Hidemoto Tomita

Person

Toyota, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 10,971,619
- Issue date Apr 6, 2021
- Denso Corporation
- Hidemoto Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of the same
- Patent number 10,283,626
- Issue date May 7, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto Tomita
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor device and manufacturing method for the same
- Patent number 10,002,863
- Issue date Jun 19, 2018
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,773,900
- Issue date Sep 26, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor device and method of manufacturing the same
- Patent number 9,666,580
- Issue date May 30, 2017
- Toyota Jidosha Kabushiki Kaisha
- Yoshitaka Nagasato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 9,536,873
- Issue date Jan 3, 2017
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Masakazu Kanechika
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 9,484,340
- Issue date Nov 1, 2016
- Kabushiki Kaisha Toyota Chuo Kenkyusho
- Masakazu Kanechika
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Switching device
- Patent number 9,401,421
- Issue date Jul 26, 2016
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto Tomita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20220271144
- Publication date Aug 25, 2022
- DENSO CORPORATION
- Takashi OKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220270882
- Publication date Aug 25, 2022
- DENSO CORPORATION
- Hidemoto TOMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20220238703
- Publication date Jul 28, 2022
- DENSO CORPORATION
- Hirofumi KIDA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20200052104
- Publication date Feb 13, 2020
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING NITRIDE...
- Publication number 20190109224
- Publication date Apr 11, 2019
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20180090600
- Publication date Mar 29, 2018
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto TOMITA
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20170154885
- Publication date Jun 1, 2017
- Toyota Jidosha Kabushiki Kaisha
- Yoshitaka NAGASATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170098701
- Publication date Apr 6, 2017
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto TOMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
- Publication number 20160343702
- Publication date Nov 24, 2016
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto TOMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160204254
- Publication date Jul 14, 2016
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto TOMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
- Publication number 20160197174
- Publication date Jul 7, 2016
- Toyota Jidosha Kabushiki Kaisha
- Masakazu KANECHIKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20160035719
- Publication date Feb 4, 2016
- KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO
- Masakazu KANECHIKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCHOTTKY BARRIER DIODE FORMED WITH NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20160013286
- Publication date Jan 14, 2016
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto TOMITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SWITCHING DEVICE
- Publication number 20150295073
- Publication date Oct 15, 2015
- Toyota Jidosha Kabushiki Kaisha
- Hidemoto TOMITA
- H01 - BASIC ELECTRIC ELEMENTS

Hidemoto Tomita

Person

Patents Grantslast 30 patents

Semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method of the same

Semiconductor device and manufacturing method for the same

Semiconductor device

Nitride semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Switching device

Patents Applicationslast 30 patents

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SWITCHING DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

NITRIDE SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING NITRIDE...

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SCHOTTKY BARRIER DIODE FORMED WITH NITRIDE SEMICONDUCTOR SUBSTRATE

SWITCHING DEVICE