGIES LLC
- Huai-Yuan Tseng
- G11 - INFORMATION STORAGE
Information Patent Application
MODIFIED VERIFY SCHEME FOR PROGRAMMING A MEMORY APPARATUS
- Publication number 20210202022
- Publication date Jul 1, 2021
- SANDISK TECHNOLOGIES LLC
- Ashish Baraskar
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Memory programming techniques to reduce power consumption

Memory device with unique read and/or programming parameters

Programming of memory cells using a memory string dependent program...

Techniques for checking vulnerability to cross-temperature read err...

Read pass voltage dependent recovery voltage setting between progra...

Mixing normal and reverse order programming in NAND memory devices

Temperature-dependent word line voltage and discharge rate for refr...

Time-tagging read levels of multiple wordlines for open block data...

Word line zoned adaptive initial program voltage for non-volatile m...

Digital temperature compensation filtering

Reliability compensation for uneven NAND block degradation

Mapping for multi-state programming of memory devices

Peak current and program time optimization through loop dependent v...

Countermeasure modes to address neighbor plane disturb condition in...

Triggering next state verify in program loop for nonvolatile memory

Mapping for multi-state programming of memory devices

Modified verify scheme for programming a memory apparatus

Controlling word line voltages to reduce read disturb in a memory d...

Neighbor word line compensation full sequence program scheme

Non-volatile memory with multi-plane mixed sub-block programming

Non-volatile memory with bit line controlled multi-plane mixed sub-...

Non-volatile memory with program verify skip

Dynamic bit-scan techniques for memory device programming

Reprogramming memory cells to tighten threshold voltage distributio...

NAND string pre-charge during programming by injecting holes via su...

Method of reducing injection type of program disturb during program...

Method of reducing injection type of program disturb during program...

State adaptive predictive programming

Mapping for multi-state programming of memory devices

Memory device with discharge voltage pulse to reduce injection type...

Patents Applicationslast 30 patents

ANALOG BITSCAN TECHNIQUES IN A MEMORY DEVICE

PROGRAMMING TECHNIQUES THAT UTILIZE ANALOG BITSCAN IN A MEMORY DEVICE

PROGRAMMING TECHNIQUES THAT UTILIZE ANALOG BITSCAN IN A MEMORY DEVICE

ERASE TECHNIQUES USING ANALOG BITSCAN IN A MEMORY DEVICE

SYSTEMS AND METHODS TO AVOID OVER PROGRAMMING AT INFREQUENT SMART V...

LOWER VREAD FOR ERASED WORD LINES IN POST-WRITE DUMMY READS

NONVOLATILE MEMORY WITH ONGOING PROGRAM READ

WORD LINE-DEPENDENT WORD LINE AND CHANNEL READ SETUP TIME IN FIRST...

BINARY SEARCH BIT ERROR RATE ESTIMATION SCAN FOR NON-VOLATILE MEMOR...

PRECHARGE SCHEME DURING PROGRAMMING OF A MEMORY DEVICE

HYBRID SMART VERIFY FOR QLC/TLC DIE

TECHNIQUES FOR CHECKING VULNERABILITY TO CROSS-TEMPERATURE READ ERR...

MEMORY DEVICE WITH UNIQUE READ AND/OR PROGRAMMING PARAMETERS

RELIABILITY IMPROVEMENT THROUGH DELAY BETWEEN MULTI-STAGE PROGRAMMI...

TEMPERATURE-DEPENDENT WORD LINE VOLTAGE AND DISCHARGE RATE FOR REFR...

HYBRID PRECHARGE SELECT SCHEME TO SAVE PROGRAM ICC

READ PASS VOLTAGE DEPENDENT RECOVERY VOLTAGE SETTING BETWEEN PROGRA...

TIME-TAGGING READ LEVELS OF MULTIPLE WORDLINES FOR OPEN BLOCK DATA...

MIXING NORMAL AND REVERSE ORDER PROGRAMMING IN NAND MEMORY DEVICES

MEMORY PROGRAMMING TECHNIQUES TO REDUCE POWER CONSUMPTION

RELIABILITY COMPENSATION FOR UNEVEN NAND BLOCK DEGRADATION

DIGITAL TEMPERATURE COMPENSATION FILTERING

WORD LINE ZONED ADAPTIVE INITIAL PROGRAM VOLTAGE FOR NON-VOLATILE M...

COUNTERMEASURE MODES TO ADDRESS NEIGHBOR PLANE DISTURB CONDITION IN...

TRIGGERING NEXT STATE VERIFY IN PROGRAM LOOP FOR NONVOLATILE MEMORY

Mapping for Multi-State Programming of Memory Devices

PEAK CURRENT AND PROGRAM TIME OPTIMIZATION THROUGH LOOP DEPENDENT V...

COUPLING CAPACITANCE REDUCTION DURING PROGRAM VERIFY FOR PERFORMANC...

PROGRAMMING OF MEMORY CELLS USING A MEMORY STRING DEPENDENT PROGRAM...

MODIFIED VERIFY SCHEME FOR PROGRAMMING A MEMORY APPARATUS