Hiroaki HONJO

Person

Sendai-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic tunnel junction device, method for manufacturing magnetic...
- Patent number 11,963,458
- Issue date Apr 16, 2024
- TOHOKU UNIVERSITY
- Koichi Nishioka
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive element and magnetic memory
- Patent number 11,770,981
- Issue date Sep 26, 2023
- Tohoku University
- Hiroaki Honjo
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 11,765,981
- Issue date Sep 19, 2023
- TOHOKU UNIVERSITY
- Sadahiko Miura
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction element and magnetic memory
- Patent number 11,563,169
- Issue date Jan 24, 2023
- Tohoku University
- Hideo Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 11,462,253
- Issue date Oct 4, 2022
- Tohoku University
- Koichi Nishioka
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 11,264,565
- Issue date Mar 1, 2022
- Tohoku University
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic memory element, method for producing same, and magnetic me...
- Patent number 11,258,006
- Issue date Feb 22, 2022
- TOHOKU UNIVERSITY
- Tetsuo Endoh
- G11 - INFORMATION STORAGE
Information Patent Grant
Spin electronics element and method of manufacturing thereof
- Patent number 11,121,310
- Issue date Sep 14, 2021
- Tohoku University
- Soshi Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element, magnetic memory, and method for m...
- Patent number 11,081,641
- Issue date Aug 3, 2021
- TOHOKU UNIVERSITY
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction element and method for manufacturing same
- Patent number 10,833,256
- Issue date Nov 10, 2020
- Tohoku University
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing magnetic tunnel coupling element
- Patent number 10,749,107
- Issue date Aug 18, 2020
- Tohoku University
- Hiroaki Honjo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 10,658,572
- Issue date May 19, 2020
- Tohoku University
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for producing magnetic memory comprising magnetic tunnel jun...
- Patent number 10,644,234
- Issue date May 5, 2020
- Tohoku University
- Kenchi Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic tunnel junction element and magnetic memory
- Patent number 10,586,580
- Issue date Mar 10, 2020
- Tohoku University
- Hiroaki Honjo
- G11 - INFORMATION STORAGE
Information Patent Grant
Spintronics element
- Patent number 10,424,725
- Issue date Sep 24, 2019
- Tohoku University
- Soshi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Spin electronics element and method of manufacturing thereof
- Patent number 10,396,274
- Issue date Aug 27, 2019
- Tohoku University
- Soshi Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistance effect element and magnetic memory
- Patent number 10,164,174
- Issue date Dec 25, 2018
- Tohoku University
- Hideo Sato
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20230292623
- Publication date Sep 14, 2023
- Tohoku University
- Sadahiko MIURA
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND FILM FORMATI...
- Publication number 20210399208
- Publication date Dec 23, 2021
- TOHOKU UNIVERSITY
- Koichi NISHIOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY
- Publication number 20210135094
- Publication date May 6, 2021
- TOHOKU UNIVERSITY
- Hiroaki HONJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, AND MAGNETIC ME...
- Publication number 20210091304
- Publication date Mar 25, 2021
- Tohoku University
- Tetsuo Endoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION DEVICE, METHOD FOR MANUFACTURING MAGNETIC...
- Publication number 20210057641
- Publication date Feb 25, 2021
- Tohoku University
- Koichi NISHIOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20200343442
- Publication date Oct 29, 2020
- TOHOKU UNIVERSITY
- Hiroaki HONJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20200090719
- Publication date Mar 19, 2020
- TOHOKU UNIVERSITY
- Koichi NISHIOKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD FOR M...
- Publication number 20200044142
- Publication date Feb 6, 2020
- TOHOKU UNIVERSITY
- Hiroaki HONJO
- G11 - INFORMATION STORAGE
Information Patent Application
SPIN ELECTRONICS ELEMENT AND METHOD OF MANUFACTURING THEREOF
- Publication number 20190363245
- Publication date Nov 28, 2019
- TOHOKU UNIVERSITY
- Soshi SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY
- Publication number 20190304526
- Publication date Oct 3, 2019
- TOHOKU UNIVERSITY
- Hiroaki HONJO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL COUPLING ELEMENT AND METHOD FOR MANUFACTURING SAME
- Publication number 20190229262
- Publication date Jul 25, 2019
- TOHOKU UNIVERSITY
- Hiroaki Honjo
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
METHOD FOR PRODUCING MAGNETIC MEMORY COMPRISING MAGNETIC TUNNEL JUN...
- Publication number 20190198755
- Publication date Jun 27, 2019
- TOHOKU UNIVERSITY
- Kenchi ITO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD FOR MANUFACTURING SAME
- Publication number 20190189917
- Publication date Jun 20, 2019
- TOHOKU UNIVERSITY
- Hiroaki Honjo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20190074433
- Publication date Mar 7, 2019
- TOHOKU UNIVERSITY
- Hideo SATO
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY
- Publication number 20190019944
- Publication date Jan 17, 2019
- TOHOKU UNIVERSITY
- Hideo Sato
- G11 - INFORMATION STORAGE
Information Patent Application
SPINTRONICS ELEMENT
- Publication number 20180301621
- Publication date Oct 18, 2018
- TOHOKU UNIVERSITY
- Soshi SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY
- Publication number 20180175286
- Publication date Jun 21, 2018
- TOHOKU UNIVERSITY
- Hideo SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN ELECTRONICS ELEMENT AND METHOD OF MANUFACTURING THEREOF
- Publication number 20170263854
- Publication date Sep 14, 2017
- TOHOKU UNIVERSITY
- Soshi SATO
- G11 - INFORMATION STORAGE

Hiroaki HONJO

Person

Patents Grantslast 30 patents

Magnetic tunnel junction device, method for manufacturing magnetic...

Magnetoresistive element and magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetic tunnel junction element and magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetoresistance effect element and magnetic memory

Magnetic memory element, method for producing same, and magnetic me...

Spin electronics element and method of manufacturing thereof

Magnetoresistance effect element, magnetic memory, and method for m...

Magnetic tunnel junction element and method for manufacturing same

Method of manufacturing magnetic tunnel coupling element

Magnetoresistance effect element and magnetic memory

Method for producing magnetic memory comprising magnetic tunnel jun...

Magnetic tunnel junction element and magnetic memory

Spintronics element

Spin electronics element and method of manufacturing thereof

Magnetoresistance effect element and magnetic memory

Patents Applicationslast 30 patents

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND FILM FORMATI...

MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY

MAGNETIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, AND MAGNETIC ME...

MAGNETIC TUNNEL JUNCTION DEVICE, METHOD FOR MANUFACTURING MAGNETIC...

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC MEMORY, AND METHOD FOR M...

SPIN ELECTRONICS ELEMENT AND METHOD OF MANUFACTURING THEREOF

MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY

MAGNETIC TUNNEL COUPLING ELEMENT AND METHOD FOR MANUFACTURING SAME

METHOD FOR PRODUCING MAGNETIC MEMORY COMPRISING MAGNETIC TUNNEL JUN...

MAGNETIC TUNNEL JUNCTION ELEMENT AND METHOD FOR MANUFACTURING SAME

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

MAGNETIC TUNNEL JUNCTION ELEMENT AND MAGNETIC MEMORY

SPINTRONICS ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY

SPIN ELECTRONICS ELEMENT AND METHOD OF MANUFACTURING THEREOF