Hideaki Matsuhashi

Person

Saitama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing a capacitor with copper electrodes and diff...
- Patent number 6,921,689
- Issue date Jul 26, 2005
- Oki Electric Industry Co., Ltd.
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor having copper electrodes and diffusion barrier layers
- Patent number 6,856,501
- Issue date Feb 15, 2005
- Oki Electric Industry Co., Ltd.
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing field effect transistor
- Patent number 6,833,589
- Issue date Dec 21, 2004
- Oki Electric Industry Co., Ltd.
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device formed on an SOI structure with a stress-relie...
- Patent number 6,809,380
- Issue date Oct 26, 2004
- Oki Electric Industry Co., Ltd.
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Capacitor and a manufacturing process therefor
- Patent number 6,759,703
- Issue date Jul 6, 2004
- Oki Electric Industry Co., Ltd.
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET fabrication method
- Patent number 6,727,147
- Issue date Apr 27, 2004
- Oki Electric Industry Co., Ltd.
- Toshiyuki Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of a dual-gate CMOSFET
- Patent number 6,413,810
- Issue date Jul 2, 2002
- Oki Electric Industry Co., Ltd.
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of depositing a tungsten film
- Patent number 5,108,952
- Issue date Apr 28, 1992
- Oki Electric Industry Co., Ltd.
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Field effect transistor and semiconductor device
- Publication number 20070018277
- Publication date Jan 25, 2007
- Oki Electric Industry Co., Ltd.
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing a capacitor with copper electrodes and diff...
- Publication number 20040188748
- Publication date Sep 30, 2004
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Capacitor having copper electrodes and diffusion barrier layers
- Publication number 20040190220
- Publication date Sep 30, 2004
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20040075142
- Publication date Apr 22, 2004
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET FABRICATION METHOD
- Publication number 20030228735
- Publication date Dec 11, 2003
- Toshiyuki Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for manufacturing field effect transistor
- Publication number 20030049940
- Publication date Mar 13, 2003
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION METHOD OF A DUAL-GATE CMOSFET
- Publication number 20020061617
- Publication date May 23, 2002
- Hideaki Matsuhashi
- H01 - BASIC ELECTRIC ELEMENTS

Hideaki Matsuhashi

Person

Patents Grantslast 30 patents

Method of manufacturing a capacitor with copper electrodes and diff...

Capacitor having copper electrodes and diffusion barrier layers

Method for manufacturing field effect transistor

Semiconductor device formed on an SOI structure with a stress-relie...

Capacitor and a manufacturing process therefor

MOSFET fabrication method

Fabrication method of a dual-gate CMOSFET

Method of depositing a tungsten film

Patents Applicationslast 30 patents

Field effect transistor and semiconductor device

Method of manufacturing a capacitor with copper electrodes and diff...

Capacitor having copper electrodes and diffusion barrier layers

Semiconductor device

MOSFET FABRICATION METHOD

Method for manufacturing field effect transistor

FABRICATION METHOD OF A DUAL-GATE CMOSFET