Hiroaki Honjou

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Magnetic-domain-wall-displacement memory cell and initializing meth...
- Patent number 9,478,309
- Issue date Oct 25, 2016
- NEC Corporation
- Ryusuke Nebashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 9,406,869
- Issue date Aug 2, 2016
- NEC Corporation
- Hiroaki Honjou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetoresistive effect element, and magnetic random access memory
- Patent number 8,908,423
- Issue date Dec 9, 2014
- NEC Corporation
- Hiroaki Honjou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic random access memory and method of manufacturing the same
- Patent number 8,300,456
- Issue date Oct 30, 2012
- NEC Corporation
- Hiroaki Honjou
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect transducer having longitudinal bias layer a...
- Patent number 7,372,673
- Issue date May 13, 2008
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect transducer having longitudinal bias layer d...
- Patent number 6,950,290
- Issue date Sep 27, 2005
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element having a ferromagnetic tunnel junct...
- Patent number 6,798,626
- Issue date Sep 28, 2004
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic head with a tunnel junction including metallic material sa...
- Patent number 6,624,987
- Issue date Sep 23, 2003
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect transducer having longitudinal bias layer d...
- Patent number 6,542,342
- Issue date Apr 1, 2003
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Grant
MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WIT...
- Patent number 6,538,861
- Issue date Mar 25, 2003
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
MAGNETIC-DOMAIN-WALL-DISPLACEMENT MEMORY CELL AND INITIALIZING METH...
- Publication number 20150248939
- Publication date Sep 3, 2015
- NEC Corporation
- Ryusuke Nebashi
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
- Publication number 20150200354
- Publication date Jul 16, 2015
- TOHOKU UNIVERSITY
- Hiroaki Honjou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC MEMORY
- Publication number 20130075847
- Publication date Mar 28, 2013
- NEC Corporation
- Hiroaki Honjou
- B82 - NANO-TECHNOLOGY
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY
- Publication number 20120281463
- Publication date Nov 8, 2012
- NEC Corporation
- Hiroaki Honjou
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME
- Publication number 20100046288
- Publication date Feb 25, 2010
- Hiroaki Honjou
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive effect transducer having longitudinal bias layer d...
- Publication number 20050219772
- Publication date Oct 6, 2005
- NEC Corporation
- Kazuhiko Hayashi
- G01 - MEASURING TESTING
Information Patent Application
Magnetoresistive effect element, magneto-resistive effect head, met...
- Publication number 20030151859
- Publication date Aug 14, 2003
- NEC Corporation
- Kazuhiko Hayashi
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive effect transducer having longitudinal bias layer d...
- Publication number 20030035256
- Publication date Feb 20, 2003
- NEC Corporation
- Kazuhiko Hayashi
- B82 - NANO-TECHNOLOGY

Hiroaki Honjou

Person

Patents Grantslast 30 patents

Magnetic-domain-wall-displacement memory cell and initializing meth...

Semiconductor device

Magnetoresistive effect element, and magnetic random access memory

Magnetic random access memory and method of manufacturing the same

Magnetoresistive effect transducer having longitudinal bias layer a...

Magnetoresistive effect transducer having longitudinal bias layer d...

Magnetoresistive effect element having a ferromagnetic tunnel junct...

Magnetic head with a tunnel junction including metallic material sa...

Magnetoresistive effect transducer having longitudinal bias layer d...

MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WIT...

Patents Applicationslast 30 patents

MAGNETIC-DOMAIN-WALL-DISPLACEMENT MEMORY CELL AND INITIALIZING METH...

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

MAGNETIC MEMORY

MAGNETORESISTIVE EFFECT ELEMENT, AND MAGNETIC RANDOM ACCESS MEMORY

MAGNETIC RANDOM ACCESS MEMORY AND METHOD OF MANUFACTURING THE SAME

Magnetoresistive effect transducer having longitudinal bias layer d...

Magnetoresistive effect element, magneto-resistive effect head, met...

Magnetoresistive effect transducer having longitudinal bias layer d...