Hideki Kurita

Person

Ibaraki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, and meth...
- Patent number 11,901,170
- Issue date Feb 13, 2024
- JX Metals Corporation
- Shunsuke Oka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, and meth...
- Patent number 11,894,225
- Issue date Feb 6, 2024
- JX Metals Corporation
- Shunsuke Oka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium phosphide substrate, semiconductor epitaxial wafer, and meth...
- Patent number 11,788,203
- Issue date Oct 17, 2023
- JX Metals Corporation
- Shunsuke Oka
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor wafer, and method for polishing semiconductor wafer
- Patent number 10,679,842
- Issue date Jun 9, 2020
- JX Nippon Mining & Metals Corporation
- Taku Yoshida
- B24 - GRINDING POLISHING
Information Patent Grant
CdTe semiconductor substrate for epitaxial growth and substrate con...
- Patent number 8,513,775
- Issue date Aug 20, 2013
- JX Nippon Mining & Metals Corporation
- Kenji Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor substrate for epitaxial growth and manufacturing meth...
- Patent number 7,875,957
- Issue date Jan 25, 2011
- Nippon Mining & Metals Co., Ltd.
- Kenji Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate for growing compound semiconductor and epitaxial growth m...
- Patent number 7,745,854
- Issue date Jun 29, 2010
- Nippon Mining & Metals Co., Ltd.
- Hideki Kurita
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Wafer storage container
- Patent number 7,510,082
- Issue date Mar 31, 2009
- Nippon Mining & Metals Co., Ltd.
- Masayuki Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth method and substrate for epitaxial growth
- Patent number 7,338,902
- Issue date Mar 4, 2008
- Nippon Mining & Metals Co., Ltd.
- Masashi Nakamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Chamfered semiconductor wafer and method of manufacturing the same
- Patent number 6,900,522
- Issue date May 31, 2005
- Nikko Materials Co., Ltd.
- Hideki Kurita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, AND METH...
- Publication number 20220316092
- Publication date Oct 6, 2022
- JX NIPPON MINING & METALS CORPORATION
- Shunsuke OKA
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, AND METH...
- Publication number 20220310381
- Publication date Sep 29, 2022
- JX NIPPON MINING & METALS CORPORATION
- Shunsuke OKA
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, AND METH...
- Publication number 20220310382
- Publication date Sep 29, 2022
- JX NIPPON MINING & METALS CORPORATION
- Shunsuke OKA
- C30 - CRYSTAL GROWTH
Information Patent Application
INDIUM PHOSPHIDE SUBSTRATE AND METHOD FOR PRODUCING INDIUM PHOSPHID...
- Publication number 20220199770
- Publication date Jun 23, 2022
- JX NIPPON MINING & METALS CORPORATION
- Kenya ITANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM PHOSPHIDE SUBSTRATE AND METHOD FOR PRODUCING INDIUM PHOSPHID...
- Publication number 20220189883
- Publication date Jun 16, 2022
- JX NIPPON MINING & METALS CORPORATION
- Kenya ITANI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR WAFER, AND METHOD FOR POLISHING SEMICONDUCTOR WAFER
- Publication number 20190189421
- Publication date Jun 20, 2019
- JX NIPPON MINING & METALS CORPORATION
- Taku YOSHIDA
- B24 - GRINDING POLISHING
Information Patent Application
SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWTH AND MANUFACTURING METH...
- Publication number 20090269271
- Publication date Oct 29, 2009
- Kenji Suzuki
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate for Growing Compound Semiconductor and Epitaxial Growth M...
- Publication number 20090025629
- Publication date Jan 29, 2009
- Hideki Kurita
- C30 - CRYSTAL GROWTH
Information Patent Application
Wafer Storage Container
- Publication number 20070221519
- Publication date Sep 27, 2007
- Masayuki Kimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Epitaxial growing method and substrate for epitaxial growth
- Publication number 20060012010
- Publication date Jan 19, 2006
- Masashi Nakamura
- C30 - CRYSTAL GROWTH
Information Patent Application
Semiconductor wafer and method for producing the same
- Publication number 20040113236
- Publication date Jun 17, 2004
- Hideki Kurita
- H01 - BASIC ELECTRIC ELEMENTS

Hideki Kurita

Person

Patents Grantslast 30 patents

Indium phosphide substrate, semiconductor epitaxial wafer, and meth...

Indium phosphide substrate, semiconductor epitaxial wafer, and meth...

Indium phosphide substrate, semiconductor epitaxial wafer, and meth...

Semiconductor wafer, and method for polishing semiconductor wafer

CdTe semiconductor substrate for epitaxial growth and substrate con...

Semiconductor substrate for epitaxial growth and manufacturing meth...

Substrate for growing compound semiconductor and epitaxial growth m...

Wafer storage container

Epitaxial growth method and substrate for epitaxial growth

Chamfered semiconductor wafer and method of manufacturing the same

Patents Applicationslast 30 patents

INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, AND METH...

INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, AND METH...

INDIUM PHOSPHIDE SUBSTRATE, SEMICONDUCTOR EPITAXIAL WAFER, AND METH...

INDIUM PHOSPHIDE SUBSTRATE AND METHOD FOR PRODUCING INDIUM PHOSPHID...

INDIUM PHOSPHIDE SUBSTRATE AND METHOD FOR PRODUCING INDIUM PHOSPHID...

SEMICONDUCTOR WAFER, AND METHOD FOR POLISHING SEMICONDUCTOR WAFER

SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWTH AND MANUFACTURING METH...

Substrate for Growing Compound Semiconductor and Epitaxial Growth M...

Wafer Storage Container

Epitaxial growing method and substrate for epitaxial growth

Semiconductor wafer and method for producing the same