Hideyuki Uehigashi

Person

Obu-city, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon carbide single crystal
- Patent number 11,846,040
- Issue date Dec 19, 2023
- Denso Corporation
- Yuichiro Tokuda
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
SiC single crystal composite and SiC ingot
- Patent number 11,618,969
- Issue date Apr 4, 2023
- Showa Denko K.K.
- Yohei Fujikawa
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Crystalline oxide semiconductor
- Patent number 11,152,472
- Issue date Oct 19, 2021
- FLOSFIA INC.
- Isao Takahashi
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
SiC epitaxial wafer and method for producing same
- Patent number 11,107,892
- Issue date Aug 31, 2021
- Showa Denko K.K.
- Keisuke Fukada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Manufacturing method of SiC ingot
- Patent number 11,008,670
- Issue date May 18, 2021
- Showa Denko K.K.
- Yohei Fujikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Film forming apparatus
- Patent number 10,896,831
- Issue date Jan 19, 2021
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor substrate and silicon carbide semicon...
- Patent number 10,840,339
- Issue date Nov 17, 2020
- Denso Corporation
- Hideyuki Uehigashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing SiC epitaxial wafer by simultaneously util...
- Patent number 10,262,863
- Issue date Apr 16, 2019
- Showa Denko K.K.
- Keisuke Fukada
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Silicon carbide semiconductor device having junction barrier Schott...
- Patent number 9,337,276
- Issue date May 10, 2016
- Denso Corporation
- Hideyuki Uehigashi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBI...
- Publication number 20240250128
- Publication date Jul 25, 2024
- DENSO CORPORATION
- HIDEYUKI UEHIGASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...
- Publication number 20240234515
- Publication date Jul 11, 2024
- DENSO CORPORATION
- Hideyuki UEHIGASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...
- Publication number 20240213332
- Publication date Jun 27, 2024
- DENSO CORPORATION
- HIDEYUKI UEHIGASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE...
- Publication number 20240186381
- Publication date Jun 6, 2024
- DENSO CORPORATION
- Hideyuki UEHIGASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...
- Publication number 20240136409
- Publication date Apr 25, 2024
- DENSO CORPORATION
- Hideyuki UEHIGASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND POWER CONVERTER
- Publication number 20230040316
- Publication date Feb 9, 2023
- DENSO CORPORATION
- DAISUKE FUKUOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE SINGLE CRYSTAL
- Publication number 20210102311
- Publication date Apr 8, 2021
- DENSO CORPORATION
- Yuichiro TOKUDA
- C30 - CRYSTAL GROWTH
Information Patent Application
CRYSTALLINE OXIDE SEMICONDUCTOR
- Publication number 20200212184
- Publication date Jul 2, 2020
- FLOSFIA INC.
- Isao TAKAHASHI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
MANUFACTURING METHOD OF SiC INGOT
- Publication number 20200087815
- Publication date Mar 19, 2020
- SHOWA DENKO K.K.
- Yohei FUJIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
- Publication number 20200083330
- Publication date Mar 12, 2020
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME
- Publication number 20190376206
- Publication date Dec 12, 2019
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SiC SINGLE CRYSTAL COMPOSITE AND SiC INGOT
- Publication number 20190360118
- Publication date Nov 28, 2019
- SHOWA DENKO K.K.
- Yohei FUJIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND SILICON CARBIDE SEMICON...
- Publication number 20190252503
- Publication date Aug 15, 2019
- DENSO CORPORATION
- Hideyuki UEHIGASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM FORMING APPARTUS
- Publication number 20180374721
- Publication date Dec 27, 2018
- NuFlare Technology, Inc.
- Kunihiko Suzuki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL GROW...
- Publication number 20170345658
- Publication date Nov 30, 2017
- SHOWA DENKO K.K.
- Keisuke FUKADA
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING JUNCTION BARRIER SCHOTT...
- Publication number 20150206941
- Publication date Jul 23, 2015
- DENSO CORPORATION
- Hideyuki Uehigashi
- H01 - BASIC ELECTRIC ELEMENTS

Hideyuki Uehigashi

Person

Patents Grantslast 30 patents

Silicon carbide single crystal

SiC single crystal composite and SiC ingot

Crystalline oxide semiconductor

SiC epitaxial wafer and method for producing same

Manufacturing method of SiC ingot

Film forming apparatus

Silicon carbide semiconductor substrate and silicon carbide semicon...

Method for manufacturing SiC epitaxial wafer by simultaneously util...

Silicon carbide semiconductor device having junction barrier Schott...

Patents Applicationslast 30 patents

SILICON CARBIDE SUBSTRATE, SILICON CARBIDE WAFER, AND SILICON CARBI...

SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...

SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...

SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SEMICONDUCTOR DEVICE...

SILICON CARBIDE WAFER AND SILICON CARBIDE SEMICONDUCTOR DEVICE INCL...

SEMICONDUCTOR DEVICE AND POWER CONVERTER

SILICON CARBIDE SINGLE CRYSTAL

CRYSTALLINE OXIDE SEMICONDUCTOR

MANUFACTURING METHOD OF SiC INGOT

SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

SiC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME

SiC SINGLE CRYSTAL COMPOSITE AND SiC INGOT

SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND SILICON CARBIDE SEMICON...

FILM FORMING APPARTUS

METHOD FOR MANUFACTURING SIC EPITAXIAL WAFER AND SIC EPITAXIAL GROW...

SILICON CARBIDE SEMICONDUCTOR DEVICE HAVING JUNCTION BARRIER SCHOTT...