Hidekazu UMEDA

Person

Osaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,699,751
- Issue date Jul 11, 2023
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control system, switch system, power converter, method for controll...
- Patent number 11,595,038
- Issue date Feb 28, 2023
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Yusuke Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional switch and bidirectional switch device including the...
- Patent number 11,062,981
- Issue date Jul 13, 2021
- Panasonic Corporation
- Yusuke Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 10,868,167
- Issue date Dec 15, 2020
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional switch
- Patent number 10,811,525
- Issue date Oct 20, 2020
- Panasonic Corporation
- Yusuke Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 10,164,011
- Issue date Dec 25, 2018
- Panasonic Corporation
- Yusuke Kinoshita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,911,843
- Issue date Mar 6, 2018
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor apparatus
- Patent number 9,484,342
- Issue date Nov 1, 2016
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hiroyuki Handa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure
- Patent number 9,401,403
- Issue date Jul 26, 2016
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the device
- Patent number 9,231,059
- Issue date Jan 5, 2016
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Noboru Negoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the device
- Patent number 9,190,474
- Issue date Nov 17, 2015
- PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Noboru Negoro
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 8,884,332
- Issue date Nov 11, 2014
- Panasonic Corporation
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device
- Patent number 8,872,227
- Issue date Oct 28, 2014
- Panasonic Corporation
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including separated gate electrode and conduct...
- Patent number 8,692,292
- Issue date Apr 8, 2014
- Panasonic Corporation
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor and method of manufacturing the same
- Patent number 8,569,797
- Issue date Oct 29, 2013
- Panasonic Corporation
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device for reducing and/or preventing current collapse
- Patent number 8,390,029
- Issue date Mar 5, 2013
- Panasonic Corporation
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing group-III-element nitride single crystals and...
- Patent number 7,959,729
- Issue date Jun 14, 2011
- Osaka University
- Takatomo Sasaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for production of crystal of group III element nitride an...
- Patent number 7,754,012
- Issue date Jul 13, 2010
- Panasonic Corporation
- Hisashi Minemoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for production of crystal of group III element nitride an...
- Patent number 7,381,268
- Issue date Jun 3, 2008
- Matsushita Electric Industrial Co., Ltd.
- Hisashi Minemoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR MANUFACTURING COMPOSITE STRUCTURE AND METHOD FOR FABRICA...
- Publication number 20230260959
- Publication date Aug 17, 2023
- Panasonic Intellectual Property Management Co., Ltd.
- Tetsushi KONDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTROL SYSTEM, SWITCH SYSTEM, POWER CONVERTER, METHOD FOR CONTROLL...
- Publication number 20210265993
- Publication date Aug 26, 2021
- Panasonic Intellectual Property Management Co., Ltd.
- Yusuke KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL SWITCH AND BIDIRECTIONAL SWITCH DEVICE INCLUDING THE...
- Publication number 20210104453
- Publication date Apr 8, 2021
- PANASONIC CORPORATION
- Yusuke KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20210057564
- Publication date Feb 25, 2021
- Panasonic Intellectual Property Management Co., Ltd.
- HIDEKAZU UMEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BIDIRECTIONAL SWITCH
- Publication number 20190006499
- Publication date Jan 3, 2019
- PANASONIC CORPORATION
- Yusuke KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20180145166
- Publication date May 24, 2018
- Panasonic Intellectual Property Management Co., Ltd.
- HIDEKAZU UMEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20180012960
- Publication date Jan 11, 2018
- PANASONIC CORPORATION
- Yusuke KINOSHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR APPARATUS
- Publication number 20160064376
- Publication date Mar 3, 2016
- Panasonic Intellectual Property Management Co., Ltd.
- HIROYUKI HANDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150179741
- Publication date Jun 25, 2015
- Panasonic Intellectual Property Management Co., Ltd.
- HIDEKAZU UMEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR STRUCTURE
- Publication number 20150171173
- Publication date Jun 18, 2015
- Panasonic Intellectual Property Management Co., Ltd.
- HIDEKAZU UMEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE
- Publication number 20140097433
- Publication date Apr 10, 2014
- PANASONIC CORPORATION
- Noboru NEGORO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20130341682
- Publication date Dec 26, 2013
- PANASONIC CORPORATION
- Hidekazu UMEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR
- Publication number 20130171811
- Publication date Jul 4, 2013
- PANASONIC CORPORATION
- ASAMIRA SUZUKI
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE
- Publication number 20120153355
- Publication date Jun 21, 2012
- PANASONIC CORPORATION
- Hidekazu UMEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20120119261
- Publication date May 17, 2012
- PANASONIC CORPORATION
- Hidekazu UMEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
- Publication number 20110272740
- Publication date Nov 10, 2011
- PANASONIC CORPORATION
- Hidekazu UMEDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20110012173
- Publication date Jan 20, 2011
- Hidekazu Umeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Apparatus for production of crystal of group III element nitride an...
- Publication number 20080213158
- Publication date Sep 4, 2008
- Matsushita Electric Industrial Co., Ltd.
- Hisashi Minemoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Apparatus for production of crystal of group III element nitride an...
- Publication number 20070157876
- Publication date Jul 12, 2007
- Matsushita Electric Industrial Co., Ltd.
- Hisashi Minemoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for producing group III nitride single crystal and apparatus...
- Publication number 20060169197
- Publication date Aug 3, 2006
- Osaka Industrial Promotion Organization
- Takatamo Sasaki
- C30 - CRYSTAL GROWTH

Hidekazu UMEDA

Person

Patents Grantslast 30 patents

Semiconductor device

Control system, switch system, power converter, method for controll...

Bidirectional switch and bidirectional switch device including the...

Semiconductor device

Bidirectional switch

Nitride semiconductor device

Semiconductor device

Semiconductor apparatus

Nitride semiconductor structure

Semiconductor device and method of manufacturing the device

Semiconductor device and method of manufacturing the device

Nitride semiconductor device

Nitride semiconductor device

Semiconductor device including separated gate electrode and conduct...

Field effect transistor and method of manufacturing the same

Semiconductor device for reducing and/or preventing current collapse

Method for producing group-III-element nitride single crystals and...

Apparatus for production of crystal of group III element nitride an...

Apparatus for production of crystal of group III element nitride an...

Patents Applicationslast 30 patents

METHOD FOR MANUFACTURING COMPOSITE STRUCTURE AND METHOD FOR FABRICA...

CONTROL SYSTEM, SWITCH SYSTEM, POWER CONVERTER, METHOD FOR CONTROLL...

BIDIRECTIONAL SWITCH AND BIDIRECTIONAL SWITCH DEVICE INCLUDING THE...

SEMICONDUCTOR DEVICE

BIDIRECTIONAL SWITCH

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR APPARATUS

SEMICONDUCTOR DEVICE

NITRIDE SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE DEVICE

NITRIDE SEMICONDUCTOR DEVICE

METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR

NITRIDE SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

Apparatus for production of crystal of group III element nitride an...

Apparatus for production of crystal of group III element nitride an...

Method for producing group III nitride single crystal and apparatus...