Hideto MIYAKE

Person

Tsu, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Nitride semiconductor template and nitride semiconductor device
- Patent number 11,574,809
- Issue date Feb 7, 2023
- Sumitomo Chemical Company, Limited
- Hajime Fujikura
- C30 - CRYSTAL GROWTH
Information Patent Grant
Nitride semiconductor template and nitride semiconductor device
- Patent number 11,075,077
- Issue date Jul 27, 2021
- SCIOCS COMPANY LIMITED
- Hajime Fujikura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing nitride semiconductor substrate
- Patent number 10,260,146
- Issue date Apr 16, 2019
- Mie University
- Hideto Miyake
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Substrate having annealed aluminum nitride layer formed thereon and...
- Patent number 9,614,124
- Issue date Apr 4, 2017
- TOHOKU UNIVERSITY
- Hiroyuki Fukuyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group 3-5 nitride semiconductor multilayer substrate, method for ma...
- Patent number 8,053,811
- Issue date Nov 8, 2011
- Sumitomo Chemical Company Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Substrate of gallium nitride single crystal and process for produci...
- Patent number 7,399,687
- Issue date Jul 15, 2008
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing III-V group compound semiconductor
- Patent number 6,946,308
- Issue date Sep 20, 2005
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-V compound semiconductor
- Patent number 6,844,574
- Issue date Jan 18, 2005
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating III-V group compound semiconductor
- Patent number 6,756,246
- Issue date Jun 29, 2004
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III-V compound semiconductor and method of producing the same
- Patent number 6,503,610
- Issue date Jan 7, 2003
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
III NITRIDE LIGHT-EMITTING DEVICE, III NITRIDE EPITAXIAL WAFER, MET...
- Publication number 20240379906
- Publication date Nov 14, 2024
- MIE UNIVERSITY
- Kenjiro Uesugi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT, AND METHOD...
- Publication number 20230100683
- Publication date Mar 30, 2023
- MIE UNIVERSITY
- Hideto MIYAKE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20180274088
- Publication date Sep 27, 2018
- MIE UNIVERSITY
- Hideto MIYAKE
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE
- Publication number 20180204722
- Publication date Jul 19, 2018
- MIE UNIVERSITY
- Hideto Miyake
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR TEMPLATE, NITRIDE SE...
- Publication number 20180158680
- Publication date Jun 7, 2018
- SCIOCS Company Limited
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR TEMPLATE, NITRIDE SE...
- Publication number 20180158681
- Publication date Jun 7, 2018
- SCIOCS Company Limited
- Hajime FUJIKURA
- C30 - CRYSTAL GROWTH
Information Patent Application
SUBSTRATE HAVING ANNEALED ALUMINUM NITRIDE LAYER FORMED THEREON AND...
- Publication number 20160254411
- Publication date Sep 1, 2016
- TOHOKU UNIVERSITY
- Hiroyuki FUKUYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Ma...
- Publication number 20090085165
- Publication date Apr 2, 2009
- Sumitomo Chemical Company, Limited
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Substrate of gallium nitride single crystal and process for produci...
- Publication number 20060172512
- Publication date Aug 3, 2006
- Kazumasa Hiramatsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride semiconductor film and its production method
- Publication number 20040157358
- Publication date Aug 12, 2004
- Kazumasa Hiramatsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of manufacturing III-V group compound semiconductor
- Publication number 20030211710
- Publication date Nov 13, 2003
- Kazumasa Hiramatsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for fabricating III-V Group compound semiconductor
- Publication number 20030045017
- Publication date Mar 6, 2003
- Kazumasa Hiramatsu
- C30 - CRYSTAL GROWTH
Information Patent Application
Group III-V compound semiconductor and method of producing the same
- Publication number 20010031385
- Publication date Oct 18, 2001
- Kazumasa Hiramatsu
- C30 - CRYSTAL GROWTH

Hideto MIYAKE

Person

Patents Grantslast 30 patents

Nitride semiconductor template and nitride semiconductor device

Nitride semiconductor template and nitride semiconductor device

Method for manufacturing nitride semiconductor substrate

Substrate having annealed aluminum nitride layer formed thereon and...

Group 3-5 nitride semiconductor multilayer substrate, method for ma...

Substrate of gallium nitride single crystal and process for produci...

Method of manufacturing III-V group compound semiconductor

III-V compound semiconductor

Method for fabricating III-V group compound semiconductor

Group III-V compound semiconductor and method of producing the same

Patents Applicationslast 30 patents

III NITRIDE LIGHT-EMITTING DEVICE, III NITRIDE EPITAXIAL WAFER, MET...

NITRIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR ELEMENT, AND METHOD...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR TEMPLATE, NITRIDE SE...

METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR TEMPLATE, NITRIDE SE...

SUBSTRATE HAVING ANNEALED ALUMINUM NITRIDE LAYER FORMED THEREON AND...

Group 3-5 Nitride Semiconductor Multilayer Substrate, Method for Ma...

Substrate of gallium nitride single crystal and process for produci...

Group III nitride semiconductor film and its production method

Method of manufacturing III-V group compound semiconductor

Method for fabricating III-V Group compound semiconductor

Group III-V compound semiconductor and method of producing the same