Hidekazu Sato

Person

Kasugai, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with inverted trapezoidal cross sectional prof...
- Patent number 8,809,919
- Issue date Aug 19, 2014
- Fujitsu Semiconductor Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer having W-shaped dummy metal filling section wit...
- Patent number 8,592,951
- Issue date Nov 26, 2013
- Fujitsu Semiconductor Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for evaluating impurity distribution under gate electrode wi...
- Patent number 8,163,572
- Issue date Apr 24, 2012
- Fujitsu Semiconductor Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 8,114,764
- Issue date Feb 14, 2012
- Fujitsu Semiconductor Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,915,125
- Issue date Mar 29, 2011
- Fujitsu Semiconductor Limited
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,851,890
- Issue date Dec 14, 2010
- Fujitsu Semiconductor Limited
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for evaluating impurity distribution under gate electrode wi...
- Patent number 7,691,649
- Issue date Apr 6, 2010
- Fujitsu Microelectronics Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and fabrication method thereof
- Patent number 7,642,192
- Issue date Jan 5, 2010
- Fujitsu Microelectronics Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterobipolar transistor and method of fabricating the same
- Patent number 7,358,546
- Issue date Apr 15, 2008
- Fujitsu Limited
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 7,262,483
- Issue date Aug 28, 2007
- Fujitsu Limited
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterobipolar transistor and method of fabricating the same
- Patent number 7,119,382
- Issue date Oct 10, 2006
- Fujitsu Limited
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor
- Patent number 6,903,439
- Issue date Jun 7, 2005
- Fujitsu Limited
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mixed crystal layer growing method and device, and semiconductor de...
- Patent number 6,806,158
- Issue date Oct 19, 2004
- Fujitsu Limited
- Takae Sukegawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR EVALUATING IMPURITY DISTRIBUTION UNDER GATE ELECTRODE WI...
- Publication number 20120181671
- Publication date Jul 19, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
- Publication number 20120104477
- Publication date May 3, 2012
- FUJITSU SEMICONDUCTOR LIMITED
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR EVALUATING IMPURITY DISTRIBUTION UNDER GATE ELECTRODE WI...
- Publication number 20100065947
- Publication date Mar 18, 2010
- Fujitsu Microelectronics Limited
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20090230469
- Publication date Sep 17, 2009
- Fujitsu Microelectronics Limited
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20080035955
- Publication date Feb 14, 2008
- FUJITSU LIMITED
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterobipolar transistor and method of fabricating the same
- Publication number 20070181910
- Publication date Aug 9, 2007
- FUJITSU LIMITED
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device, a manufacturing method thereof, and an evalua...
- Publication number 20070138561
- Publication date Jun 21, 2007
- FUJITSU LIMITED
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and fabrication method thereof
- Publication number 20060006477
- Publication date Jan 12, 2006
- FUJITSU LIMITED
- Kazuo Hashimi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20050186749
- Publication date Aug 25, 2005
- FUJITSU LIMITED
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20040056274
- Publication date Mar 25, 2004
- FUJITSU LIMITED
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterobipolar transistor and method of fabricating the same
- Publication number 20030201461
- Publication date Oct 30, 2003
- FUJITSU LIMITED
- Hidekazu Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mixed crystal layer growing method and device, and semiconductor de...
- Publication number 20030162370
- Publication date Aug 28, 2003
- FUJITSU LIMITED
- Takae Sukegawa
- C30 - CRYSTAL GROWTH

Hidekazu Sato

Person

Patents Grantslast 30 patents

Semiconductor device with inverted trapezoidal cross sectional prof...

Semiconductor wafer having W-shaped dummy metal filling section wit...

Method for evaluating impurity distribution under gate electrode wi...

Semiconductor device and fabrication method thereof

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing the same

Method for evaluating impurity distribution under gate electrode wi...

Semiconductor device and fabrication method thereof

Heterobipolar transistor and method of fabricating the same

Semiconductor device and method for manufacturing the same

Heterobipolar transistor and method of fabricating the same

Bipolar transistor

Mixed crystal layer growing method and device, and semiconductor de...

Patents Applicationslast 30 patents

METHOD FOR EVALUATING IMPURITY DISTRIBUTION UNDER GATE ELECTRODE WI...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF

METHOD FOR EVALUATING IMPURITY DISTRIBUTION UNDER GATE ELECTRODE WI...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Semiconductor device and method for manufacturing the same

Heterobipolar transistor and method of fabricating the same

Semiconductor device, a manufacturing method thereof, and an evalua...

Semiconductor device and fabrication method thereof

Semiconductor device and method for manufacturing the same

Semiconductor device and method for manufacturing the same

Heterobipolar transistor and method of fabricating the same

Mixed crystal layer growing method and device, and semiconductor de...