Hideo Ohno

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Device, sensor node, access controller, data transfer method, and p...
- Patent number 12,131,764
- Issue date Oct 29, 2024
- Tohoku University
- Masanori Natsui
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Device, sensor node, access controller, data transfer method, and p...
- Patent number 11,862,217
- Issue date Jan 2, 2024
- Tohoku University
- Masanori Natsui
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 11,690,299
- Issue date Jun 27, 2023
- TOHOKU UNIVERSITY
- Hideo Sato
Information Patent Grant
Memory circuit device including a selection circuit unit shared by...
- Patent number 11,600,313
- Issue date Mar 7, 2023
- TOHOKU UNIVERSITY
- Takahiro Hanyu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction element and magnetic memory
- Patent number 11,563,169
- Issue date Jan 24, 2023
- Tohoku University
- Hideo Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element, circuit device, and circuit unit
- Patent number 11,557,719
- Issue date Jan 17, 2023
- TOHOKU UNIVERSITY
- Shunsuke Fukami
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 11,462,253
- Issue date Oct 4, 2022
- Tohoku University
- Koichi Nishioka
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic multilayer film, magnetic memory element, magnetic memory...
- Patent number 11,200,933
- Issue date Dec 14, 2021
- Tohoku University
- Shunsuke Fukami
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory circuit device including a selection circuit unit shared by...
- Patent number 11,183,228
- Issue date Nov 23, 2021
- TOHOKU UNIVERSITY
- Takahiro Hanyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Data writing device for variable-resistance memory element and non-...
- Patent number 11,133,046
- Issue date Sep 28, 2021
- Tohoku University
- Takahiro Hanyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin electronics element and method of manufacturing thereof
- Patent number 11,121,310
- Issue date Sep 14, 2021
- Tohoku University
- Soshi Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element, magnetic memory, and method for m...
- Patent number 11,081,641
- Issue date Aug 3, 2021
- TOHOKU UNIVERSITY
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for measuring thermal stability factor of magneti...
- Patent number 11,054,463
- Issue date Jul 6, 2021
- Tohoku University
- Kenchi Ito
- G01 - MEASURING TESTING
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,998,491
- Issue date May 4, 2021
- TOHOKU UNIVERSITY
- Kyota Watanabe
- G11 - INFORMATION STORAGE
Information Patent Grant
Data write circuit of resistive memory element
- Patent number 10,896,729
- Issue date Jan 19, 2021
- TOHOKU UNIVERSITY
- Takahiro Hanyu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction element and method for manufacturing same
- Patent number 10,833,256
- Issue date Nov 10, 2020
- Tohoku University
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,804,457
- Issue date Oct 13, 2020
- Tohoku University
- Hideo Ohno
- G11 - INFORMATION STORAGE
Information Patent Grant
System, method, and non-transitory computer readable recording medi...
- Patent number 10,783,294
- Issue date Sep 22, 2020
- Tohoku University
- Masanori Natsui
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Reading device and logic device
- Patent number 10,783,936
- Issue date Sep 22, 2020
- TOHOKU UNIVERSITY
- Takahiro Hanyu
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing magnetic tunnel coupling element
- Patent number 10,749,107
- Issue date Aug 18, 2020
- Tohoku University
- Hiroaki Honjo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Magnetic material and method of manufacturing the same
- Patent number 10,706,996
- Issue date Jul 7, 2020
- Tohoku University
- Shunsuke Fukami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 10,658,572
- Issue date May 19, 2020
- Tohoku University
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 10,651,369
- Issue date May 12, 2020
- Tohoku University
- Hideo Ohno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing magnetic memory comprising magnetic tunnel jun...
- Patent number 10,644,234
- Issue date May 5, 2020
- Tohoku University
- Kenchi Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element including a recording layer with p...
- Patent number 10,622,550
- Issue date Apr 14, 2020
- Tohoku University
- Shunsuke Fukami
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Magnetic tunnel junction element and magnetic memory
- Patent number 10,586,580
- Issue date Mar 10, 2020
- Tohoku University
- Hiroaki Honjo
- G11 - INFORMATION STORAGE
Information Patent Grant
Spintronics element
- Patent number 10,424,725
- Issue date Sep 24, 2019
- Tohoku University
- Soshi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetic memory device
- Patent number 10,410,703
- Issue date Sep 10, 2019
- Tohoku University
- Shunsuke Fukami
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Spin electronics element and method of manufacturing thereof
- Patent number 10,396,274
- Issue date Aug 27, 2019
- Tohoku University
- Soshi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 10,263,180
- Issue date Apr 16, 2019
- Tohoku University
- Hideo Sato
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME
- Publication number 20240371559
- Publication date Nov 7, 2024
- TOHOKU UNIVERSITY
