Hidekazu Tsuchida

Person

Yokosuka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Methods for manufacturing silicon carbide single crystal ingot and...
- Patent number 12,071,709
- Issue date Aug 27, 2024
- Denso Corporation
- Isaho Kamata
- C30 - CRYSTAL GROWTH
Information Patent Grant
Vertical MOSFET having trench gate structure containing silicon car...
- Patent number 11,948,976
- Issue date Apr 2, 2024
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor wafer evaluation apparatus and semiconductor wafer ma...
- Patent number 11,906,569
- Issue date Feb 20, 2024
- Showa Denko K.K.
- Koichi Murata
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide single crystal
- Patent number 11,846,040
- Issue date Dec 19, 2023
- Denso Corporation
- Yuichiro Tokuda
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC epitaxial wafer and method for producing SiC epitaxial wafer
- Patent number 11,600,538
- Issue date Mar 7, 2023
- Showa Denko K.K.
- Naoto Ishibashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 11,183,590
- Issue date Nov 23, 2021
- Fuji Electric Co., Ltd.
- Tae Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiC epitaxial wafer and method for producing same
- Patent number 11,107,892
- Issue date Aug 31, 2021
- Showa Denko K.K.
- Keisuke Fukada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film forming apparatus
- Patent number 10,896,831
- Issue date Jan 19, 2021
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor device and a method of manufacturing...
- Patent number 10,868,122
- Issue date Dec 15, 2020
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor substrate, method of manufacturing a...
- Patent number 10,748,763
- Issue date Aug 18, 2020
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method of manufacturing si...
- Patent number 10,665,681
- Issue date May 26, 2020
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Film forming apparatus, susceptor, and film forming method
- Patent number 10,584,417
- Issue date Mar 10, 2020
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide epitaxial wafer, silicon carbide insulated gate bip...
- Patent number 10,522,667
- Issue date Dec 31, 2019
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor substrate, method of manufacturing si...
- Patent number 10,453,924
- Issue date Oct 22, 2019
- Fuji Electric Co., Ltd.
- Takeshi Tawara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial wafer manufacturing method, epitaxial wafer, semiconducto...
- Patent number 10,354,867
- Issue date Jul 16, 2019
- Fuji Electric Co., Ltd.
- Hidekazu Tsuchida
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for manufacturing SiC epitaxial wafer by simultaneously util...
- Patent number 10,262,863
- Issue date Apr 16, 2019
- Showa Denko K.K.
- Keisuke Fukada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide single crystal, silicon carbide single crystal wafe...
- Patent number 10,181,517
- Issue date Jan 15, 2019
- Denso Corporation
- Takeshi Okamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide semiconductor film-forming apparatus and film-formi...
- Patent number 9,879,359
- Issue date Jan 30, 2018
- Denso Corporation
- Hiroaki Fujibayashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film-forming manufacturing apparatus and method
- Patent number 9,873,941
- Issue date Jan 23, 2018
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film-forming apparatus and film-forming method
- Patent number 9,598,792
- Issue date Mar 21, 2017
- Nuflare Technology, Inc.
- Kunihiko Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film formation apparatus and film formation method
- Patent number 9,570,337
- Issue date Feb 14, 2017
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Film formation apparatus and film formation method
- Patent number 9,518,322
- Issue date Dec 13, 2016
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor structure, semiconductor device, and method for produ...
- Patent number 9,496,345
- Issue date Nov 15, 2016
- National Institute of Advanced Industrial Science and Technology
- Kazutoshi Kojima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film-forming apparatus and film-forming method
- Patent number 9,273,412
- Issue date Mar 1, 2016
- Nuflare Technology, Inc.
- Kunihiko Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus and method for semiconductor device and cle...
- Patent number 8,815,711
- Issue date Aug 26, 2014
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for improving the quality of a SiC crystal
- Patent number 8,815,708
- Issue date Aug 26, 2014
- Central Research Institute Of Electric Power Industry
- Hidekazu Tsuchida
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial SiC single crystal substrate and method of manufacture of...
- Patent number 8,716,718
- Issue date May 6, 2014
- Showa Denko K.K.
- Kenji Momose
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for recovering an on-state forward voltage and, shrinking st...
- Patent number 8,455,269
- Issue date Jun 4, 2013
- Central Research Institute of Electric Power Industry
- Toshiyuki Miyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing silicon carbide semiconductor device
- Patent number 8,367,510
- Issue date Feb 5, 2013
- Central Research Institute Of Electric Power Industry
