Hidetoshi Nakanishi

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Yokohama-shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 7,091,554
- Issue date Aug 15, 2006
- Kabushiki Kaisha Toshiba
- Hiroki Muraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 6,441,406
- Issue date Aug 27, 2002
- Kabushiki Kaisha Toshiba
- Hidetoshi Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS gate controlled thyristor
- Patent number 5,796,124
- Issue date Aug 18, 1998
- Kabushiki Kaisha Toshiba
- Hidetoshi Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS gate controlled thyristor
- Patent number 5,543,639
- Issue date Aug 6, 1996
- Kabushiki Kaisha Toshiba
- Hidetoshi Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS composite type semiconductor device
- Patent number 5,539,232
- Issue date Jul 23, 1996
- Kabushiki Kaisha Toshiba
- Hidetoshi Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 5,489,789
- Issue date Feb 6, 1996
- Kabushiki Kaisha Toshiba
- Hidetoshi Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS gate controlled thyristor having improved turn on/turn off char...
- Patent number 5,336,907
- Issue date Aug 9, 1994
- Kabushiki Kaisha Toshiba
- Hidetoshi Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device
- Publication number 20040183128
- Publication date Sep 23, 2004
- Kabushiki Kaisha Toshiba
- Hiroki Muraoka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device
- Publication number 20020089015
- Publication date Jul 11, 2002
- Kabushiki Kaisha Toshiba
- Hidetoshi Nakanishi
- H01 - BASIC ELECTRIC ELEMENTS