Hidetoshi Asamura

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Sakai-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing single crystal 3C-SiC substrate and single...
- Patent number 8,986,448
- Issue date Mar 24, 2015
- Air Water Inc.
- Hidetoshi Asamura
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for manufacturing nitrogen compound semiconductor substrate...
- Patent number 8,563,442
- Issue date Oct 22, 2013
- Air Water Inc.
- Keisuke Kawamura
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SINGLE CRYSTAL 3C-SIC SUBSTRATE AND SINGLE...
- Publication number 20130040103
- Publication date Feb 14, 2013
- Hidetoshi Asamura
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE...
- Publication number 20110089433
- Publication date Apr 21, 2011
- Keisuke Kawamura
- C30 - CRYSTAL GROWTH