Hideyuki Fukuhara

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Method of repairing semiconductor memory, electron-beam memory repa...
- Patent number 6,434,063
- Issue date Aug 13, 2002
- Advantest Corporation
- Naoki Nishio
- G11 - INFORMATION STORAGE
Information Patent Grant
Fuse in top level metal and in a step, process of making and proces...
- Patent number 6,331,739
- Issue date Dec 18, 2001
- Texas Instruments Incorporated
- Hideyuki Fukuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device with antifuse
- Patent number 6,249,472
- Issue date Jun 19, 2001
- Texas Instruments Incorporated
- Yoshimitsu Tamura
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuit for reducing stand-by current induced by defects in memory...
- Patent number 6,038,191
- Issue date Mar 14, 2000
- Texas Instruments Incorporated
- Hideyuki Fukuhara
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of repairing semiconductor memory, electron-beam memory repa...
- Patent number 5,985,677
- Issue date Nov 16, 1999
- Advantest Corporation
- Naoki Nishio
- G11 - INFORMATION STORAGE
Information Patent Grant
Apparatus and method for estimating chip yield
- Patent number 5,754,432
- Issue date May 19, 1998
- Texas Instruments Incorporated
- Takao Komatsuzaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making and process of trimming a fuse in a top level met...
- Patent number 5,650,355
- Issue date Jul 22, 1997
- Texas Instruments Incorporated
- Hideyuki Fukuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating a semiconductor device with laser programabl...
- Patent number 5,641,701
- Issue date Jun 24, 1997
- Texas Instruments Incorporated
- Hideyuki Fukuhara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making fuse with non-corrosive termination of corrosive f...
- Patent number 5,618,750
- Issue date Apr 8, 1997
- Texas Instruments Incorporated
- Hideyuki Fukuhara
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Redundancy memory circuit
- Publication number 20020173055
- Publication date Nov 21, 2002
- Naoki Nishio
- H01 - BASIC ELECTRIC ELEMENTS

Hideyuki Fukuhara

Person

Patents Grantslast 30 patents

Method of repairing semiconductor memory, electron-beam memory repa...

Fuse in top level metal and in a step, process of making and proces...

Semiconductor memory device with antifuse

Circuit for reducing stand-by current induced by defects in memory...

Method of repairing semiconductor memory, electron-beam memory repa...

Apparatus and method for estimating chip yield

Process of making and process of trimming a fuse in a top level met...

Method for fabricating a semiconductor device with laser programabl...

Method of making fuse with non-corrosive termination of corrosive f...

Patents Applicationslast 30 patents

Redundancy memory circuit