Hideaki Teranishi

Person

Hachioji City, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride based semiconductor device and manufacturing method...
- Patent number 11,257,676
- Issue date Feb 22, 2022
- Fuji Electric Co., Ltd.
- Hideaki Matsuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 11,062,907
- Issue date Jul 13, 2021
- Fuji Electric Co., Ltd.
- Shinya Takashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 10,115,587
- Issue date Oct 30, 2018
- Fuji Electric Co., Ltd.
- Haruo Nakazawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for manufacturing a silicon semiconductor substrate includin...
- Patent number 9,450,070
- Issue date Sep 20, 2016
- Fuji Electric Co., Ltd.
- Hideaki Teranishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing semiconductor device
- Patent number 9,431,270
- Issue date Aug 30, 2016
- Fuji Electric Co., Ltd.
- Haruo Nakazawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Reverse block-type insulated gate bipolar transistor manufacturing...
- Patent number 8,809,130
- Issue date Aug 19, 2014
- Fuji Electric Co., Ltd.
- Haruo Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reverse block-type insulated gate bipolar transistor manufacturing...
- Patent number 8,460,975
- Issue date Jun 11, 2013
- Fuji Electric Co., Ltd.
- Haruo Nakazawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SOI lateral semiconductor device and method of manufacturing the same
- Patent number 7,476,942
- Issue date Jan 13, 2009
- Fuji Electric Device Technology Co., Ltd.
- Yasumasa Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20190304788
- Publication date Oct 3, 2019
- Fuji Electric Co., Ltd.
- Shinya TAKASHIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD...
- Publication number 20190006184
- Publication date Jan 3, 2019
- Fuji Electric Co., Ltd.
- Hideaki MATSUYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20180308937
- Publication date Oct 25, 2018
- Fuji Electric Co., Ltd.
- Takayuki HIROSE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20150031175
- Publication date Jan 29, 2015
- Fuji Electric Co., Ltd.
- Hideaki TERANISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
- Publication number 20140377938
- Publication date Dec 25, 2014
- Haruo NAKAZAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
REVERSE BLOCK-TYPE INSULATED GATE BIPOLAR TRANSISTOR MANUFACTURING...
- Publication number 20130344663
- Publication date Dec 26, 2013
- Fuji Electric Co., Ltd.
- Haruo NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20130260540
- Publication date Oct 3, 2013
- Fuji Electric Co., Ltd.
- Haruo Nakazawa
- C30 - CRYSTAL GROWTH
Information Patent Application
REVERSE BLOCK-TYPE INSULATED GATE BIPOLAR TRANSISTOR MANUFACTURING...
- Publication number 20110207267
- Publication date Aug 25, 2011
- FUJI ELECTRIC HOLDINGS CO., LTD.
- Haruo NAKAZAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOI LATERAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20070235804
- Publication date Oct 11, 2007
- Fuji Electric Device Technology Co., LTD.
- Yasumasa Watanabe
- H01 - BASIC ELECTRIC ELEMENTS

Hideaki Teranishi

Person

Patents Grantslast 30 patents

Gallium nitride based semiconductor device and manufacturing method...

Nitride semiconductor device

Method of manufacturing semiconductor device

Method for manufacturing a silicon semiconductor substrate includin...

Method for producing semiconductor device

Reverse block-type insulated gate bipolar transistor manufacturing...

Reverse block-type insulated gate bipolar transistor manufacturing...

SOI lateral semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR DEVICE

GALLIUM NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

REVERSE BLOCK-TYPE INSULATED GATE BIPOLAR TRANSISTOR MANUFACTURING...

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

REVERSE BLOCK-TYPE INSULATED GATE BIPOLAR TRANSISTOR MANUFACTURING...

SOI LATERAL SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME