Herbert J. Gould

Person

Sherman Oaks, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Schottky diode with adjusted barrier height and process for its man...
- Patent number 6,184,564
- Issue date Feb 6, 2001
- International Rectifier Corp.
- Herbert J. Gould
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short channel IGBT with improved forward voltage drop and improved...
- Patent number 6,008,092
- Issue date Dec 28, 1999
- International Rectifier Corporation
- Herbert J. Gould
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor device having ultra deep increased concentration r...
- Patent number 5,904,510
- Issue date May 18, 1999
- International Rectifier Corp.
- Perry Merrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for manufacturing a schottky diode with enhanced barrier he...
- Patent number 5,888,891
- Issue date Mar 30, 1999
- International Rectifier Corporation
- Herbert J. Gould
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power transistor device having ultra deep increased concentration
- Patent number 5,661,314
- Issue date Aug 26, 1997
- International Rectifier Corporation
- Perry Merrill
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a back contact for semiconductor die
- Patent number 5,451,544
- Issue date Sep 19, 1995
- International Rectifier Corporation
- Herbert J. Gould
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solderable front metal contact for MOS devices
- Patent number 5,047,833
- Issue date Sep 10, 1991
- International Rectifier Corporation
- Herbert J. Gould
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallizing process and structure for semiconductor devices
- Patent number 4,965,173
- Issue date Oct 23, 1990
- International Rectifier Corporation
- Herbert J. Gould
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Platinum diffusion process
- Patent number 4,925,812
- Issue date May 15, 1990
- International Rectifier Corporation
- Herbert J. Gould
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky diode with titanium or like layer contacting the dielectri...
- Patent number 4,899,199
- Issue date Feb 6, 1990
- International Rectifier Corporation
- Herbert J. Gould
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky device and method of manufacture using palladium and plati...
- Patent number 4,408,216
- Issue date Oct 4, 1983
- International Rectifier Corporation
- Herbert J. Gould
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacture of a schottky using platinum encapsulated bet...
- Patent number 4,398,344
- Issue date Aug 16, 1983
- International Rectifier Corporation
- Herbert J. Gould
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Schottky device and method of manufacture using palladium and plati...
- Patent number 4,206,540
- Issue date Jun 10, 1980
- International Rectifier Corporation
- Herbert J. Gould
- H01 - BASIC ELECTRIC ELEMENTS

Herbert J. Gould

Person

Patents Grantslast 30 patents

Schottky diode with adjusted barrier height and process for its man...

Short channel IGBT with improved forward voltage drop and improved...

Power transistor device having ultra deep increased concentration r...

Process for manufacturing a schottky diode with enhanced barrier he...

Power transistor device having ultra deep increased concentration

Method of manufacturing a back contact for semiconductor die

Solderable front metal contact for MOS devices

Metallizing process and structure for semiconductor devices

Platinum diffusion process

Schottky diode with titanium or like layer contacting the dielectri...

Schottky device and method of manufacture using palladium and plati...

Method of manufacture of a schottky using platinum encapsulated bet...

Schottky device and method of manufacture using palladium and plati...