Hideaki Onishi

Follow

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Sub-quarter micron silicon-on-insulator MOS field effect transistor...
- Patent number 6,160,293
- Issue date Dec 12, 2000
- NEC Corporation
- Hideaki Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating semiconductor device
- Patent number 6,150,202
- Issue date Nov 21, 2000
- NEC Corporation
- Kiyotaka Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device having isolation film...
- Patent number 5,981,359
- Issue date Nov 9, 1999
- NEC Corporation
- Hideaki Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an improved body contact hole structure
- Patent number 5,929,490
- Issue date Jul 27, 1999
- NEC Corporation
- Hideaki Onishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit device containing MOS protection c...
- Patent number 5,856,693
- Issue date Jan 5, 1999
- NEC Corporation
- Hideaki Onishi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor integrated circuit device and fabrication method
- Publication number 20010025997
- Publication date Oct 4, 2001
- NEC Corporation
- Hideaki Onishi
- H01 - BASIC ELECTRIC ELEMENTS