Heon Yong CHANG

Person

Gyeonggi-do, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Phase change memory device having dielectric layer for isolating co...
- Patent number 8,486,752
- Issue date Jul 16, 2013
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device capable of increasing sensing margin and...
- Patent number 8,455,329
- Issue date Jun 4, 2013
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change RAM device and method for manufacturing the same
- Patent number 8,450,772
- Issue date May 28, 2013
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device to prevent thermal cross-talk and method...
- Patent number 8,422,283
- Issue date Apr 16, 2013
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device and method for manufacturing the same
- Patent number 8,416,616
- Issue date Apr 9, 2013
- SK Hynix Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device having a bent heater and method for manu...
- Patent number 8,399,285
- Issue date Mar 19, 2013
- Hynix Semiconductor Inc.
- Heon Yong Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device in which a phase change layer is stably...
- Patent number 8,293,650
- Issue date Oct 23, 2012
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device resistant to stack pattern collapse and...
- Patent number 8,258,002
- Issue date Sep 4, 2012
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device accounting for volume change of phase ch...
- Patent number 8,236,664
- Issue date Aug 7, 2012
- Hynix Semiconductor Inc.
- Heon Yong Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device resistant to stack pattern collapse and...
- Patent number 8,236,602
- Issue date Aug 7, 2012
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing phase change memory device
- Patent number 8,216,941
- Issue date Jul 10, 2012
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device accounting for volume change of phase ch...
- Patent number 8,093,632
- Issue date Jan 10, 2012
- Hynix Semiconductor Inc.
- Heon Yong Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device and method for manufacturing the same
- Patent number 8,071,968
- Issue date Dec 6, 2011
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device having heat sinks formed under heaters a...
- Patent number 8,053,750
- Issue date Nov 8, 2011
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device to prevent thermal cross-talk and method...
- Patent number 8,049,198
- Issue date Nov 1, 2011
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device and method for manufacturing the same
- Patent number 8,049,199
- Issue date Nov 1, 2011
- Hynix Semiconductor Inc.
- Yong Seok Eun
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change RAM device and method for fabricating the same
- Patent number 8,026,125
- Issue date Sep 27, 2011
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device having a bent heater and method for manu...
- Patent number 8,013,319
- Issue date Sep 6, 2011
- Hynix Semiconductor Inc.
- Heon Yong Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device capable of increasing sensing margin and...
- Patent number 7,928,422
- Issue date Apr 19, 2011
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device in which a phase change layer is stably...
- Patent number 7,910,908
- Issue date Mar 22, 2011
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device having a word line contact
- Patent number 7,897,959
- Issue date Mar 1, 2011
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device resistant to stack pattern collapse and...
- Patent number 7,884,344
- Issue date Feb 8, 2011
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device in which a distance between a lower elec...
- Patent number 7,880,159
- Issue date Feb 1, 2011
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device having dielectric layer for isolating co...
- Patent number 7,858,960
- Issue date Dec 28, 2010
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change RAM device
- Patent number 7,851,776
- Issue date Dec 14, 2010
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device having decreased contact resistance of h...
- Patent number 7,804,086
- Issue date Sep 28, 2010
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device and method for manufacturing the same
- Patent number 7,799,596
- Issue date Sep 21, 2010
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Phase change memory device preventing contact loss and method for m...
- Patent number 7,785,923
- Issue date Aug 31, 2010
- Hynix Semiconductor Inc.
- Heon Yong Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device having a uniform set and reset current
- Patent number 7,778,059
- Issue date Aug 17, 2010
- Hynix Semiconductor Inc.
- Heon Yong Chang
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase change memory device using PNP-BJT for preventing change in p...
- Patent number 7,705,341
- Issue date Apr 27, 2010
- Hynix Semiconductor Inc.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING STORAGE NODES AND METHOD OF MANUFACT...
- Publication number 20250056791
- Publication date Feb 13, 2025
- SK HYNIX INC.