- Yutaro TAKEUCHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
SUPERPARAMAGNETIC TUNNEL JUNCTION ELEMENT AND COMPUTING SYSTEM
- Publication number 20240212907
- Publication date Jun 27, 2024
- TOHOKU UNIVERSITY
- Keito KOBAYASHI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICE, SENSOR NODE, ACCESS CONTROLLER, DATA TRANSFER METHOD, AND P...
- Publication number 20240071452
- Publication date Feb 29, 2024
- TOHOKU UNIVERSITY
- Masanori Natsui
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RANDOM NUMBER GENERATION UNIT AND COMPUTING SYSTEM
- Publication number 20220350572
- Publication date Nov 3, 2022
- TOHOKU UNIVERSITY
- Shunsuke FUKAMI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
DEVICE, SENSOR NODE, ACCESS CONTROLLER, DATA TRANSFER METHOD, AND P...
- Publication number 20220157361
- Publication date May 19, 2022
- TOHOKU UNIVERSITY
- Masanori Natsui
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MEMORY CIRCUIT DEVICE AND METHOD FOR USING SAME
- Publication number 20220059149
- Publication date Feb 24, 2022
- Tohoku University
- Takahiro Hanyu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, CIRCUIT DEVICE, AND CIRCUIT UNIT
- Publication number 20210119114
- Publication date Apr 22, 2021
- Tohoku University
- Shunsuke Fukami
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20210098689
- Publication date Apr 1, 2021
- Tohoku University
- Kyota WATANABE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20210005808
- Publication date Jan 7, 2021
- Tohoku University
- Hideo SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MULTILAYER FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY...
- Publication number 20200286536
- Publication date Sep 10, 2020
- TOHOKU UNIVERSITY
- Shunsuke FUKAMI
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY CIRCUIT DEVICE AND METHOD FOR USING SAME
- Publication number 20200265883
- Publication date Aug 20, 2020
- Tohoku University
- Takahiro Hanyu
- G11 - INFORMATION STORAGE
Information Patent Application
DATA WRITING DEVICE FOR VARIABLE-RESISTANCE MEMORY ELEMENT AND NON-...
- Publication number 20200211611
- Publication date Jul 2, 2020
- TOHOKU UNIVERSITY
- Takahiro Hanyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20200090719
- Publication date Mar 19, 2020
- TOHOKU UNIVERSITY
- Koichi NISHIOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DATA WRITE CIRCUIT OF RESISTIVE MEMORY ELEMENT
- Publication number 20200082884
- Publication date Mar 12, 2020
- Tohoku University
- Takahiro Hanyu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD FOR M...
- Publication number 20200044142
- Publication date Feb 6, 2020
- TOHOKU UNIVERSITY
- Hiroaki HONJO
- G11 - INFORMATION STORAGE
Information Patent Application
READING DEVICE AND LOGIC DEVICE
- Publication number 20190371370
- Publication date Dec 5, 2019
- Tohoku University
- Takahiro Hanyu
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ELECTRONICS ELEMENT AND METHOD OF MANUFACTURING THEREOF
- Publication number 20190363245
- Publication date Nov 28, 2019
- TOHOKU UNIVERSITY
- Soshi SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY
- Publication number 20190304526
- Publication date Oct 3, 2019
- TOHOKU UNIVERSITY
- Hiroaki HONJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CIRCUIT DESIGN SUPPORT SYSTEM, CIRCUIT DESIGN SUPPORT METHOD, CIRCU...
- Publication number 20190243929
- Publication date Aug 8, 2019
- TOHOKU UNIVERSITY
- Masanori NATSUI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
MAGNETIC TUNNEL COUPLING ELEMENT AND METHOD FOR MANUFACTURING SAME
- Publication number 20190229262
- Publication date Jul 25, 2019
- TOHOKU UNIVERSITY
- Hiroaki Honjo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD AND SYSTEM FOR MEASURING THERMAL STABILITY FACTOR OF MAGNETI...
- Publication number 20190219633
- Publication date Jul 18, 2019
- TOHOKU UNIVERSITY
- Kenchi ITO
- G01 - MEASURING TESTING
Information Patent Application
METHOD FOR PRODUCING MAGNETIC MEMORY COMPRISING MAGNETIC TUNNEL JUN...
- Publication number 20190198755
- Publication date Jun 27, 2019
- TOHOKU UNIVERSITY
- Kenchi ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD FOR MANUFACTURING SAME
- Publication number 20190189917
- Publication date Jun 20, 2019
- TOHOKU UNIVERSITY
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20190074433
- Publication date Mar 7, 2019
- TOHOKU UNIVERSITY
- Hideo SATO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY
- Publication number 20190019944
- Publication date Jan 17, 2019
- TOHOKU UNIVERSITY
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Application
SPINTRONICS ELEMENT
- Publication number 20180301621
- Publication date Oct 18, 2018
- TOHOKU UNIVERSITY
- Soshi SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20180175286
- Publication date Jun 21, 2018
- TOHOKU UNIVERSITY
- Hideo SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE
- Publication number 20180108390
- Publication date Apr 19, 2018
- TOHOKU UNIVERSITY
- Shunsuke FUKAMI
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY DEVICE, MANUFACTU...
- Publication number 20180019388
- Publication date Jan 18, 2018
- TOHOKU UNIVERSITY
- Shunsuke FUKAMI
- G11 - INFORMATION STORAGE
Information Patent Application
DATA-WRITE DEVICE FOR RESISTANCE-CHANGE MEMORY ELEMENT
- Publication number 20170365338
- Publication date Dec 21, 2017
- TOHOKU UNIVERSITY
- Takahiro Hanyu
- G11 - INFORMATION STORAGE