- Toshiyuki Miyanagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial SiC single crystal substrate and method of manufacture of...
- Patent number 8,293,623
- Issue date Oct 23, 2012
- Showa Denko K.K.
- Kenji Momose
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...
- Publication number 20240110309
- Publication date Apr 4, 2024
- Central Research Institute of Electric Power Industry
- Kiyoshi BETSUYAKU
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND ME...
- Publication number 20240110308
- Publication date Apr 4, 2024
- Central Research Institute of Electric Power Industry
- Kiyoshi BETSUYAKU
- C30 - CRYSTAL GROWTH
Information Patent Application
METHODS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT AND...
- Publication number 20230374699
- Publication date Nov 23, 2023
- DENSO CORPORATION
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...
- Publication number 20230279580
- Publication date Sep 7, 2023
- DENSO CORPORATION
- Akiyoshi HORIAI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE INGOT, METHOD FOR MANUFACTURING SILICON CARBIDE ING...
- Publication number 20230193510
- Publication date Jun 22, 2023
- MIRISE Technologies Corporation
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
VERTICAL MOSFET HAVING TRENCH GATE STRUCTURE CONTAINING SILICON CAR...
- Publication number 20220190114
- Publication date Jun 16, 2022
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SiC EPITAXIAL WAFER
- Publication number 20220173001
- Publication date Jun 2, 2022
- SHOWA DENKO K.K.
- Naoto ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WAFER EVALUATION APPARATUS AND SEMICONDUCTOR WAFER MA...
- Publication number 20220146564
- Publication date May 12, 2022
- SHOWA DENKO K.K.
- Koichi Murata
- G01 - MEASURING TESTING
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20220123112
- Publication date Apr 21, 2022
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...
- Publication number 20220112623
- Publication date Apr 14, 2022
- Central Research Institute of Electric Power Industry
- Norihiro HOSHINO
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL WAFER, AND METHODS FOR MANUFACTURING...
- Publication number 20210108334
- Publication date Apr 15, 2021
- DENSO CORPORATION
- Isaho KAMATA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20210102311
- Publication date Apr 8, 2021
- DENSO CORPORATION
- Yuichiro TOKUDA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20210074850
- Publication date Mar 11, 2021
- Fuji Electric Co., Ltd.
- Tae TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
- Publication number 20200083330
- Publication date Mar 12, 2020
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING...
- Publication number 20190393312
- Publication date Dec 26, 2019
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
- Publication number 20190376206
- Publication date Dec 12, 2019
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...
- Publication number 20190237547
- Publication date Aug 1, 2019
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING A...
- Publication number 20190103271
- Publication date Apr 4, 2019
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM FORMING APPARTUS
- Publication number 20180374721
- Publication date Dec 27, 2018
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SI...
- Publication number 20180323263
- Publication date Nov 8, 2018
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE EPITAXIAL WAFER, SILICON CARBIDE INSULATED GATE BIP...
- Publication number 20180315842
- Publication date Nov 1, 2018
- Fuji Electric Co., Ltd.
- Takeshi TAWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFE...
- Publication number 20180219069
- Publication date Aug 2, 2018
- Denso Corporation
- Takeshi OKAMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
EPITAXIAL WAFER MANUFACTURING METHOD, EPITAXIAL WAFER, SEMICONDUCTO...
- Publication number 20180012758
- Publication date Jan 11, 2018
- Fuji Electric Co., Ltd.
- Hidekazu TSUCHIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL GROW...
- Publication number 20170345658
- Publication date Nov 30, 2017
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR FILM-FORMING APPARATUS AND FILM-FORMI...
- Publication number 20160138190
- Publication date May 19, 2016
- Denso Corporation
- Hiroaki FUJIBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM FORMING APPARATUS, SUSCEPTOR, AND FILM FORMING METHOD
- Publication number 20160024652
- Publication date Jan 28, 2016
- NuFlare Technology, Inc.
- Hideki Ito
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING...
- Publication number 20150376813
- Publication date Dec 31, 2015
- CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY
- Hidekazu TSUCHIDA
- C30 - CRYSTAL GROWTH
Information Patent Application
FILM-FORMING MANUFACTURING APPARATUS AND METHOD
- Publication number 20150329967
- Publication date Nov 19, 2015
- NuFlare Technology, Inc.
- Hideki ITO
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUSCEPTOR PROCESSING METHOD AND SUSCEPTOR PROCESSING PLATE
- Publication number 20150299898
- Publication date Oct 22, 2015
- NuFlare Technology, Inc.
- Hideki ITO
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODU...
- Publication number 20150214306
- Publication date Jul 30, 2015
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Kazutoshi Kojima
- C30 - CRYSTAL GROWTH

