Hideo Fujisawa

Person

Ushiku, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 12,107,129
- Issue date Oct 1, 2024
- Mitsubishi Chemical Corporation
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 11,810,782
- Issue date Nov 7, 2023
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
- Patent number 11,670,687
- Issue date Jun 6, 2023
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,664,428
- Issue date May 30, 2023
- Mitsubishi Chemical Corporation
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,591,715
- Issue date Feb 28, 2023
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing GaN crystal and c-plane GaN substrate
- Patent number 11,404,268
- Issue date Aug 2, 2022
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 11,162,190
- Issue date Nov 2, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,038,024
- Issue date Jun 15, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 11,031,475
- Issue date Jun 8, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,001,940
- Issue date May 11, 2021
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal of nitride of group-13 metal on periodic table, and method...
- Patent number 10,995,421
- Issue date May 4, 2021
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 10,903,072
- Issue date Jan 26, 2021
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 10,796,904
- Issue date Oct 6, 2020
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
- Patent number 10,734,485
- Issue date Aug 4, 2020
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing GaN crystal and C-plane GaN substrate
- Patent number 10,720,326
- Issue date Jul 21, 2020
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN substrate, method for producing GaN substrate, method for produ...
- Patent number 10,655,244
- Issue date May 19, 2020
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 10,526,726
- Issue date Jan 7, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Self-standing GaN substrate, GaN crystal, method for producing GaN...
- Patent number 10,475,887
- Issue date Nov 12, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Satoru Nagao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal of nitride of group-13 metal on periodic table, and method...
- Patent number 10,309,038
- Issue date Jun 4, 2019
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 10,301,743
- Issue date May 28, 2019
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN substrate, method for producing GaN substrate, method for produ...
- Patent number 10,066,319
- Issue date Sep 4, 2018
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal of nitride of group-13 metal on periodic table, and method...
- Patent number 9,890,474
- Issue date Feb 13, 2018
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride substrate and manufacturing method of nitride semic...
- Patent number 9,673,046
- Issue date Jun 6, 2017
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 9,518,337
- Issue date Dec 13, 2016
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for producing nitride crystal
- Patent number 9,163,324
- Issue date Oct 20, 2015
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing nitride crystal and nitride crystal
- Patent number 9,096,945
- Issue date Aug 4, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing semiconductor crystal, apparatus for crystal p...
- Patent number 8,574,532
- Issue date Nov 5, 2013
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
P-type gaas single crystal and method for manufacturing the same
- Patent number 6,325,849
- Issue date Dec 4, 2001
- Mitsubishi Chemical Corporation
- Fujisawa Hideo
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20220033992
- Publication date Feb 3, 2022
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20210273058
- Publication date Sep 2, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20210230770
- Publication date Jul 29, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20210090886
- Publication date Mar 25, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE C-PLANE GAN SUBSTRATE
- Publication number 20200350163
- Publication date Nov 5, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
- Publication number 20200321438
- Publication date Oct 8, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
- Publication number 20200303187
- Publication date Sep 24, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20200109489
- Publication date Apr 9, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20200013860
- Publication date Jan 9, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20190312111
- Publication date Oct 10, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...
- Publication number 20190203379
- Publication date Jul 4, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20190189438
- Publication date Jun 20, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
- Publication number 20190189439
- Publication date Jun 20, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20190127881
- Publication date May 2, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...
- Publication number 20180334758
- Publication date Nov 22, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...
- Publication number 20180105953
- Publication date Apr 19, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20170327971
- Publication date Nov 16, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
- Publication number 20170200789
- Publication date Jul 13, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20170051434
- Publication date Feb 23, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...
- Publication number 20160319460
- Publication date Nov 3, 2016
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...
- Publication number 20160233306
- Publication date Aug 11, 2016
- MITSUBISHI CHEMICAL CORPORATION
- Satoru NAGAO
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...
- Publication number 20150361587
- Publication date Dec 17, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL
- Publication number 20150354086
- Publication date Dec 10, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...
- Publication number 20150311068
- Publication date Oct 29, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20150247256
- Publication date Sep 3, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL
- Publication number 20130108537
- Publication date May 2, 2013
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE CRYSTAL
- Publication number 20120251431
- Publication date Oct 4, 2012
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL, APPARATUS FOR CRYSTAL P...
- Publication number 20120164057
- Publication date Jun 28, 2012
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH

Hideo Fujisawa

Person

Patents Grantslast 30 patents

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Conductive C-plane GaN substrate

Gallium nitride substrate and manufacturing method of nitride semic...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

GaN single crystal and method for manufacturing GaN single crystal

Method for growing GaN crystal and c-plane GaN substrate

Method for producing nitride crystal and nitride crystal

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Self-standing GaN substrate, GaN crystal, method for producing GaN...

GaN single crystal and method for manufacturing GaN single crystal

Crystal of nitride of group-13 metal on periodic table, and method...

Conductive C-plane GaN substrate

Conductive C-plane GaN substrate

Gallium nitride substrate and manufacturing method of nitride semic...

Method for growing GaN crystal and C-plane GaN substrate

GaN substrate, method for producing GaN substrate, method for produ...

Method for producing nitride crystal and nitride crystal

Self-standing GaN substrate, GaN crystal, method for producing GaN...

Crystal of nitride of group-13 metal on periodic table, and method...

GaN single crystal and method for manufacturing GaN single crystal

GaN substrate, method for producing GaN substrate, method for produ...

Crystal of nitride of group-13 metal on periodic table, and method...

Gallium nitride substrate and manufacturing method of nitride semic...

Method for producing nitride crystal and nitride crystal

Method for producing nitride crystal

Method for producing nitride crystal and nitride crystal

Method for producing semiconductor crystal, apparatus for crystal p...

P-type gaas single crystal and method for manufacturing the same

Patents Applicationslast 30 patents

CONDUCTIVE C-PLANE GaN SUBSTRATE

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

CONDUCTIVE C-PLANE GaN SUBSTRATE

CONDUCTIVE C-PLANE GAN SUBSTRATE

GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...

METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...

CONDUCTIVE C-PLANE GaN SUBSTRATE

METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...

CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

GaN SUBSTRATE, METHOD FOR PRODUCING GaN SUBSTRATE, METHOD FOR PRODU...

SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN...

CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...

METHOD FOR PRODUCING NITRIDE CRYSTAL

GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMIC...

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL

METHOD FOR PRODUCING NITRIDE CRYSTAL

METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL, APPARATUS FOR CRYSTAL P...