Hideki Osada

Person

Itami-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Gallium nitride crystal substrate
- Patent number 11,421,344
- Issue date Aug 23, 2022
- Sumitomo Electric Industries, Ltd.
- Yusuke Yoshizumi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal substrates and group III nitride crystal
- Patent number 9,368,568
- Issue date Jun 14, 2016
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for producing group III nitride crystal
- Patent number 8,847,363
- Issue date Sep 30, 2014
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal substrate having a large area and a main surface...
- Patent number 8,823,142
- Issue date Sep 2, 2014
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal substrate and method of manufacturing thereof an...
- Patent number 8,598,685
- Issue date Dec 3, 2013
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride crystal and method for producing the same
- Patent number 8,524,575
- Issue date Sep 3, 2013
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Nitride semiconductor substrate
- Patent number 8,471,366
- Issue date Jun 25, 2013
- Sumitomo Electric Industries, Ltd.
- Hidenori Mikami
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gallium nitride-based semiconductor optical device, method of fabri...
- Patent number 8,228,963
- Issue date Jul 24, 2012
- Sumitomo Electric Industries, Ltd
- Yohei Enya
- B82 - NANO-TECHNOLOGY
Information Patent Grant
GaN substrate, substrate with epitaxial layer, semiconductor device...
- Patent number 7,816,238
- Issue date Oct 19, 2010
- Sumitomo Electric Industries, Ltd.
- Hideki Osada
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
GALLIUM NITRIDE CRYSTAL SUBSTRATE
- Publication number 20200255979
- Publication date Aug 13, 2020
- Sumitomo Electric Industries, Ltd.
- Yusuke YOSHIZUMI
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III Nitride Crystal Substrates and Group III Nitride Crystal
- Publication number 20140369920
- Publication date Dec 18, 2014
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN Single Crystal Substrate and Method of Manufacturing Thereof an...
- Publication number 20140061668
- Publication date Mar 6, 2014
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Group III Nitride Crystal
- Publication number 20130337632
- Publication date Dec 19, 2013
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20130134434
- Publication date May 30, 2013
- Sumitomo Electric Industries, Ltd.
- Hidenori Mikami
- B82 - NANO-TECHNOLOGY
Information Patent Application
Group III Nitride Crystal and Method for Producing the Same
- Publication number 20120329245
- Publication date Dec 27, 2012
- Sumitomo Electric Industries, Ltd.
- Koji Uematsu
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE
- Publication number 20120074403
- Publication date Mar 29, 2012
- Sumitomo Electric Industries, Ltd.
- Shinsuke Fujiwara
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of Manufacturing Nitride Semiconductor Substrate
- Publication number 20120034763
- Publication date Feb 9, 2012
- Sumitomo Electric Industries, Ltd.
- Hideki Osada
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF AN...
- Publication number 20110057197
- Publication date Mar 10, 2011
- Sumitomo Electric Industries, Ltd.
- Shinsuke FUJIWARA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE, METHOD OF FABRI...
- Publication number 20100220761
- Publication date Sep 2, 2010
- Sumitomo Electric Industries, Ltd.
- Yohei ENYA
- B82 - NANO-TECHNOLOGY
Information Patent Application
GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE...
- Publication number 20080308906
- Publication date Dec 18, 2008
- Sumitomo Electric Industries, Ltd.
- Hideki OSADA
- C30 - CRYSTAL GROWTH

Hideki Osada

Person

Patents Grantslast 30 patents

Gallium nitride crystal substrate

Group III nitride crystal substrates and group III nitride crystal

Method for producing group III nitride crystal

GaN single crystal substrate having a large area and a main surface...

GaN single crystal substrate and method of manufacturing thereof an...

Group III nitride crystal and method for producing the same

Nitride semiconductor substrate

Gallium nitride-based semiconductor optical device, method of fabri...

GaN substrate, substrate with epitaxial layer, semiconductor device...

Patents Applicationslast 30 patents

GALLIUM NITRIDE CRYSTAL SUBSTRATE

Group III Nitride Crystal Substrates and Group III Nitride Crystal

GaN Single Crystal Substrate and Method of Manufacturing Thereof an...

Method for Producing Group III Nitride Crystal

NITRIDE SEMICONDUCTOR SUBSTRATE

Group III Nitride Crystal and Method for Producing the Same

METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATE

Method of Manufacturing Nitride Semiconductor Substrate

GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MANUFACTURING THEREOF AN...

GALLIUM NITRIDE-BASED SEMICONDUCTOR OPTICAL DEVICE, METHOD OF FABRI...

GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE...