Hidekazu NOBUTO

Person

Hiroshima, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus including barrier materials within access line structures...
- Patent number 11,322,502
- Issue date May 3, 2022
- Micron Technology, Inc.
- Dojun Kim
- G11 - INFORMATION STORAGE
Information Patent Grant
Microelectronic devices with conductive contacts to silicide region...
- Patent number 11,043,414
- Issue date Jun 22, 2021
- Micron Technology, Inc.
- Kenichi Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming conductive material of a buried transistor gate l...
- Patent number 10,002,874
- Issue date Jun 19, 2018
- Micron Technologies, Inc.
- Hidekazu Nobuto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming conductive material of a buried transistor gate l...
- Patent number 9,768,177
- Issue date Sep 19, 2017
- Micron Technology, Inc.
- Hidekazu Nobuto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
APPARATUS COMPRISING A METAL PORTION IN THE TOP PORTION OF CAPACITO...
- Publication number 20240090197
- Publication date Mar 14, 2024
- Micron Technology, Inc.
- Harutaka Honda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR RELIABLY FORMING MICROELECTRONIC DEVICES WITH CONDUCTIV...
- Publication number 20210296167
- Publication date Sep 23, 2021
- Micron Technology, Inc.
- Kenichi Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS COMPRISING WORDLINES COMPRISING MULTIPLE METAL MATERIALS,...
- Publication number 20210126103
- Publication date Apr 29, 2021
- Micron Technology, Inc.
- Hidekazu Nobuto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR RELIABLY FORMING MICROELECTRONIC DEVICES WITH CONDUCTIV...
- Publication number 20210118676
- Publication date Apr 22, 2021
- Micron Technology, Inc.
- Kenichi Kusumoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS INCLUDING BARRIER MATERIALS WITHIN ACCESS LINE STRUCTURES...
- Publication number 20210013213
- Publication date Jan 14, 2021
- Micron Technology, Inc.
- Dojun Kim
- G11 - INFORMATION STORAGE
Information Patent Application
Method of Forming Conductive Material of a Buried Transistor Gate L...
- Publication number 20170317086
- Publication date Nov 2, 2017
- Micron Technology, Inc.
- Hidekazu NOBUTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method Of Forming Conductive Material Of A Buried Transistor Gate L...
- Publication number 20170040327
- Publication date Feb 9, 2017
- Micron Technology, Inc.
- Hidekazu NOBUTO
- H01 - BASIC ELECTRIC ELEMENTS

Hidekazu NOBUTO

Person

Patents Grantslast 30 patents

Apparatus including barrier materials within access line structures...

Microelectronic devices with conductive contacts to silicide region...

Method of forming conductive material of a buried transistor gate l...

Method of forming conductive material of a buried transistor gate l...

Patents Applicationslast 30 patents

APPARATUS COMPRISING A METAL PORTION IN THE TOP PORTION OF CAPACITO...

METHODS FOR RELIABLY FORMING MICROELECTRONIC DEVICES WITH CONDUCTIV...

APPARATUS COMPRISING WORDLINES COMPRISING MULTIPLE METAL MATERIALS,...

METHODS FOR RELIABLY FORMING MICROELECTRONIC DEVICES WITH CONDUCTIV...

APPARATUS INCLUDING BARRIER MATERIALS WITHIN ACCESS LINE STRUCTURES...

Method of Forming Conductive Material of a Buried Transistor Gate L...

Method Of Forming Conductive Material Of A Buried Transistor Gate L...