Hidemitsu Sakamoto

Person

Shizuoka-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus for producing SiC single crystal and method for producing...
- Patent number 10,100,432
- Issue date Oct 16, 2018
- Toyota Jidosha Kabushiki Kaisha
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production method of SiC single crystal
- Patent number 9,920,449
- Issue date Mar 20, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing SiC single crystals and method of producing...
- Patent number 9,896,778
- Issue date Feb 20, 2018
- Toyota Jidosha Kabushiki Kaisha
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Grant
Apparatus for producing SiC single crystal by solution growth metho...
- Patent number 9,783,911
- Issue date Oct 10, 2017
- Toyota Jidosha Kabushiki Kaisha
- Nobuyoshi Yashiro
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production apparatus and production method of SiC single crystal
- Patent number 9,732,441
- Issue date Aug 15, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing a SiC single crystal in the presence of a magn...
- Patent number 9,708,734
- Issue date Jul 18, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hironori Daikoku
- C30 - CRYSTAL GROWTH
Information Patent Grant
Production apparatus of SiC single crystal by solution growth metho...
- Patent number 9,702,056
- Issue date Jul 11, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus of SiC single crystal and method for manufa...
- Patent number 9,617,655
- Issue date Apr 11, 2017
- Nippon Steel & Sumitomo Metal Corporation
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC single crystal ingot and production method therefor
- Patent number 9,523,156
- Issue date Dec 20, 2016
- Toyota Jidosha Kabushiki Kaisha
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Grant
Manufacturing apparatus of SiC single crystal, jig for use in the m...
- Patent number 9,388,508
- Issue date Jul 12, 2016
- Toyota Jidosha Kabushiki Kaisha
- Kazuhito Kamei
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus and method for production of SiC single crystal
- Patent number 9,322,112
- Issue date Apr 26, 2016
- Toyota Jidosha Kabushiki Kaisha
- Tomokazu Ishii
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of producing SiC single crystal
- Patent number 9,080,254
- Issue date Jul 14, 2015
- Toyota Jidosha Kabushiki Kaisha
- Hidemitsu Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Seed crystal axis for solution growth of single crystal
- Patent number 8,328,937
- Issue date Dec 11, 2012
- Toyota Jidosha Kabushiki Kaisha
- Hidemitsu Sakamoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method of manufacturing a silicon carbide single crystal
- Patent number 8,118,933
- Issue date Feb 21, 2012
- Toyota Jidosha Kabushiki Kaisha
- Hidemitsu Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing silicon carbide single crystal
- Patent number 8,052,793
- Issue date Nov 8, 2011
- Toyota Jidosha Kabushiki Kaisha
- Hidemitsu Sakamoto
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
PRODUCTION METHOD OF SiC SINGLE CRYSTAL
- Publication number 20170009373
- Publication date Jan 12, 2017
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SiC SINGLE CRYSTALS AND METHOD OF PRODUCING...
- Publication number 20160122900
- Publication date May 5, 2016
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Kazuhito KAMEI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SiC SINGLE CRYSTAL
- Publication number 20160053402
- Publication date Feb 25, 2016
- Kazuhiko KUSUNOKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20150299900
- Publication date Oct 22, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hironori DAIKOKU
- C30 - CRYSTAL GROWTH
Information Patent Application
SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...
- Publication number 20150225872
- Publication date Aug 13, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC...
- Publication number 20150225871
- Publication date Aug 13, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...
- Publication number 20150191848
- Publication date Jul 9, 2015
- Toyota Jidosha Kabushiki Kaisha
- Nobuyoshi Yashiro
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR
- Publication number 20150167196
- Publication date Jun 18, 2015
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Motohisa Kado
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING...
- Publication number 20150152569
- Publication date Jun 4, 2015
- NIPPON STEEL & SUMITOMO METAL CORPORATION
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION APPARATUS AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL
- Publication number 20140116324
- Publication date May 1, 2014
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhiko Kusunoki
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL, JIG FOR USE IN THE M...
- Publication number 20130305981
- Publication date Nov 21, 2013
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Kazuhito Kamei
- C30 - CRYSTAL GROWTH
Information Patent Application
MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFA...
- Publication number 20130284083
- Publication date Oct 31, 2013
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Nobuhiro Okada
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR PRODUCTION OF SiC SINGLE CRYSTAL
- Publication number 20120160153
- Publication date Jun 28, 2012
- Tomokazu ISHII
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED CRYSTAL AXIS FOR SOLUTION GROWTH OF SINGLE CRYSTAL
- Publication number 20120103251
- Publication date May 3, 2012
- Hidemitsu Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCING SIC SINGLE CRYSTAL
- Publication number 20110315073
- Publication date Dec 29, 2011
- Hidemitsu Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL
- Publication number 20100083896
- Publication date Apr 8, 2010
- Toyota Jidosha Kabushiki Kaisha
- Hidemitsu Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF MANUFACTURING A SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20090178610
- Publication date Jul 16, 2009
- Hidemitsu Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Producing Silicon Carbide Single Crystal
- Publication number 20090101062
- Publication date Apr 23, 2009
- TOYOTA JIDOSHA KABUSHIKI KAISHA
- Hidemitsu Sakamoto
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF PRODUCTION OF SiC SINGLE CRYSTAL
- Publication number 20090084309
- Publication date Apr 2, 2009
- Hidemitsu Sakamoto
- C30 - CRYSTAL GROWTH