Person

Patents Grantslast 30 patents

Device, sensor node, access controller, data transfer method, and p...

Device, sensor node, access controller, data transfer method, and p...

Magnetoresistance effect element and magnetic memory

Memory circuit device including a selection circuit unit shared by...

Magnetic tunnel junction element and magnetic memory

Magnetoresistance effect element, circuit device, and circuit unit

Magnetoresistance effect element and magnetic memory

Magnetic multilayer film, magnetic memory element, magnetic memory...

Memory circuit device including a selection circuit unit shared by...

Data writing device for variable-resistance memory element and non-...

Spin electronics element and method of manufacturing thereof

Magnetoresistance effect element, magnetic memory, and method for m...

Method and system for measuring thermal stability factor of magneti...

Magnetoresistive element and magnetic memory

Data write circuit of resistive memory element

Magnetic tunnel junction element and method for manufacturing same

Magnetoresistive element and magnetic memory

System, method, and non-transitory computer readable recording medi...

Reading device and logic device

Method of manufacturing magnetic tunnel coupling element

Magnetic material and method of manufacturing the same

Magnetoresistance effect element and magnetic memory

Magnetoresistive element and magnetic memory

Method for producing magnetic memory comprising magnetic tunnel jun...

Magnetoresistance effect element including a recording layer with p...

Magnetic tunnel junction element and magnetic memory

Spintronics element

Magnetoresistance effect element and magnetic memory device

Spin electronics element and method of manufacturing thereof

Magnetoresistance effect element and magnetic memory

Patents Applicationslast 30 patents

DIGITAL DEVICE, METHOD FOR PRODUCING SAME, AND METHOD FOR USING SAME

SUPERPARAMAGNETIC TUNNEL JUNCTION ELEMENT AND COMPUTING SYSTEM

DEVICE, SENSOR NODE, ACCESS CONTROLLER, DATA TRANSFER METHOD, AND P...

RANDOM NUMBER GENERATION UNIT AND COMPUTING SYSTEM

DEVICE, SENSOR NODE, ACCESS CONTROLLER, DATA TRANSFER METHOD, AND P...

MEMORY CIRCUIT DEVICE AND METHOD FOR USING SAME

MAGNETORESISTANCE EFFECT ELEMENT, CIRCUIT DEVICE, AND CIRCUIT UNIT

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETIC MULTILAYER FILM, MAGNETIC MEMORY ELEMENT, MAGNETIC MEMORY...

MEMORY CIRCUIT DEVICE AND METHOD FOR USING SAME

DATA WRITING DEVICE FOR VARIABLE-RESISTANCE MEMORY ELEMENT AND NON-...

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

DATA WRITE CIRCUIT OF RESISTIVE MEMORY ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD FOR M...

READING DEVICE AND LOGIC DEVICE

SPIN ELECTRONICS ELEMENT AND METHOD OF MANUFACTURING THEREOF

MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY

CIRCUIT DESIGN SUPPORT SYSTEM, CIRCUIT DESIGN SUPPORT METHOD, CIRCU...

MAGNETIC TUNNEL COUPLING ELEMENT AND METHOD FOR MANUFACTURING SAME

METHOD AND SYSTEM FOR MEASURING THERMAL STABILITY FACTOR OF MAGNETI...

METHOD FOR PRODUCING MAGNETIC MEMORY COMPRISING MAGNETIC TUNNEL JUN...

MAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD FOR MANUFACTURING SAME

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY

SPINTRONICS ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY DEVICE, MANUFACTU...

DATA-WRITE DEVICE FOR RESISTANCE-CHANGE MEMORY ELEMENT