HIDENOBU FUKUTOME

Person

SEONGNAM-SI, KR

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with impurity-doped region and method of fabri...
- Patent number 10,332,878
- Issue date Jun 25, 2019
- Samsung Electronics Co., Ltd.
- Hidenobu Fukutome
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 9,842,909
- Issue date Dec 12, 2017
- Samsung Electronics Co. Ltd.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with impurity-doped region and method of fabri...
- Patent number 9,559,101
- Issue date Jan 31, 2017
- Samsung Electronics Co., Ltd.
- Hidenobu Fukutome
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device and fabricating method thereof
- Patent number 9,276,116
- Issue date Mar 1, 2016
- Samsung Elecronics Co., Ltd.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having embedded strain-inducing pattern
- Patent number 9,240,481
- Issue date Jan 19, 2016
- Samsung Electronics Co., Ltd.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device having embedded strain-induc...
- Patent number 8,962,435
- Issue date Feb 24, 2015
- Samsung Electronics Co., Ltd.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having embedded strain-inducing pattern and me...
- Patent number 8,884,298
- Issue date Nov 11, 2014
- Samsung Electronics Co., Ltd.
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240203831
- Publication date Jun 20, 2024
- Samsung Electronics Co., Ltd.
- Anthony Dongick LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20190035788
- Publication date Jan 31, 2019
- Samsung Electronics Co., Ltd.
- MUN-HYEON KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
- Publication number 20170162574
- Publication date Jun 8, 2017
- Samsung Electronics Co., Ltd.
- MUN-HYEON KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH IMPURITY-DOPED REGION AND METHOD OF FABRI...
- Publication number 20170117278
- Publication date Apr 27, 2017
- Samsung Electronics Co., Ltd.
- Hidenobu Fukutome
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Fabricating Method Thereof
- Publication number 20160155816
- Publication date Jun 2, 2016
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING EMBEDDED STRAIN-INDUCING PATTERN
- Publication number 20150123176
- Publication date May 7, 2015
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING EMBEDDED STRAIN-INDUC...
- Publication number 20150024565
- Publication date Jan 22, 2015
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device and Fabricating Method Thereof
- Publication number 20140203370
- Publication date Jul 24, 2014
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING EMBEDDED STRAIN-INDUCING PATTERN AND ME...
- Publication number 20130341631
- Publication date Dec 26, 2013
- Shigenobu Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20130343121
- Publication date Dec 26, 2013
- Samsung Electronics Co., Ltd.
- Hidenobu Fukutome
- G11 - INFORMATION STORAGE

HIDENOBU FUKUTOME

Person

Patents Grantslast 30 patents

Semiconductor device with impurity-doped region and method of fabri...

Semiconductor device and fabricating method thereof

Semiconductor device with impurity-doped region and method of fabri...

Semiconductor device and fabricating method thereof

Semiconductor device having embedded strain-inducing pattern

Method of forming semiconductor device having embedded strain-induc...

Semiconductor device having embedded strain-inducing pattern and me...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH IMPURITY-DOPED REGION AND METHOD OF FABRI...

Semiconductor Device and Fabricating Method Thereof

SEMICONDUCTOR DEVICE HAVING EMBEDDED STRAIN-INDUCING PATTERN

METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING EMBEDDED STRAIN-INDUC...

Semiconductor Device and Fabricating Method Thereof

SEMICONDUCTOR DEVICE HAVING EMBEDDED STRAIN-INDUCING PATTERN AND ME...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME