Hidenori Shimawaki

Person

Kanagawa, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Power amplifier, and method of controlling power amplifier
- Patent number 8,326,244
- Issue date Dec 4, 2012
- NEC Corporation
- Kenichi Maruhashi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Radio communication device
- Patent number 7,924,799
- Issue date Apr 12, 2011
- NEC Corporation
- Kenichi Maruhashi
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Field effect transistor
- Patent number 7,863,648
- Issue date Jan 4, 2011
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor
- Patent number 7,800,131
- Issue date Sep 21, 2010
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,038,244
- Issue date May 2, 2006
- NEC Compound Semiconductor Devices, Ltd.
- Takashi Ishigaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and method of producing the same
- Patent number 6,924,201
- Issue date Aug 2, 2005
- NEC Compound Semiconductor Devices, Ltd.
- Masahiro Tanomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor and semiconductor integrated circ...
- Patent number 6,881,988
- Issue date Apr 19, 2005
- NEC Compound Semiconductor Devices, Ltd.
- Takaki Niwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of producing the same
- Patent number 6,661,038
- Issue date Dec 9, 2003
- NEC Compound Semiconductor Devices, Ltd.
- Kouji Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor device having diode connected between emitte...
- Patent number 6,525,388
- Issue date Feb 25, 2003
- NEC Compound Semiconductor Devices, Ltd.
- Hidenori Shimawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor including a compound semiconductor
- Patent number 5,903,018
- Issue date May 11, 1999
- NEC Corporation
- Hidenori Shimawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor having base structure for improvi...
- Patent number 5,321,302
- Issue date Jun 14, 1994
- NEC Corporation
- Hidenori Shimawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a heterojunction bipolar transistor
- Patent number 5,296,389
- Issue date Mar 22, 1994
- NEC Corporation
- Hidenori Shimawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction bipolar transistor with improved base layer
- Patent number 5,160,994
- Issue date Nov 3, 1992
- NEC Corporation
- Hidenori Shimawaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of selective epitaxial growth for compound semiconductors
- Patent number 4,902,643
- Issue date Feb 20, 1990
- NEC Corporation
- Hidenori Shimawaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER AMPLIFIER, AND METHOD OF CONTROLLING POWER AMPLIFIER
- Publication number 20100225399
- Publication date Sep 9, 2010
- NEC Corporation
- Kenichi Maruhashi
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Field effect transistor
- Publication number 20090230429
- Publication date Sep 17, 2009
- NEC Corporation
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor
- Publication number 20090230430
- Publication date Sep 17, 2009
- NEC CORPRORATION
- Hironobu Miyamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radio communication device
- Publication number 20070133493
- Publication date Jun 14, 2007
- NEC Corporation
- Kenichi Maruhashi
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20050110045
- Publication date May 26, 2005
- NEC Compound Semiconductor Devices, Ltd.
- Takashi Ishigaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor and method of producing the same
- Publication number 20030218187
- Publication date Nov 27, 2003
- Masahiro Tanomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor and semiconductor integrated circ...
- Publication number 20030136956
- Publication date Jul 24, 2003
- NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
- Takaki Niwa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound semiconductor device having heterojunction bipolar transis...
- Publication number 20020195620
- Publication date Dec 26, 2002
- NEC COMPOUND SEMICONDUCTOR DEVICES, LTD.
- Masahiro Tanomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Compound semiconductor device having heterojunction bipolar transis...
- Publication number 20020139997
- Publication date Oct 3, 2002
- Masahiro Tanomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of producing the same
- Publication number 20020121675
- Publication date Sep 5, 2002
- Kouji Azuma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor and method of producing the same
- Publication number 20020066909
- Publication date Jun 6, 2002
- NEC Corporation
- Masahiro Tanomura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction bipolar transistor composed of emitter layer which i...
- Publication number 20010048120
- Publication date Dec 6, 2001
- NEC Corporation
- Hidenori Shimawaki
- H01 - BASIC ELECTRIC ELEMENTS

Hidenori Shimawaki

Person

Patents Grantslast 30 patents

Power amplifier, and method of controlling power amplifier

Radio communication device

Field effect transistor

Field effect transistor

Semiconductor device and method of manufacturing the same

Heterojunction bipolar transistor and method of producing the same

Heterojunction bipolar transistor and semiconductor integrated circ...

Semiconductor device and method of producing the same

Compound semiconductor device having diode connected between emitte...

Bipolar transistor including a compound semiconductor

Heterojunction bipolar transistor having base structure for improvi...

Method of fabricating a heterojunction bipolar transistor

Heterojunction bipolar transistor with improved base layer

Method of selective epitaxial growth for compound semiconductors

Patents Applicationslast 30 patents

POWER AMPLIFIER, AND METHOD OF CONTROLLING POWER AMPLIFIER

Field effect transistor

Field effect transistor

Radio communication device

Semiconductor device and method of manufacturing the same

Heterojunction bipolar transistor and method of producing the same

Heterojunction bipolar transistor and semiconductor integrated circ...

Compound semiconductor device having heterojunction bipolar transis...

Compound semiconductor device having heterojunction bipolar transis...

Semiconductor device and method of producing the same

Heterojunction bipolar transistor and method of producing the same

Heterojunction bipolar transistor composed of emitter layer which i...