Hidemitsu Sakamoto

Person

Patents Grantslast 30 patents

Apparatus for producing SiC single crystal and method for producing...

Production method of SiC single crystal

Apparatus for producing SiC single crystals and method of producing...

Apparatus for producing SiC single crystal by solution growth metho...

Production apparatus and production method of SiC single crystal

Method for producing a SiC single crystal in the presence of a magn...

Production apparatus of SiC single crystal by solution growth metho...

Manufacturing apparatus of SiC single crystal and method for manufa...

SiC single crystal ingot and production method therefor

Manufacturing apparatus of SiC single crystal, jig for use in the m...

Apparatus and method for production of SiC single crystal

Method of producing SiC single crystal

Seed crystal axis for solution growth of single crystal

Method of manufacturing a silicon carbide single crystal

Method for producing silicon carbide single crystal

Patents Applicationslast 30 patents

PRODUCTION METHOD OF SiC SINGLE CRYSTAL

APPARATUS FOR PRODUCING SiC SINGLE CRYSTALS AND METHOD OF PRODUCING...

METHOD FOR PRODUCING SiC SINGLE CRYSTAL

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

SINGLE CRYSTAL PRODUCTION APPARATUS, CRUCIBLE FOR USE THEREIN, AND...

SiC SINGLE CRYSTAL PRODUCTION APPARATUS AND METHOD OF PRODUCING SiC...

APPARATUS FOR PRODUCING SIC SINGLE CRYSTAL BY SOLUTION GROWTH METHO...

SIC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR

APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING...

PRODUCTION APPARATUS AND PRODUCTION METHOD OF SiC SINGLE CRYSTAL

MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL, JIG FOR USE IN THE M...

MANUFACTURING APPARATUS OF SiC SINGLE CRYSTAL AND METHOD FOR MANUFA...

APPARATUS AND METHOD FOR PRODUCTION OF SiC SINGLE CRYSTAL

SEED CRYSTAL AXIS FOR SOLUTION GROWTH OF SINGLE CRYSTAL

METHOD OF PRODUCING SIC SINGLE CRYSTAL

METHOD FOR PRODUCING SIC SINGLE CRYSTAL

METHOD OF MANUFACTURING A SILICON CARBIDE SINGLE CRYSTAL

Method for Producing Silicon Carbide Single Crystal

METHOD OF PRODUCTION OF SiC SINGLE CRYSTAL