- Heon Yong CHANG
Information Patent Application
METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20240381625
- Publication date Nov 14, 2024
- SK HYNIX INC.
- Heon Yong CHANG
Information Patent Application
SEMICONDUCTOR WAFER INCLUDING MONITORING PATTERN STRUCTURE WITH COV...
- Publication number 20240145399
- Publication date May 2, 2024
- SK HYNIX INC.
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER INCLUDING ALIGNMENT KEY PATTERN LAYER INCLUDING...
- Publication number 20240128198
- Publication date Apr 18, 2024
- SK HYNIX INC.
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER INCLUDING CHIP GUARD
- Publication number 20230387040
- Publication date Nov 30, 2023
- SK HYNIX INC.
- Heon Yong Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE ACCOUNTING FOR VOLUME CHANGE OF PHASE CH...
- Publication number 20120077324
- Publication date Mar 29, 2012
- Hynix Semiconductor Inc.
- Heon Yong CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICE TO PREVENT THERMAL CROSS-TALK AND METHOD...
- Publication number 20120009758
- Publication date Jan 12, 2012
- Hynix Semiconductor Inc.
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20110312149
- Publication date Dec 22, 2011
- Hynix Semiconductor Inc.
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE HAVING A BENT HEATER AND METHOD FOR MANU...
- Publication number 20110287602
- Publication date Nov 24, 2011
- Hynix Semiconductor Inc.
- Heon Yong CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICE CAPABLE OF INCREASING SENSING MARGIN AND...
- Publication number 20110165752
- Publication date Jul 7, 2011
- Hynix Semiconductor Inc.
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE IN WHICH A PHASE CHANGE LAYER IS STABLY...
- Publication number 20110136316
- Publication date Jun 9, 2011
- Hynix Semiconductor Inc.
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE HAVING DIELECTRIC LAYER FOR ISOLATING CO...
- Publication number 20110059591
- Publication date Mar 10, 2011
- Hynix Semiconductor Inc.
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE RAM DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20110053317
- Publication date Mar 3, 2011
- Hynix Semiconductor Inc.
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE RESISTANT TO STACK PATTERN COLLAPSE AND...
- Publication number 20100227440
- Publication date Sep 9, 2010
- Hynix Semiconductor Inc.
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE RESISTANT TO STACK PATTERN COLLAPSE AND...
- Publication number 20100227439
- Publication date Sep 9, 2010
- Hynix Semiconductor Inc.
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE RANDOM ACCESS MEMORY CAPABLE OF REDUCING THERMAL BUDGE...
- Publication number 20100163830
- Publication date Jul 1, 2010
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURE, METHOD OF MANUFACTURING THE SAME, PHASE CHANGEAB...
- Publication number 20100163834
- Publication date Jul 1, 2010
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE HAVING REDUCED PROGRAMMING CURRENT AND M...
- Publication number 20100117046
- Publication date May 13, 2010
- Heon Yong CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICE HAVING DIELECTRIC LAYER FOR ISOLATING CO...
- Publication number 20100090190
- Publication date Apr 15, 2010
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE HAVING HEAT SINKS FORMED UNDER HEATERS A...
- Publication number 20100059732
- Publication date Mar 11, 2010
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100059731
- Publication date Mar 11, 2010
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE IN WHICH A DISTANCE BETWEEN A LOWER ELEC...
- Publication number 20100001251
- Publication date Jan 7, 2010
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE HAVING A WORD LINE CONTACT AND METHOD FO...
- Publication number 20090302299
- Publication date Dec 10, 2009
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE HAVING DECREASED CONTACT RESISTANCE OF H...
- Publication number 20090302300
- Publication date Dec 10, 2009
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE RESISTANT TO STACK PATTERN COLLAPSE AND...
- Publication number 20090267043
- Publication date Oct 29, 2009
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE HAVING A BENT HEATER AND METHOD FOR MANU...
- Publication number 20090267044
- Publication date Oct 29, 2009
- Heon Yong CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR MANUFACTURING PHASE CHANGE MEMORY DEVICE
- Publication number 20090269928
- Publication date Oct 29, 2009
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE HAVING HEATERS AND METHOD FOR MANUFACTUR...
- Publication number 20090267045
- Publication date Oct 29, 2009
- Heon Yong CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE CHANGE MEMORY DEVICE ACCOUNTING FOR VOLUME CHANGE OF PHASE CH...
- Publication number 20090225589
- Publication date Sep 10, 2009
- Heon Yong CHANG
- G11 - INFORMATION STORAGE
Information Patent Application
PHASE CHANGE MEMORY DEVICE PREVENTING CONTACT LOSS AND METHOD FOR M...
- Publication number 20090200537
- Publication date Aug 13, 2009
- Heon Yong CHANG
- G11 - INFORMATION STORAGE

