Hidemi Ishiuchi

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Yokohama-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with a cavity therein and a method of manufact...
- Patent number 7,145,215
- Issue date Dec 5, 2006
- Kabushiki Kaisha Toshiba
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a cavity therein and a method of manufact...
- Patent number 7,009,273
- Issue date Mar 7, 2006
- Kabushiki Kaisha Toshiba
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked type semiconductor device
- Patent number 6,717,251
- Issue date Apr 6, 2004
- Kabushiki Kaisha Toshiba
- Mie Matsuo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench dual-gate MOSFET
- Patent number 4,975,754
- Issue date Dec 4, 1990
- Kabushiki Kaisha Toshiba
- Hidemi Ishiuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a memory cell for a dynamic type random acc...
- Patent number 4,731,342
- Issue date Mar 15, 1988
- Kabushiki Kaisha Toshiba
- Hidemi Ishiuchi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device with a cavity therein and a method of manufact...
- Publication number 20060157789
- Publication date Jul 20, 2006
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device with a cavity therein and a method of manufact...
- Publication number 20040129998
- Publication date Jul 8, 2004
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Stacked type semiconductor device
- Publication number 20020036338
- Publication date Mar 28, 2002
- Kabushiki Kaisha Toshiba
- Mie Matsuo
- H01 - BASIC ELECTRIC ELEMENTS