Hideki Goto

Person

Tsuchiura City, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Delamination reduction between vias and conductive pads
- Patent number 7,394,159
- Issue date Jul 1, 2008
- Intel Corporation
- Hideki Goto
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Semiconductor light-emitting device
- Patent number 6,639,926
- Issue date Oct 28, 2003
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser diode
- Patent number 6,172,998
- Issue date Jan 9, 2001
- Mitsubishi Chemical Corporation
- Hideyoshi Horie
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor light-emitting device
- Patent number 6,023,483
- Issue date Feb 8, 2000
- Mitsubishi Chemical Corporation
- Kenji Shimoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a groove in a semiconductor laser diode and a sem...
- Patent number 5,920,767
- Issue date Jul 6, 1999
- Mitsubishi Chemical Company
- Hideyoshi Horie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a group II-VI compound semiconductor
- Patent number 5,868,834
- Issue date Feb 9, 1999
- Mitsubishi Kasei Corporation
- Kenji Shimoyama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device having a p-type ohmic electrode structure
- Patent number 5,644,165
- Issue date Jul 1, 1997
- Mitsubishi Kasei Corporation
- Hideki Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing compound semiconductor
- Patent number 5,622,559
- Issue date Apr 22, 1997
- Mitsubishi Chemical Corporation
- Hideki Goto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor laser diode
- Patent number 5,619,518
- Issue date Apr 8, 1997
- Mitsubishi Chemical Corporation
- Hideyoshi Horie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor with high crystal quality and luminous...
- Patent number 5,606,180
- Issue date Feb 25, 1997
- Mitsubishi Chemical Corporation
- Nobuyuki Hosoi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of forming a groove in a semiconductor laser diode and a sem...
- Patent number 5,566,198
- Issue date Oct 15, 1996
- Mitsubishi Chemical Corporation
- Hideyoshi Horie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of preparing compound semiconductor
- Patent number 5,400,740
- Issue date Mar 28, 1995
- Mitsubishi Chemical Corporation
- Hideki Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser element
- Patent number 5,355,384
- Issue date Oct 11, 1994
- Mitsubishi Kasei Corporation
- Yuichi Inoue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HEMT device with doped active layer
- Patent number 5,153,682
- Issue date Oct 6, 1992
- Mitsubishi Monsanto Chemical Company
- Hideki Goto
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD AND APPARATUS FOR FABRICATING FREESTANDING GaN SUBSTRATE
- Publication number 20130276697
- Publication date Oct 24, 2013
- A.E. TECH CORPORATION
- Hideki Goto
- C30 - CRYSTAL GROWTH
Information Patent Application
Delamination reduction between vias and conductive pads
- Publication number 20060186537
- Publication date Aug 24, 2006
- Intel Corporation
- Hideki Goto
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Application
Method and substrate to control flow of underfill
- Publication number 20050121310
- Publication date Jun 9, 2005
- Intel Corporation
- Atsushi Yamada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor light-emitting device
- Publication number 20040041162
- Publication date Mar 4, 2004
- MITSUBISHI CHEMICAL CORPORATION
- Kenji Shimoyama
- B82 - NANO-TECHNOLOGY

Hideki Goto

Person

Patents Grantslast 30 patents

Delamination reduction between vias and conductive pads

Semiconductor light-emitting device

Semiconductor laser diode

Semiconductor light-emitting device

Method of forming a groove in a semiconductor laser diode and a sem...

Method of manufacturing a group II-VI compound semiconductor

Semiconductor device having a p-type ohmic electrode structure

Method of preparing compound semiconductor

Semiconductor laser diode

III-V compound semiconductor with high crystal quality and luminous...

Method of forming a groove in a semiconductor laser diode and a sem...

Method of preparing compound semiconductor

Semiconductor laser element

HEMT device with doped active layer

Patents Applicationslast 30 patents

METHOD AND APPARATUS FOR FABRICATING FREESTANDING GaN SUBSTRATE

Delamination reduction between vias and conductive pads

Method and substrate to control flow of underfill

Semiconductor light-emitting device