Heon Yong CHANG

Person

Patents Grantslast 30 patents

Phase change memory device having dielectric layer for isolating co...

Phase change memory device capable of increasing sensing margin and...

Phase change RAM device and method for manufacturing the same

Phase change memory device to prevent thermal cross-talk and method...

Phase change memory device and method for manufacturing the same

Phase change memory device having a bent heater and method for manu...

Phase change memory device in which a phase change layer is stably...

Phase change memory device resistant to stack pattern collapse and...

Phase change memory device accounting for volume change of phase ch...

Phase change memory device resistant to stack pattern collapse and...

Method for manufacturing phase change memory device

Phase change memory device accounting for volume change of phase ch...

Phase change memory device and method for manufacturing the same

Phase change memory device having heat sinks formed under heaters a...

Phase change memory device to prevent thermal cross-talk and method...

Phase change memory device and method for manufacturing the same

Phase change RAM device and method for fabricating the same

Phase change memory device having a bent heater and method for manu...

Phase change memory device capable of increasing sensing margin and...

Phase change memory device in which a phase change layer is stably...

Phase change memory device having a word line contact

Phase change memory device resistant to stack pattern collapse and...

Phase change memory device in which a distance between a lower elec...

Phase change memory device having dielectric layer for isolating co...

Phase change RAM device

Phase change memory device having decreased contact resistance of h...

Phase change memory device and method for manufacturing the same

Phase change memory device preventing contact loss and method for m...

Phase change memory device having a uniform set and reset current

Phase change memory device using PNP-BJT for preventing change in p...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE INCLUDING STORAGE NODES AND METHOD OF MANUFACT...

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR WAFER INCLUDING MONITORING PATTERN STRUCTURE WITH COV...

SEMICONDUCTOR WAFER INCLUDING ALIGNMENT KEY PATTERN LAYER INCLUDING...

SEMICONDUCTOR WAFER INCLUDING CHIP GUARD

PHASE CHANGE MEMORY DEVICE ACCOUNTING FOR VOLUME CHANGE OF PHASE CH...

PHASE CHANGE MEMORY DEVICE TO PREVENT THERMAL CROSS-TALK AND METHOD...

PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

PHASE CHANGE MEMORY DEVICE HAVING A BENT HEATER AND METHOD FOR MANU...

PHASE CHANGE MEMORY DEVICE CAPABLE OF INCREASING SENSING MARGIN AND...

PHASE CHANGE MEMORY DEVICE IN WHICH A PHASE CHANGE LAYER IS STABLY...

PHASE CHANGE MEMORY DEVICE HAVING DIELECTRIC LAYER FOR ISOLATING CO...

PHASE CHANGE RAM DEVICE AND METHOD FOR FABRICATING THE SAME

PHASE CHANGE MEMORY DEVICE RESISTANT TO STACK PATTERN COLLAPSE AND...

PHASE CHANGE MEMORY DEVICE RESISTANT TO STACK PATTERN COLLAPSE AND...

PHASE-CHANGE RANDOM ACCESS MEMORY CAPABLE OF REDUCING THERMAL BUDGE...

CONTACT STRUCTURE, METHOD OF MANUFACTURING THE SAME, PHASE CHANGEAB...

PHASE CHANGE MEMORY DEVICE HAVING REDUCED PROGRAMMING CURRENT AND M...

PHASE CHANGE MEMORY DEVICE HAVING DIELECTRIC LAYER FOR ISOLATING CO...

PHASE CHANGE MEMORY DEVICE HAVING HEAT SINKS FORMED UNDER HEATERS A...

PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

PHASE CHANGE MEMORY DEVICE IN WHICH A DISTANCE BETWEEN A LOWER ELEC...

PHASE CHANGE MEMORY DEVICE HAVING A WORD LINE CONTACT AND METHOD FO...

PHASE CHANGE MEMORY DEVICE HAVING DECREASED CONTACT RESISTANCE OF H...

PHASE CHANGE MEMORY DEVICE RESISTANT TO STACK PATTERN COLLAPSE AND...

PHASE CHANGE MEMORY DEVICE HAVING A BENT HEATER AND METHOD FOR MANU...

METHOD FOR MANUFACTURING PHASE CHANGE MEMORY DEVICE

PHASE CHANGE MEMORY DEVICE HAVING HEATERS AND METHOD FOR MANUFACTUR...

PHASE CHANGE MEMORY DEVICE ACCOUNTING FOR VOLUME CHANGE OF PHASE CH...

PHASE CHANGE MEMORY DEVICE PREVENTING CONTACT LOSS AND METHOD FOR M...