Hideo NAMITA

Person

Ibaraki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 11,810,782
- Issue date Nov 7, 2023
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,591,715
- Issue date Feb 28, 2023
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing GaN crystal and c-plane GaN substrate
- Patent number 11,404,268
- Issue date Aug 2, 2022
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Non-polar or semi-polar GaN wafer
- Patent number 11,236,439
- Issue date Feb 1, 2022
- Mitsubishi Chemical Corporation
- Yusuke Tsukada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 11,001,940
- Issue date May 11, 2021
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Crystal of nitride of group-13 metal on periodic table, and method...
- Patent number 10,995,421
- Issue date May 4, 2021
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 10,903,072
- Issue date Jan 26, 2021
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive C-plane GaN substrate
- Patent number 10,796,904
- Issue date Oct 6, 2020
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing GaN crystal and C-plane GaN substrate
- Patent number 10,720,326
- Issue date Jul 21, 2020
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal of nitride of group-13 metal on periodic table, and method...
- Patent number 10,309,038
- Issue date Jun 4, 2019
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN single crystal and method for manufacturing GaN single crystal
- Patent number 10,301,743
- Issue date May 28, 2019
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal of nitride of group-13 metal on periodic table, and method...
- Patent number 9,890,474
- Issue date Feb 13, 2018
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20240105449
- Publication date Mar 28, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20210230770
- Publication date Jul 29, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20210090886
- Publication date Mar 25, 2021
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE C-PLANE GAN SUBSTRATE
- Publication number 20200350163
- Publication date Nov 5, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
- Publication number 20200303187
- Publication date Sep 24, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-POLAR OR SEMI-POLAR GaN WAFER
- Publication number 20200032420
- Publication date Jan 30, 2020
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...
- Publication number 20190203379
- Publication date Jul 4, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
CONDUCTIVE C-PLANE GaN SUBSTRATE
- Publication number 20190189438
- Publication date Jun 20, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE
- Publication number 20190189439
- Publication date Jun 20, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20190127881
- Publication date May 2, 2019
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
NON-POLAR OR SEMI-POLAR GaN WAFER
- Publication number 20180142376
- Publication date May 24, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yusuke TSUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...
- Publication number 20180105953
- Publication date Apr 19, 2018
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL
- Publication number 20170327971
- Publication date Nov 16, 2017
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...
- Publication number 20150361587
- Publication date Dec 17, 2015
- MITSUBISHI CHEMICAL CORPORATION
- Yutaka MIKAWA
- C30 - CRYSTAL GROWTH

Hideo NAMITA

Person

Patents Grantslast 30 patents

Conductive C-plane GaN substrate

GaN single crystal and method for manufacturing GaN single crystal

Method for growing GaN crystal and c-plane GaN substrate

Non-polar or semi-polar GaN wafer

GaN single crystal and method for manufacturing GaN single crystal

Crystal of nitride of group-13 metal on periodic table, and method...

Conductive C-plane GaN substrate

Conductive C-plane GaN substrate

Method for growing GaN crystal and C-plane GaN substrate

Crystal of nitride of group-13 metal on periodic table, and method...

GaN single crystal and method for manufacturing GaN single crystal

Crystal of nitride of group-13 metal on periodic table, and method...

Patents Applicationslast 30 patents

CONDUCTIVE C-PLANE GaN SUBSTRATE

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

CONDUCTIVE C-PLANE GaN SUBSTRATE

CONDUCTIVE C-PLANE GAN SUBSTRATE

METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE

NON-POLAR OR SEMI-POLAR GaN WAFER

CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...

CONDUCTIVE C-PLANE GaN SUBSTRATE

METHOD FOR GROWING GaN CRYSTAL AND C-PLANE GaN SUBSTRATE

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

NON-POLAR OR SEMI-POLAR GaN WAFER

CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...

GaN SINGLE CRYSTAL AND METHOD FOR MANUFACTURING GaN SINGLE CRYSTAL

CRYSTAL OF NITRIDE OF GROUP-13 METAL ON PERIODIC TABLE, AND METHOD...