Hidemi Takeishi

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Fukuoka, JP

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Patents Grantslast 30 patents

Information Patent Grant
P-type nitride semiconductor and method of manufacturing the same
- Patent number 7,056,755
- Issue date Jun 6, 2006
- Matsushita Electric Industrial Co., Ltd.
- Hidenori Kamei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Apparatus and method for forming semiconductor thin layer
- Patent number 6,090,211
- Issue date Jul 18, 2000
- Matsushita Electric Industrial Co., Ltd.
- Hidenori Kamei
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride compound-based semiconductor light emitting device...
- Patent number 6,051,847
- Issue date Apr 18, 2000
- Matsushita Electric Industrial Co., Ltd.
- Yasunari Oku
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
P-type nitride semiconductor and method of manufacturing the same
- Publication number 20060183260
- Publication date Aug 17, 2006
- Matsushita Electric Industrial Co., Ltd.
- Hidenori Kamei
- H01 - BASIC ELECTRIC ELEMENTS