Hidekazu Tsuchida

Person

Patents Grantslast 30 patents

Methods for manufacturing silicon carbide single crystal ingot and...

Vertical MOSFET having trench gate structure containing silicon car...

Semiconductor wafer evaluation apparatus and semiconductor wafer ma...

Silicon carbide single crystal

SiC epitaxial wafer and method for producing SiC epitaxial wafer

Semiconductor device and method of manufacturing semiconductor device

SiC epitaxial wafer and method for producing same

Film forming apparatus

Silicon carbide semiconductor device and a method of manufacturing...

Silicon carbide semiconductor substrate, method of manufacturing a...

Silicon carbide semiconductor device and method of manufacturing si...

Film forming apparatus, susceptor, and film forming method

Silicon carbide epitaxial wafer, silicon carbide insulated gate bip...

Silicon carbide semiconductor substrate, method of manufacturing si...

Epitaxial wafer manufacturing method, epitaxial wafer, semiconducto...

Method for manufacturing SiC epitaxial wafer by simultaneously util...

Silicon carbide single crystal, silicon carbide single crystal wafe...

Silicon carbide semiconductor film-forming apparatus and film-formi...

Film-forming manufacturing apparatus and method

Film-forming apparatus and film-forming method

Film formation apparatus and film formation method

Film formation apparatus and film formation method

Semiconductor structure, semiconductor device, and method for produ...

Film-forming apparatus and film-forming method

Manufacturing apparatus and method for semiconductor device and cle...

Method for improving the quality of a SiC crystal

Epitaxial SiC single crystal substrate and method of manufacture of...

Method for recovering an on-state forward voltage and, shrinking st...

Process for producing silicon carbide semiconductor device

Epitaxial SiC single crystal substrate and method of manufacture of...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL AND SILICON...

SILICON CARBIDE SINGLE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND ME...

METHODS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL INGOT AND...

SILICON CARBIDE SINGLE CRYSTAL AND MANUFACTURING METHOD OF SILICON...

SILICON CARBIDE INGOT, METHOD FOR MANUFACTURING SILICON CARBIDE ING...

VERTICAL MOSFET HAVING TRENCH GATE STRUCTURE CONTAINING SILICON CAR...

SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SiC EPITAXIAL WAFER

SEMICONDUCTOR WAFER EVALUATION APPARATUS AND SEMICONDUCTOR WAFER MA...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

METHOD AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SINGLE CRYST...

SILICON CARBIDE SINGLE CRYSTAL WAFER, AND METHODS FOR MANUFACTURING...

SILICON CARBIDE SINGLE CRYSTAL

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING...

SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SI...

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING A...

FILM FORMING APPARTUS

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SI...

SILICON CARBIDE EPITAXIAL WAFER, SILICON CARBIDE INSULATED GATE BIP...

SILICON CARBIDE SINGLE CRYSTAL, SILICON CARBIDE SINGLE CRYSTAL WAFE...

EPITAXIAL WAFER MANUFACTURING METHOD, EPITAXIAL WAFER, SEMICONDUCTO...

METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL GROW...

SILICON CARBIDE SEMICONDUCTOR FILM-FORMING APPARATUS AND FILM-FORMI...

FILM FORMING APPARATUS, SUSCEPTOR, AND FILM FORMING METHOD

METHOD FOR PRODUCING HEXAGONAL SINGLE CRYSTAL, METHOD FOR PRODUCING...

FILM-FORMING MANUFACTURING APPARATUS AND METHOD

SUSCEPTOR PROCESSING METHOD AND SUSCEPTOR PROCESSING PLATE

SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODU...